Method for manufacturing nitride semiconductor light-emitting element
Manufacturing a nitride semiconductor light-emitting device includes a depositing an n-type cladding layer and an active layer with a multi-quantum well structure having a plurality of well layers on a substrate in a chamber. In depositing the active layer, a silicon source is not supplied into the chamber. The method includes supplying the silicon source into the chamber after depositing the n-type cladding layer and before depositing the active layer thereby, when a well layer located second from the n-type cladding layer side among the plurality of well layers is defined as a second well layer, a peak of distribution of a silicon concentration in a stacking direction of the n-type cladding layer and the active layer appears in a range where the second well layer is formed, and the silicon concentration at an apex of the peak is not less than 1.49×10 18 atoms/cm 3 and not more than 4.96×10 18 atoms/cm 3 .
1 . A method for manufacturing a nitride semiconductor light-emitting element, comprising:
depositing an n-type cladding layer and an active layer with a multi-quantum well structure comprising a plurality of well layers on a substrate in a chamber,
wherein a silicon source is not supplied into the chamber in the depositing the active layer, and
wherein the method further comprises supplying the silicon source into the chamber after depositing the n-type cladding layer and before depositing the active layer so that, when a well layer located second from the n-type cladding layer side among the plurality of well layers is defined as a second well layer, a peak of distribution of a silicon concentration in a stacking direction of the n-type cladding layer and the active layer appears in a range where the second well layer is formed, and the silicon concentration at an apex of the peak is not less than 1.49×10 18 atoms/cm 3 and not more than 4.96×10 18 atoms/cm 3 .
2 . The method according to claim 1 , wherein in the supplying the silicon source into the chamber after depositing the n-type cladding layer and before depositing the active layer, the silicon source is supplied into the chamber so that the silicon concentration at the apex of the peak is not less than 1.49×10 18 atoms/cm 3 and less than 3.00×10 18 atoms/cm 3 .
3 . The method according to claim 1 , wherein a growth temperature during when supplying the silicon source into the chamber after depositing the n-type cladding layer and before depositing the active layer is lower than a growth temperature of the n-type cladding layer and not less than a growth temperature of the active layer.
4 . The method according to claim 1 , wherein the supplying the silicon source into the chamber after depositing the n-type cladding layer and before depositing the active layer comprises supplying only the silicon source as a source gas into the chamber.
5 . The method according to claim 4 , wherein in the supplying only the silicon source, the silicon source is supplied into the chamber at a supply rate of not less than 0.10 μmol/min and not more than 0.40 μmol/min.
6 . The method according to claim 5 , wherein in the supplying only the silicon source, the silicon source is supplied into the chamber at a supply rate of not less than 0.15 μmol/min and not more than 0.40 μmol/min.