Semiconductor device and method for forming the same with doping regions having different conductivity types

1 . A semiconductor device, comprising:

a substrate having a first conductivity type;

an epitaxy layer disposed on the substrate and having the first conductivity type;

an electrode structure disposed in the epitaxy layer, wherein the electrode structure extends in a first direction;

a well region disposed on a side of the electrode structure and having the second conductivity type;

a contact doping region disposed in the well region,

a first sidewall doping region disposed on a side of the electrode structure and having the first conductivity type;

a second sidewall doping region disposed on another side of the electrode structure and having a second conductivity type different from the first conductivity type; and

a bottom doping region disposed under the electrode structure and having the second conductivity type, wherein the second sidewall doping region is connected to the bottom doping region and the second sidewall doping region extends from the well region to the bottom doping region,

wherein the first sidewall doping region is separated from the contact doping region by the well region,

wherein the second sidewall doping region penetrates through the well region and contacts the contact doping region.

2 . The semiconductor device as claimed in claim 1 , wherein the electrode structure comprises an insulation portion, a top electrode and a bottom electrode, wherein the top electrode and the bottom electrode are separated by the insulation portion.

3 . The semiconductor device as claimed in claim 2 , wherein the second sidewall doping region covers an entire sidewall of the bottom electrode.

4 . The semiconductor device as claimed in claim 1 , further comprising:

another electrode structure disposed beside the electrode structure in a second direction, wherein the another electrode structure is separated from the electrode structure by the epitaxy layer;

another first sidewall doping region disposed on a side of the another electrode structure and having the first conductivity type;

another second sidewall doping region disposed on another side of the another electrode structure and having the second conductivity type; and

another bottom doping region disposed under the another electrode structure and having the second conductivity type,

wherein the another second sidewall doping region is connected to the another bottom doping region,

wherein the first sidewall doping region of the electrode structure, the another second sidewall doping region of the another electrode structure, and the epitaxy layer disposed between the first sidewall doping region and the another second sidewall doping region are a superjunction.

5 . The semiconductor device as claimed in claim 1 , wherein the electrode structure is divided into a first region and a second region along the first direction in a top view, wherein the first sidewall doping region in the first region and the second sidewall doping region in the first region are defined as a sub first sidewall region and a sub second doping region respectively, wherein the semiconductor device further comprises:

a sub third sidewall doping region disposed on a side of the electrode structure in the second region; and

a sub fourth sidewall doping region disposed on another side of the electrode structure in the second region.

6 . The semiconductor device as claimed in claim 5 , wherein the sub third sidewall doping region and the sub fourth sidewall doping region have the first conductivity type and the second conductivity type, respectively, wherein the semiconductor device further comprises:

another bottom doping region disposed under the electrode structure in the second region and having the second conductivity type, wherein the sub fourth sidewall doping region is connected to the another bottom doping region.

7 . The semiconductor device as claimed in claim 6 , wherein the bottom doping region is connected to the another bottom doping region.

8 . The semiconductor device as claimed in claim 5 , wherein the sub third sidewall doping region and the sub fourth sidewall doping region have the first conductivity type, wherein in the second region, a bottom of the electrode structure is in direct contact with the epitaxy layer.

9 . The semiconductor device as claimed in claim 1 , wherein the contact doping region comprises a first contact doping region and a second contact doping region adjacent to each other, wherein the first contact doping region and the second contact doping region have the first conductivity type and the second conductivity type, respectively, wherein the second sidewall doping region contacts the second contact doping region.

10 . A method for forming the semiconductor device as set forth in claim 1 , comprising:

providing the substrate having the first conductivity type;

forming the epitaxy layer on the substrate, wherein the epitaxy layer has the first conductivity type;

forming a trench in the epitaxy layer along the first direction;

forming a doping region surrounding the trench, wherein forming the doping region comprises:

performing a first ion implantation and a second ion implantation on both sides of the trench in a way that is not perpendicular to the substrate to form the first sidewall doping region and the second sidewall doping region,

wherein the first sidewall doping region and the second sidewall doping region respectively have the first conductivity type and the second conductivity type; and

forming the electrode structure in the trench.

11 . The method as claimed in claim 10 , wherein performing the first ion implantation comprises not performing an ion implantation on a bottom of the trench.

12 . The method as claimed in claim 10 , further comprising:

performing a third ion implantation on a bottom of the trench to form a bottom doping region,

wherein the bottom doping region has the second conductivity type.

13 . The method as claimed in claim 12 , further comprising:

while forming the trench, forming another trench on a second direction of the trench in the epitaxy layer, wherein the second direction is perpendicular to the first direction;

while forming the doping region, forming another doping region surrounding the another trench, wherein the another doping region is separated from the doping region by the epitaxy layer; and

while forming the electrode structure, forming another electrode structure on the second direction of the electrode structure in the another trench.

14 . The method as claimed in claim 10 , wherein the trench is divided into a first region and a second region along the first direction, wherein the doping region is formed in the first region, wherein the method further comprises:

forming another doping region surrounding the trench in the second region.

15 . The method as claimed in claim 14 , wherein forming the another doping region in the second region comprises:

overfilling a photoresist in the trench in the first region;

performing a third ion implantation and a fourth ion implantation on both sides of the trench in the second region, respectively, to form a third sidewall doping region and a fourth sidewall doping region with different conductivity types;

removing the photoresist.

16 . The method as claimed in claim 15 , wherein forming the doping region further comprises:

before performing the first ion implantation and the second ion implantation, overfilling another photoresist in the trench in the second region; and

after performing the first ion implantation and the second ion implantation, removing the another photoresist.

17 . The method as claimed in claim 14 , wherein forming the doping region in the first region and forming the another doping region in the second region further comprises:

performing a third ion implantation on a bottom of the trench in the first region and the second region to form a bottom doping region, wherein the bottom doping region has the second conductivity type.

18 . The method as claimed in claim 14 , wherein forming the doping region in the first region and forming the another doping region in the second region comprises:

performing the first ion implantation on a sidewall of the trench in the first region and the second region to form the first sidewall doping region and a third sidewall doping region respectively in the first region and the second region;

overfilling a photoresist in the trench in the first region;

performing a third ion implantation on the other sidewall of the trench in the second region to form a fourth sidewall doping region in the second region;

removing the photoresist;

overfilling another photoresist in the trench in the second region;

performing the second ion implantation on the other sidewall of the trench in the first region to form the second sidewall doping region in the first region; and

removing the another photoresist.

19 . The method as claimed in claim 18 , wherein forming the doping region in the first region and forming the another doping region in the second region further comprises:

while the trench is overfilled with the photoresist in the second region, performing a fourth ion implantation on a bottom of the trench in the first region to form a bottom doping region, wherein the bottom doping region has the second conductivity type.