Light-emitting transistor and display substrate

1 . A light-emitting transistor, comprising:

a substrate;

a gate on the substrate;

an insulating layer on a side, facing away from the substrate, of the gate;

an active layer on a side, facing away from the gate, of the insulating layer;

first electrodes on a side, facing away from the insulating layer, of the active layer, wherein the first electrodes have set patterns;

a quantum dot light-emitting layer on a side, facing away from the active layer, of the first electrodes; wherein the quantum dot light-emitting layer is filled between the set patterns of the first electrodes and comes into contact with the active layer; wherein the quantum dot light-emitting layer covers a surface and a side surface, facing away from the active layer, of the set pattern of the first electrode; and the quantum dot light-emitting layer covers a surface of the active layer not covered by the first electrodes; and

a second electrode on a side, facing away from the first electrode, of the quantum dot light-emitting layer.

2 . The light-emitting transistor according to claim 1 , wherein the set patterns of the first electrodes are comb patterns or grid patterns.

3 . The light-emitting transistor according to claim 1 , wherein the second electrode is arranged on an entire surface; and

an orthographic projection of the second electrode on the substrate completely covers orthographic projections of the first electrodes on the substrate.

4 . The light-emitting transistor according to claim 1 , further comprising an electron transport layer;

wherein the active layer comprises an N-type semiconductor material, and the electron transport layer and the active layer have an integral structure;

wherein the light-emitting transistor further comprises at least one of a hole injection layer or a hole transport layer between the quantum dot light-emitting layer and the second electrode.

5 . The light-emitting transistor according to claim 1 , further comprising a hole transport layer;

wherein the active layer comprises a P-type semiconductor material, and the hole transport layer and the active layer have an integral structure.

6 . The light-emitting transistor according to claim 5 , further comprising at least one of an electron injection layer or an electron transport layer between the quantum dot light-emitting layer and the second electrode.

7 . A display substrate, comprising a plurality of pixel circuits, wherein each of the plurality of pixel circuits comprises:

a switch transistor, wherein a gate of the switch transistor is coupled to a scanning signal end, and a first electrode of the switch transistor is coupled to a data signal end;

the light-emitting transistor according to claim 1 , wherein the gate of the light-emitting transistor is coupled to a second electrode of the switch transistor, the first electrode of the light-emitting transistor is coupled to a first power source signal end, and the second electrode of the light-emitting transistor is coupled to a second power source signal end; and

a capacitor, wherein the capacitor is coupled between the first electrode and the gate of the light-emitting transistor.

8 . The display substrate according to claim 7 , wherein the first power source signal end is grounded.

9 . The display substrate according to claim 8 , wherein the active layer of the light-emitting transistor comprises an N-type semiconductor material, and the second power source signal end is configured to load a positive voltage signal.

10 . The display substrate according to claim 8 , wherein the active layer of the light-emitting transistor comprises a P-type semiconductor material, and the second power source signal end is configured to load a negative voltage signal.

11 . A display substrate, comprising a plurality of pixel circuits, wherein each of the plurality of pixel circuits comprises:

a switch transistor, wherein a gate of the switch transistor is coupled to a scanning signal end, and a first electrode of the switch transistor is coupled to a data signal end;

a light-emitting transistor comprising a gate, an insulating layer, first electrodes, an active layer, a quantum dot light-emitting layer and a second electrode that are sequentially stacked; wherein the first electrodes have set patterns, and the active layer is filled between the set patterns of the first electrodes and comes into contact with the insulating layer; wherein the active layer covers a surface and a side surface, facing away from the insulating layer, of the set pattern of the first electrode; the active layer covers a surface of the insulating layer not covered by the first electrodes; and the gate of the light-emitting transistor is coupled to a second electrode of the switch transistor, the first electrode of the light-emitting transistor is coupled to a first power source signal end, and the second electrode of the light-emitting transistor is coupled to a second power source signal end; and

a capacitor, wherein the capacitor is coupled between the first electrode and the gate of the light-emitting transistor.

12 . The display substrate according to claim 11 , wherein the set pattern of the first electrode of the light-emitting transistor is a comb pattern or a grid pattern.

13 . The display substrate according to claim 11 , wherein the second electrode of the light-emitting transistor is arranged on an entire surface; and

an orthographic projection of the second electrode of the light-emitting transistor on the substrate completely covers orthographic projections of the first electrodes of the light-emitting transistor on the substrate.

14 . The display substrate according to claim 11 , wherein the gate of the switch transistor, the gate of the light-emitting transistor, and a first electrode of the capacitor are arranged on a same layer;

the first electrode and the second electrode of the switch transistor, the first electrodes of the light-emitting transistor and a second electrode of the capacitor are arranged on a same layer; and

the second electrode of the light-emitting transistor is electrically connected to the second electrode of the capacitor.

15 . The display substrate according to claim 11 , wherein the light-emitting transistor further comprises an electron transport layer;

the active layer of the light-emitting transistor comprises an N-type semiconductor material; and

the electron transport layer and the active layer of the light-emitting transistor have an integral structure.

16 . The display substrate according to claim 15 , wherein the first power source signal end is grounded, and the second power source signal end is configured to load a positive voltage signal.

17 . The display substrate according to claim 15 , wherein the light-emitting transistor further comprises at least one of a hole injection layer or a hole transport layer between the quantum dot light-emitting layer and the second electrode of the light-emitting transistor.

18 . The display substrate according to claim 11 , wherein the light-emitting transistor further comprises a hole transport layer;

the active layer of the light-emitting transistor comprises a P-type semiconductor material; and

the hole transport layer and the active layer of the light-emitting transistor have an integral structure.

19 . The display substrate according to claim 18 , wherein the first power source signal end is grounded, and the second power source signal end is configured to load a negative voltage signal.

20 . The display substrate according to claim 18 , wherein the light-emitting transistor further comprises at least one of an electron injection layer or an electron transport layer between the quantum dot light-emitting layer and the second electrode of the light-emitting transistor.