Method for manufacturing image display device and image display device
A method for manufacturing an image display device according to an embodiment includes forming a graphene layer on a first substrate, forming a semiconductor layer including a light-emitting layer on the graphene layer, forming the light-emitting element by patterning the semiconductor layer so that the light-emitting element includes a bottom surface on the graphene layer and a light-emitting surface at a side opposite to the bottom surface, forming a first insulating film that covers the first substrate, the graphene layer, and the light-emitting element, forming a circuit element on the first insulating film, forming a second insulating film that covers the first insulating film and the circuit element, exposing the light-emitting surface by removing a portion of the first insulating film and a portion of the second insulating film, forming a via extending through the first and second insulating films, and forming a wiring layer on the second insulating film.
1 . A method for manufacturing an image display device, the method comprising:
forming a graphene-including layer on a first substrate;
forming a semiconductor layer on the graphene-including layer, the semiconductor layer comprising a light-emitting layer;
forming a light-emitting element by patterning the semiconductor layer, the light-emitting element comprising:
a bottom surface on the graphene-including layer, and
a light-emitting surface at a side opposite to the bottom surface;
forming a first insulating film that covers the first substrate, the graphene-including layer, and the light-emitting element;
forming a circuit element on the first insulating film;
forming a second insulating film that covers the first insulating film and the circuit element,
exposing a surface that includes the light-emitting surface by removing a portion of the first insulating film and a portion of the second insulating film;
forming a via that extends through the first and second insulating films; and
forming a wiring layer on the second insulating film; wherein:
the light-emitting element comprises a connection part formed on the graphene-including layer; and
the via is located between the wiring layer and the connection part and electrically connects the wiring layer and the connection part.
2 . The method for manufacturing the image display device according to claim 1 , wherein:
in the step of forming the semiconductor layer, the semiconductor layer is formed by sputtering.
3 . The method for manufacturing the image display device according to claim 1 , further comprising:
before the step of forming the graphene-including layer, forming a first part on the first substrate, the first part being light-reflective, wherein:
in a plan view, an outer perimeter of the light-emitting element is located within an outer perimeter of the first part.
4 . The method for manufacturing the image display device according to claim 1 , wherein:
the first substrate comprises a light-transmitting substrate.
5 . The method for manufacturing the image display device according to claim 4 , wherein:
the first substrate further comprises a second substrate located on the light-transmitting substrate, the second substrate being flexible, and
the method further comprises, after the step of forming the wiring layer, removing the light-transmitting substrate.
6 . The method for manufacturing the image display device according to claim 5 , further comprising:
before the step of forming the graphene-including layer, forming a layer including a silicon compound on the second substrate.
7 . The method for manufacturing the image display device according to claim 1 , further comprising:
forming a light-transmitting electrode on the light-emitting surface.
8 . The method for manufacturing the image display device according to claim 1 , wherein:
the semiconductor layer comprises a gallium nitride compound semiconductor.
9 . The method for manufacturing the image display device according to claim 1 , further comprising:
forming a wavelength conversion member on the light-emitting element.