Display device and method for manufacturing same

1 . A display device comprising:

a display panel comprising:

a transparent substrate;

an inorganic light emitting element provided on the transparent substrate and configured to emit a light toward the transparent substrate, the inorganic light emitting element comprising a light emitting surface facing the transparent substrate and a first electrode on a surface of the inorganic light emitting element that is opposite to the light emitting surface;

a first insulating layer provided on the inorganic light emitting element;

a thin film transistor provided on the first insulating layer, the thin film transistor comprising a gate electrode, a source electrode, and a drain electrode;

a second insulating layer between the gate electrode, the source electrode, and the drain electrode;

a third insulating layer provided on the second insulating layer; and

an electrode pad directly contacting a portion of the first electrode by a contact hole penetrating the third insulating layer, the portion of the first electrode being directly above the inorganic light emitting element; and

a driver integrated circuit (IC) configured to drive the display panel and connected to the electrode pad,

wherein at least a portion of the thin film transistor overlaps at least a portion of the inorganic light emitting element.

2 . The display device of claim 1 , further comprising a first buffer layer between the transparent substrate and the inorganic light emitting element, the first buffer layer comprising an adhesive material.

3 . The display device of claim 2 , wherein the inorganic light emitting element comprises:

a second electrode facing the first insulating layer in a direction opposite to a light emitting direction of the light emitting surface.

4 . The display device of claim 3 , wherein the driver IC is provided on the display panel in the direction opposite to the light emitting surface.

5 . The display device of claim 1 , wherein the portion of the thin film transistor overlaps the portion of the inorganic light emitting element on a plane on which the transparent substrate is provided.

6 . The display device of claim 1 , wherein the display panel further comprises a plurality of pixels arranged in two dimensions, and

wherein each of the plurality of pixels comprises at least three sub-pixels, and each of the at least three sub-pixels is configured to emit light of a color different from colors of light emitted from others of the at least three sub-pixels.

7 . The display device of claim 6 , wherein the at least three sub-pixels comprise a red sub-pixel, a green sub-pixel, and a blue sub-pixel,

wherein the red sub-pixel among the at least three sub-pixels comprises a red inorganic light emitting element configured to emit red light;

wherein the green sub-pixel among the at least three sub-pixels comprises a green inorganic light emitting element configured to emit green light; and

wherein the blue sub-pixel among the at least three sub-pixels comprises a blue inorganic light emitting element configured to emit blue light.

8 . The display device of claim 6 , wherein each of the at least three sub-pixels comprises an inorganic light emitting element emitting light of a same color, and

wherein the display device further comprises a color conversion layer between the transparent substrate and the inorganic light emitting element.

9 . The display device of claim 1 , wherein the thin film transistor comprises a low temperature polycrystalline silicon (LTPS) thin film transistor, and

wherein the second insulating layer comprises an inter-layer dielectric (ILD).

10 . The display device of claim 1 , wherein the contact hole penetrates the third insulating layer.

11 . A manufacturing method for a display device, the method comprising:

transferring an inorganic light emitting element onto a transparent substrate, the inorganic light emitting element comprising a light emitting surface facing the transparent substrate and a first electrode on a surface of the inorganic light emitting element that is opposite to the light emitting surface;

forming a first insulating layer on the inorganic light emitting element;

forming a thin film transistor on the first insulating layer so that at least a portion of the thin film transistor overlaps at least a portion of the inorganic light emitting element, the thin film transistor being connected with the inorganic light emitting element by a first contact hole penetrating through the first insulating layer, the thin film transistor comprising a gate electrode, a source electrode, and a drain electrode;

forming a second insulating layer between the gate electrode, the source electrode, and the drain electrode;

forming a third insulating layer provided on the second insulating layer; and

forming an electrode pad, the electrode pad being connected with the inorganic light emitting element by directly contacting a portion of the first electrode by a second contact hole penetrating the first insulating layer, and the portion of the first electrode being directly above the inorganic light emitting element.

12 . The manufacturing method of claim 11 , wherein the transferring the inorganic light emitting element onto the transparent substrate comprises forming a first buffer layer comprising an adhesive material on the transparent substrate so that the inorganic light emitting element is transferred onto the transparent substrate on which the first buffer layer is formed.

13 . The manufacturing method of claim 11 , wherein the transferring the inorganic light emitting element onto the transparent substrate comprises transferring the inorganic light emitting element so that the light emitting surface of the inorganic light emitting element faces the transparent substrate and the first electrode of the inorganic light emitting element faces the first insulating layer.