Light-emitting diode and light-emitting device including the same

1 . A light-emitting diode comprising:

an epitaxial structure including a first semiconductor layer, a light-emitting layer disposed on said first semiconductor layer, and a second semiconductor layer disposed on said light-emitting layer;

at least one via hole extending downwardly from a portion of an upper surface of said second semiconductor layer and through said light-emitting layer to terminate at said first semiconductor layer;

a first insulation layer including a first insulation portion and a second insulation portion, said first insulation portion being disposed over a portion of said second semiconductor layer and extending to a bottom of said at least one via hole, said first insulation portion being formed with at least one first opening disposed at said bottom of said at least one via hole, said second insulation portion being disposed only over a portion of said second semiconductor layer, said first insulation portion being disposed to surround said second insulation portion, said first insulation portion and said second insulation portion being separated from each other by a second opening formed as a shape surrounding said second insulation portion;

a first connecting electrode disposed on said first insulation portion and electrically connected to said first semiconductor layer through said at least one first opening;

a second connecting electrode covering an upper surface and a sidewall of said second insulation portion and electrically connected to said second semiconductor layer through said second opening, an upper surface of said second connecting electrode being on the same level as that of said first connecting electrode;

a second insulation layer disposed on said first connecting electrode and said second connecting electrode, and provided with a third opening and a fourth opening;

a first pad disposed on said first connecting electrode, and electrically connected to said first connecting electrode through said third opening; and

a second pad disposed on said second connecting electrode, and electrically connected to said second connecting electrode through said fourth opening;

a reflective layer provided over said second semiconductor layer; and

a blocking layer covering said reflective layer,

wherein vertical projection of said at least one via hole on an upper surface of said first semiconductor layer does not overlap vertical projection of each of said first pad and said second pad on said upper surface of said first semiconductor layer, and

wherein said first insulation portion and said second insulation portion cover said blocking layer, said second opening exposes a portion of said blocking layer, and said second connecting electrode is electrically connected to said blocking layer through said second opening.

2 . The light-emitting diode according to claim 1 , wherein said first insulation portion has a thickness ranging from 0.8 μm to 1.5 μm.

3 . The light-emitting diode according to claim 1 , wherein said second insulation portion does not overlap said at least one via hole.

4 . The light-emitting diode according to claim 1 , wherein a horizontally projected area of said second insulation portion is at least 50% of that of said second connecting electrode, and is less than 100% of that of said second connecting electrode.

5 . The light-emitting diode according to claim 1 , wherein a horizontally projected area of said second insulation portion is 30% to 70% of that of said first insulation portion.

6 . The light-emitting diode according to claim 1 , wherein a proportion of a horizontally projected area of said second pad to that of said second connecting electrode is less than 100%.

7 . The light-emitting diode according to claim 6 , wherein a second distance is defined between an edge of said second connecting electrode and an edge of said second pad, and ranges from 15 μm to 50 μm.

8 . The light-emitting diode according to claim 1 , wherein a proportion of a horizontally projected area of said third opening to that of said first pad is greater than 100% and up to 110%.

9 . The light-emitting diode according to claim 1 , wherein a first distance is defined between said first insulation portion and said second insulation portion and ranges from 5 μm to 20 μm.

10 . The light-emitting diode according to claim 1 , wherein a third distance is defined between said first connecting electrode and said second connecting electrode, and ranges from 10 μm to 50 μm.

11 . The light-emitting diode according to claim 1 , wherein a proportion of a horizontally projected area of said reflective layer to that of said second semiconductor layer is at least 80%.

12 . The light-emitting diode according to claim 1 , wherein said second insulation portion includes a plurality of protrusion parts extending horizontally toward said first pad, at least one of said via holes being provided between two adjacent ones of said protrusion parts.

13 . The light-emitting diode according to claim 1 , wherein said second connecting electrode is configured as a shape the same as that of said second insulation portion.

14 . The light-emitting diode according to claim 1 , wherein said second pad covers said second insulation layer, and a fourth distance is defined between an edge of said second pad and an edge of said fourth opening, said fourth distance being ranges from 5 μm to 20 μm.

15 . The light-emitting diode according to claim 1 , further comprising an extended electrode, which is formed by extending said first connecting electrode.

16 . The light-emitting diode according to claim 1 , wherein said second connecting electrode entirely covers said second insulation portion.

17 . A light-emitting device comprising the light-emitting diode according to claim 1 .