Light-emitting device, manufacturing method thereof and display apparatus

1 . A light-emitting device, comprising:

a substrate;

a light-emitting diode on the substrate;

a color conversion layer on a side of the light-emitting diode away from the substrate;

a plurality of grooves in a surface of the light-emitting diode away from the substrate; and

nano-metal particles filled in the plurality of grooves;

a metal layer on a side of the conversion layer away from the substrate and electrically connected to the light-emitting diode; and

a contact electrode electrically connected to the metal layer and for driving the light-emitting diode.

2 . The light-emitting device of claim 1 , wherein the nano-metal particles and the metal layer are made of a same material; and

a material of the nano-metal particles comprises: at least one of silver, gold, platinum, palladium or iridium.

3 . The light-emitting device of claim 1 , wherein a diameter of each nano-metal particle is less than or equal to 100 nanometers; and

a spacing value between any two adjacent nano-metal particles of the nano-metal particles is greater than or equal to 1 micrometer.

4 . The light-emitting device of claim 1 , wherein the light-emitting diode comprises: a first doped semiconductor layer and a second doped semiconductor layer opposite to each other and a quantum well layer between the first doped semiconductor layer and the second doped semiconductor layer; and

the plurality of grooves are in a surface of the second doped semiconductor layer away from the substrate; and

a depth of each groove is less than a thickness of the second doped semiconductor layer.

5 . The light-emitting device of claim 3 , wherein the light-emitting diode further comprises: a current spreading layer; and

the current spreading layer is on a side of the second doped semiconductor layer away from the substrate.

6 . The light-emitting device of claim 5 , wherein the color conversion layer comprises: a transparent conductive material layer and a quantum dot material layer;

the transparent conductive material layer is on a side of the current spreading layer away from the substrate, and a surface of the transparent conductive material layer away from the substrate has a line shape or a grid shape; and

the quantum dot material layer is on a side of the transparent conductive layer away from the substrate, or

the color conversion layer comprises: a mixture of the transparent conductive material and the quantum dot material.

7 . The light-emitting device of claim 6 , wherein the transparent conductive material comprises: at least one of graphene, carbon nanotubes and second nano-metal particles.

8 . The light-emitting device of claim 5 , wherein the color conversion layer comprises: a quantum dot material;

the light-emitting device further comprises a plurality of pores in a surface of the current spreading layer away from the substrate; and

the quantum dot material is filled in the plurality of pores.

9 . The light-emitting device of claim 8 , wherein a surface of each of the plurality of pores has charge potential opposite to charge potential of a surface of the quantum dot material.

10 . The light-emitting device of claim 8 , wherein the current spreading layer has a thickness in a range from 10 nanometers to 100 nanometers; and

each pore has a diameter in a range from 10 nanometers to 100 nanometers.

11 . The light-emitting device of claim 4 ,

wherein the connection electrode is a second connection electrode and the first doped semiconductor layer comprises a lapping stage;

the light-emitting device further comprises: a passivation layer covering the lapping stage and the metal layer, and a first connection electrode and the second connection electrode on a side of the passivation layer away from the substrate; the first connection electrode is electrically connected to the lapping stage through a via extending through the passivation layer; and

the second connection electrode is electrically connected to the metal layer through a via extending through the passivation layer.

12 . A display apparatus, comprising a plurality of light-emitting devices, each of which is the light-emitting device of claim 1 .

13 . A method for manufacturing a light-emitting device, comprising:

forming a light-emitting diode on a substrate;

forming a plurality of grooves in a surface of the light-emitting diode away from the substrate;

filling nano-metal particles in the plurality of grooves;

forming a color conversion layer on a side of the light-emitting diode away from the substrate

forming a metal layer covering the conversion layer and on a side of the conversion layer away from the substrate; and

forming a contact electrode electrically connected to the metal layer and for driving the light emitting-diode.

14 . The method of claim 13 , wherein

the forming the light-emitting diode on the substrate comprises:

sequentially forming a first doped semiconductor layer, a quantum well layer and a second doped semiconductor layer on the substrate.

15 . The method of claim 14 , wherein the filling the nano-metal particles in the plurality of grooves comprises:

forming a silicon oxide layer on a side of the second doped semiconductor layer away from the substrate;

forming a patterned photoresist layer on a side of the silicon oxide layer away from the substrate;

etching the silicon oxide layer and the second doped semiconductor layer by using the patterned photoresist layer as a mask, wherein the plurality of grooves are formed in a surface of the second doped semiconductor layer away from the substrate;

forming a nano-metal particle layer on the silicon oxide layer, and annealing the nano-metal particle layer to form the nano-metal particles, such that the nano-metal particles are filled in the plurality of grooves; and

stripping the silicon oxide layer by using an acid solution, such that redundant nano-metal particles are removed along with the stripping the silicon oxide layer.

16 . The method of claim 14 , wherein after the sequentially forming the first doped semiconductor layer, the quantum well layer and the second doped semiconductor layer on the substrate, the method further comprises:

forming a current spreading layer on a side of the second doped semiconductor layer away from the substrate.

17 . The method of claim 16 , wherein the forming the color conversion layer on the side of the light-emitting diode away from the substrate comprises:

forming a transparent conductive layer on a side of the current spreading layer away from the substrate by spin-coating, wherein a surface of the transparent conductive layer away from the substrate has a line shape or a grid shape; and

forming a quantum dot material layer on a side of the transparent conductive layer away from the substrate by spin-coating.

18 . The method of claim 16 , wherein the forming the color conversion layer on the side of the light-emitting diode away from the substrate comprises:

mixing a transparent conductive material and a quantum dot material to form a mixture, and forming the color conversion layer by spin-coating the mixture on a side of the current spreading layer away from the substrate; and

wherein after the mixing the transparent conductive material and the quantum dot material to form the mixture, the method further comprises:

performing an ultrasonic treatment on the mixture so that the transparent conductive material and the quantum dot material are dispersed.

19 . The method of claim 16 , wherein after the forming the current spreading layer on the side of the second doped semiconductor layer away from the substrate, the method further comprises:

performing a reductive etching reaction on the current spreading layer by using a zinc powder-ethanol solution, and forming a plurality of pores in a surface of the current spreading layer away from the substrate, or

imprinting a photoresist layer by using a nano-imprinting template to form a patterned photoresist layer; and etching the current spreading layer by using the patterned photoresist layer as a mask, and forming a plurality of pores in a surface of the current spreading layer away from the substrate.

20 . The method of claim 19 , wherein the forming the color conversion layer on the side of the light-emitting diode away from the substrate comprises:

processing the surface of the current spreading layer away from the substrate to change a potential of the surface;

processing a solution of a quantum dot material, such that a potential of the quantum dot material is opposite to the potential of the surface of the current spreading layer away from the substrate; and

spin-coating the solution of the quantum dot material on the surface of the current spreading layer away from the substrate, such that the quantum dot material is filled in the plurality of pores.