IP Library Granted Patent US 12684936
Granted Patent B2
US 12684936 · App. 18/102,169 · Granted Jul 14, 2026

Light-emitting device and electronic apparatus including the same

Inventors: Jongwon Lee (Yongin-si, KR); Seungcheol Kim (Yongin-si, KR); Changmin Lee (Yongin-si, KR); Hyunshik Lee (Yongin-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H10K50/131H10K50/19H10K50/15H10K59/12H10K2101/90H10K2102/351
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Quick Facts
Patent No.
US 12684936
App. No.
18/102,169
Granted
Jul 14, 2026
Kind
B2
Abstract

Embodiments provide a light-emitting device and an electronic apparatus including the same. The light-emitting device includes a first electrode, a second electrode facing the first electrode, m light-emitting units stacked between the first electrode and the second electrode, and m−1 charge generation layers between adjacent ones of the light-emitting. Each light-emitting unit includes an emission layer; the m light-emitting units include a first light-emitting unit, a second light-emitting unit, a third light-emitting unit, a fourth light-emitting unit, and a fifth light-emitting unit; the m−1 charge generation layers include a first charge generation layer, a second charge generation layer, a third charge generation layer, and a fourth charge generation layer; the first light-emitting unit and the second light-emitting unit each emit green light; and the third light-emitting unit, the fourth light-emitting unit, and the fifth light-emitting unit each emit blue light.

Claims (57)

1 . A light-emitting device comprising:

a first electrode;

a second electrode facing the first electrode;

m light-emitting units stacked between the first electrode and the second electrode; and

m−1 charge generation layers between adjacent ones of the m light-emitting units, wherein

m is an integer of 5 or more,

each light-emitting unit comprises an emission layer,

the m light-emitting units comprise a first light-emitting unit, a second light-emitting unit, a third light-emitting unit, a fourth light-emitting unit, and a fifth light-emitting unit,

the m−1 charge generation layers comprise a first charge generation layer, a second charge generation layer, a third charge generation layer, and a fourth charge generation layer,

the first light-emitting unit and the second light-emitting unit each emit green light, the third light-emitting unit, the fourth light-emitting unit, and the fifth light-emitting unit each emit blue light, and wherein the first light-emitting unit and the second light-emitting unit are not adjacent to each other.

2 . The light-emitting device of claim 1 , wherein m is 5.

3 . The light-emitting device of claim 1 , wherein the emission layers of the first light-emitting unit and the second light-emitting unit each emit light having a maximum emission wavelength in a range of about 500 nm to about 600 nm.

4 . The light-emitting device of claim 1 , wherein the emission layers of the third light-emitting unit, the fourth light-emitting unit, and the fifth light-emitting unit each emit light having a maximum emission wavelength in a range of about 400 nm to about 500 nm.

5 . The light-emitting device of claim 1 , wherein

the first light-emitting unit is a light-emitting unit that is most toward the first electrode; or

the second light-emitting unit is a light-emitting unit that is most toward the second electrode.

6 . The light-emitting device of claim 1 , wherein the first light-emitting unit or the second light-emitting unit is between the third light-emitting unit and the fifth light-emitting unit.

7 . The light-emitting device of claim 2 , wherein

the first charge generation layer is between the third light-emitting unit and the fourth light-emitting unit,

the second charge generation layer is between the fourth light-emitting unit and the first light-emitting unit,

the third charge generation layer is between the first light-emitting unit and the fifth light-emitting unit, and

the fourth charge generation layer is between the fifth light-emitting unit and the second light-emitting unit.

8 . The light-emitting device of claim 2 , wherein

the first charge generation layer is between the first light-emitting unit and the third light-emitting unit,

the second charge generation layer is between the third light-emitting unit and the fourth light-emitting unit,

the third charge generation layer is between the fourth light-emitting unit and the second light-emitting unit, and

the fourth charge generation layer is between the second light-emitting unit and the fifth light-emitting unit.

9 . The light-emitting device of claim 2 , wherein

the first charge generation layer is between the first light-emitting unit and the third light-emitting unit,

the second charge generation layer is between the third light-emitting unit and the second light-emitting unit,

the third charge generation layer is between the second light-emitting unit and the fourth light-emitting unit, and

the fourth charge generation layer is between the fourth light-emitting unit and the fifth light-emitting unit.

10 . The light-emitting device of claim 1 , wherein Formula 1 is satisfied:

3800 Å≤ D 1 ≤4500 Å  (1)

wherein in Formula 1,

D 1 represents a distance between an interface between the first electrode and a light-emitting unit that is most toward the first electrode, and an interface between the second electrode and a light-emitting unit that is most toward the second electrode.

11 . The light-emitting device of claim 1 , wherein Formula 2-1 is satisfied:

3≤ D 1 /(2*λ 1 )≤4  (2-1)

wherein in Formula 2-1,

D 1 represents a distance between an interface between the first electrode and a light-emitting unit that is most toward the first electrode, and an interface between the second electrode and a light-emitting unit that is most toward the second electrode, and

λ 1 represents a maximum emission wavelength of the first light-emitting unit.

12 . The light-emitting device of claim 1 , wherein Formula 2-2 is satisfied:

4≤ D 1 /(2*λ 3 )≤5  (2-2)

wherein in Formula 2-2,

D 1 represents a distance between an interface between the first electrode and a light-emitting unit that is most toward the first electrode, and an interface between the second electrode and a light-emitting unit that is most toward the second electrode, and

λ 3 represents a maximum emission wavelength of the third light-emitting unit.

13 . The light-emitting device of claim 1 , wherein at least one of the m−1 charge generation layers comprises an n-type charge generation layer and a p-type charge generation layer.

14 . The light-emitting device of claim 1 , wherein

at least one emission layer comprises a first host and a second host, and

the first host and the second host are different from each other.

15 . The light-emitting device of claim 1 , wherein at least one emission layer comprises a first emission layer and a second emission layer.

16 . The light-emitting device of claim 1 , further comprising a capping layer arranged outside the second electrode.

17 . An electronic apparatus comprising the light-emitting device of claim 1 .

18 . The electronic apparatus of claim 17 , further comprising a thin-film transistor, wherein

the thin-film transistor comprises a source electrode and a drain electrode, and

the first electrode of the light-emitting device is electrically connected to at least one of the source electrode and the drain electrode.

19 . The electronic apparatus of claim 17 , further comprising a color filter, a color conversion layer, a quantum dot color conversion layer, a touch screen layer, a polarizing layer, or a combination thereof.