Light-emitting element, light-emitting device, light-emitting device production method, and electronic device
A light-emitting element includes a light-emitting layer provided between a first electrode and a second electrode and including quantum dots, and an interposition film interposed between the first electrode and the light-emitting layer, and the interposition film includes a halogen simple substance including first halogen atoms.
1 . A light-emitting element comprising:
a first electrode;
a second electrode;
a light-emitting layer provided between the first electrode and the second electrode, and including quantum dots; and
an interposition film interposed between the first electrode and the light-emitting layer,
wherein the interposition film includes first metal atoms, and a halogen simple substance including first halogen atoms, and
the light-emitting layer further includes second halogen atoms of a same element as the first halogen atoms.
2 . The light-emitting element according to claim 1 , wherein the second halogen atoms are derived from the first halogen atoms.
3 . The light-emitting element according to claim 1 , wherein a maximum value of an atomic number density of the second halogen atoms in the light-emitting layer is 2 at % or more and 50 at % or less in a layer thickness direction of the light-emitting layer.
4 . The light-emitting element according to claim 1 ,
wherein the light-emitting layer and the interposition film are at least partially in contact with each other.
5 . The light-emitting element according to claim 1 , wherein the first halogen atoms and the second halogen atoms are iodine atoms.
6 . The light-emitting element according to claim 1 , wherein the quantum dots include second metal atoms, and the second metal atoms are any one or more of Cd, In, Zn, Pb, Cs, Rb, and Sn.
7 . A light-emitting device comprising:
the light-emitting element according to claim 1 ; and
a substrate,
wherein the second electrode is disposed between the substrate and the light-emitting layer.
8 . An electronic device comprising the light-emitting element according to claim 1 .
9 . The light-emitting element according to claim 1 , wherein the first metal atoms are copper.
10 . The light-emitting element according to claim 1 , wherein the interposition film includes copper iodide.
11 . The light-emitting element according to claim 1 ,
wherein the light-emitting layer includes a first region, from a center of the light-emitting layer to an end on a first electrode side in a layer thickness direction, and a second region, from the center of the light-emitting layer to an end on a second electrode side in the layer thickness direction, and
an average value of an atomic number density of the second halogen atoms in the first region is larger than an average value of an atomic number density of the second halogen atoms in the second region.
12 . The light-emitting element according to claim 11 , wherein the atomic number density of the second halogen atoms in the first region is 2 at % or more and 10 at % or less.
13 . The light-emitting element according to claim 1 ,
wherein an atomic number density of the second halogen atoms in the light-emitting layer decreases gradually, from a position at which the atomic number density of the second halogen atoms is maximum, toward a second electrode side in a layer thickness direction of the light-emitting layer.
14 . The light-emitting element according to claim 13 , wherein the position at which the atomic number density of the second halogen atoms in the light-emitting layer is maximum is located in a region from an end of the light-emitting layer on a first electrode side to a depth equivalent to a maximum size of one quantum dot.
15 . The light-emitting element according to claim 13 , wherein the position at which the atomic number density of the second halogen atoms in the light-emitting layer is maximum is an end of the light-emitting layer on a first electrode side.
16 . The light-emitting element according to claim 1 , further comprising:
a second interposition film interposed between the first electrode and the interposition film,
wherein the second interposition film includes first metal atoms and third halogen atoms of the same element as the first halogen atoms.
17 . The light-emitting element according to claim 16 , wherein the second interposition film includes iodine atoms, and an atomic number density of the iodine atoms is 75 at % or more.
18 . A light-emitting device comprising:
the light-emitting element according to claim 16 ; and
a substrate,
wherein the second electrode is disposed between the substrate and the light-emitting layer.