IP Library Granted Patent US 12684898
Granted Patent B2
US 12684898 · App. 17/697,410 · Granted Jul 14, 2026

Light-emitting element and light-emitting diode

Inventors: Jong Kyu Kim (Ansan-si, KR); So Ra Lee (Ansan-si, KR); Yeo Jin Yoon (Ansan-si, KR); Jae Kwon Kim (Ansan-si, KR); Joon Sup Lee (Ansan-si, KR); Min Woo Kang (Ansan-si, KR); Se Hee Oh (Ansan-si, KR); Hyun A. Kim (Ansan-si, KR); Hyoung Jin Lim (Ansan-si, KR)
Assignee: SEOUL VIOSYS CO., LTD.
H10H20/032H10H20/813H10H20/83H10H20/831H10H20/855H10H20/856H10H20/857H10H20/858H10H29/142H10W74/00H10W90/724H10W90/736
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Quick Facts
Patent No.
US 12684898
App. No.
17/697,410
Granted
Jul 14, 2026
Kind
B2
Abstract

A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

Claims (52)

1 . A light emitting device, comprising:

a first light emitting cell including a first semiconductor layer, a second semiconductor layer, and a first active region disposed between the first semiconductor layer and the second semiconductor layer of the first light emitting cell;

a second light emitting cell electrically connected to the first light emitting cell through a connection electrode and including a first semiconductor layer, a second semiconductor layer, and a second active region disposed between the first semiconductor layer and the second semiconductor layer of the second light emitting cell;

a third light emitting cell including a first electrode;

a fourth light emitting cell including a second electrode;

a first electrode pad and a second electrode pad that are electrically connected to the first light emitting cell and the second light emitting cell; and

a heat dissipation pad having a greater area than the first electrode pad and the second electrode pad and separated from the first electrode pad and the second electrode pad,

wherein the first electrode pad, the second electrode pad, and the heat dissipation pad include surfaces at a same level,

wherein the first light emitting cell and the second light emitting cell have different current densities resulting from an application of an electric current to the first light emitting cell and the second light emitting cell,

wherein the first light emitting cell and the second light emitting cell are disposed on and electrically isolated from the heat dissipation pad, and

wherein the electric current is applied to the first light emitting cell and the second light emitting cell through the first electrode and the second electrode.

2 . The light emitting device of claim 1 , wherein the first light emitting cell and the second light emitting cell have different planar shapes from each other.

3 . The light emitting device of claim 1 , further comprising:

a substrate on which the first light emitting cell and the second light emitting cell are disposed; and

a first insulation layer disposed on surfaces of the first light emitting cell and the second light emitting cell and covering a portion of the substrate.

4 . The light emitting device of claim 1 , wherein the first light emitting cell and the second light emitting cell are disposed to be coplanar with each other.

5 . The light emitting device of claim 1 , wherein the first light emitting cell and the second light emitting cell have different sizes from each other.

6 . The light emitting device of claim 1 , wherein the heat dissipation pad is disposed to cover the second light emitting cell and configured to transfer heat generated from the second light emitting cell to a substrate on which the second light emitting cell is disposed.

7 . A light emitting device, comprising:

a first light emitting cell including a first semiconductor layer, a second semiconductor layer, and a first active region disposed between the first semiconductor layer and the second semiconductor layer of the first light emitting cell;

a second light emitting cell electrically connected to the first light emitting cell through a connection electrode and including a first semiconductor layer, a second semiconductor layer, and a second active region disposed between the first semiconductor layer and the second semiconductor layer of the second light emitting cell;

a third light emitting cell including a first electrode;

a fourth light emitting cell including a second electrode;

a first electrode pad and a second electrode pad that are electrically connected to the first light emitting cell and the second light emitting cell; and

a heat dissipation pad having a greater area than the first electrode pad and the second electrode pad and separated from the first electrode pad and the second electrode pad,

wherein the first electrode pad, the second electrode pad, and the heat dissipation pad include surfaces at a same level,

wherein the second light emitting cell is disposed to be coplanar with the first light emitting cell, the first light emitting cell and the second light emitting cell have different shapes from each other,

wherein the first light emitting cell and the second light emitting cell are disposed on and electrically isolated from the heat dissipation pad,

wherein an electric current is applied to the first light emitting cell and the second light emitting cell through the first electrode and the second electrode.

8 . The light emitting device of claim 7 , wherein the first light emitting cell and the second light emitting cell have different current densities from each other resulting from an application of an electric current to the first light emitting cell and the second light emitting cell.

9 . The light emitting device of claim 7 , further comprising:

a substrate on which the first light emitting cell and the second light emitting cell are disposed; and

a first insulation layer disposed on surfaces of the first light emitting cell and the second light emitting cell and covering a portion of the substrate.

10 . The light emitting device of claim 7 , wherein the first light emitting cell and the second light emitting cell have different sizes from each other.

11 . The light emitting device of claim 7 , wherein the heat dissipation pad is disposed to cover the second light emitting cell and configured to transfer heat generated from the second light emitting cell to a substrate on which the second light emitting cell is disposed.

12 . A light emitting device, comprising:

a first light emitting cell including a first semiconductor layer and a second semiconductor layer and a first active region disposed between the first semiconductor layer and the second semiconductor layer of the first light emitting cell;

a second light emitting cell electrically connected to the first light emitting cell and including a first semiconductor layer, a second semiconductor layer, and a second active region disposed between the first semiconductor layer and the second semiconductor layer of the second light emitting cell;

a third light emitting cell including a first electrode;

a fourth light emitting cell including a second electrode;

an insulation layer disposed to cover sides of the first light emitting cell and the second light emitting cell;

a first electrode pad and a second electrode pad that are electrically connected to the first light emitting cell and the second light emitting cell; and

a heat dissipation pad having a greater area than the first electrode pad and the second electrode pad and separated from the first electrode pad and the second electrode pad,

wherein the first electrode pad, the second electrode pad, and the heat dissipation pad include surfaces at a same level,

wherein the first active region of the first light emitting cell has a different planar shape from the second active region of the second light emitting cell,

wherein the first light emitting cell and the second light emitting cell are disposed on and electrically isolated from the heat dissipation pad, and

wherein an electric current is applied to the first light emitting cell and the second light emitting cell through the first electrode and the second electrode.

13 . The light emitting device of claim 12 , wherein the first light emitting cell and the second light emitting cell have different current densities from each other resulting from an application of the electric current to the first light emitting cell and the second light emitting cell.

14 . The light emitting device of claim 12 ,

wherein the first light emitting cell, the third light emitting cell, and the fourth light emitting cell are disposed to surround at least a portion of the second light emitting cell.

15 . The light emitting device of claim 12 , wherein the first semiconductor layer, the second semiconductor layer, and the first active region of the first light emitting cell provide stacked structures such that two stacked adjacent structures are separated from each other by a certain distance.

16 . The light emitting device of claim 12 , wherein the heat dissipation pad is disposed to cover the second light emitting cell and configured to transfer heat generated from the second light emitting cell to a substrate on which the second light emitting cell is disposed.