Buffer layers, interlayers, and barrier layers comprising Heusler alloys for SOT based sensor, memory, and storage devices
The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a nonmagnetic buffer layer, a nonmagnetic interlayer, a ferromagnetic layer, and a nonmagnetic barrier layer. One or more of the barrier layer, interlayer, and buffer layer comprise a polycrystalline non-Heusler alloy material, or a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In. The Heusler alloy is a full Heusler alloy comprising X 2 YZ or a half Heusler alloy comprising XYZ, where X is one of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is one of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is one of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.
1 . A spin-orbit torque (SOT) device, comprising:
a first nonmagnetic layer comprising:
(a) a polycrystalline non-Heusler alloy material, or
(b) a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In, wherein the SOT device further comprises:
a bismuth antimony (BiSb) layer disposed in contact with the first nonmagnetic layer;
a second nonmagnetic layer comprising a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In; and
a ferromagnetic layer disposed in contact with the second nonmagnetic layer.
2 . The SOT device of claim 1 , further comprising a third nonmagnetic layer comprising a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In.
3 . The SOT device of claim 2 , wherein the third nonmagnetic layer is disposed in contact with the BiSb layer.
4 . The SOT device of claim 2 , wherein the first nonmagnetic layer is a buffer layer and wherein the third nonmagnetic layer is an interlayer.
5 . The SOT device of claim 4 , wherein the interlayer has a thickness less than or equal to about 20 Å, and wherein the buffer layer has a thickness between about 5 Å to about 200 Å.
6 . The SOT device of claim 1 , wherein the first nonmagnetic layer is further disposed in contact with the ferromagnetic layer.
7 . The SOT device of claim 1 , wherein the Heusler alloy is a full Heusler alloy comprising X 2 YZ, where X is selected from the group consisting of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is selected from the group consisting of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is selected from the group consisting of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.
8 . The SOT device of claim 1 , wherein the Heusler alloy is a half Heusler alloy comprising XYZ, where X is selected from the group consisting of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is selected from the group consisting of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is selected from the group consisting of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.
9 . The SOT device of claim 1 , wherein the polycrystalline non-Heusler alloy material is selected from the group consisting of:
NiAl, RuAl, RhAl, Mn 3 Al, V, Mo, W, TiW, CrX, where x=Ti, Ru, Mo, or W;
CrMo, CrMoTi, Cr, MoV, CrMoW, where Mo is between about 20% atomic percent to about 50% atomic percent;
V 2 VAl; and
CrXY, where X and Y are each individually selected from the group consisting of: Al, Ti, Mn, Co, Ni, Ru, Mo, Rh, W, and V.
10 . A magnetic recording head comprising the SOT device of claim 1 .
11 . A magnetic recording device comprising the magnetic recording head of claim 10 .
12 . A magneto-resistive memory comprising the SOT device of claim 1 .
13 . A magnetic sensor comprising the SOT device of claim 1 .
14 . A spin-orbit torque (SOT) device, comprising:
a texture layer;
a nonmagnetic buffer layer disposed on the texture layer;
a bismuth antimony (BiSb) layer over the nonmagnetic buffer layer;
a nonmagnetic interlayer disposed on the BiSb layer;
a ferromagnetic layer disposed on the nonmagnetic interlayer; and
a nonmagnetic barrier layer disposed on the ferromagnetic layer,
wherein each of the nonmagnetic barrier layer, the nonmagnetic interlayer, and the nonmagnetic buffer layer comprise a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In.
15 . The SOT device of claim 14 , further comprising a nucleation layer disposed between the nonmagnetic buffer layer and the BiSb layer, the nucleation layer comprising a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In.
16 . The SOT device of claim 14 , wherein the Heusler alloy is a full Heusler alloy comprising X 2 YZ, where X is selected from the group consisting of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is selected from the group consisting of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is selected from the group consisting of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.
17 . The SOT device of claim 14 , wherein the Heusler alloy is a half Heusler alloy comprising XYZ, where X is selected from the group consisting of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is selected from the group consisting of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is selected from the group consisting of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.
18 . The SOT device of claim 14 , further comprising:
an amorphous seed layer disposed in contact with the texture layer; and
a cap layer disposed on the nonmagnetic barrier layer.
19 . A magnetic recording head comprising the SOT device of claim 14 .
20 . A magnetic recording device comprising the magnetic recording head of claim 19 .
21 . A magneto-resistive memory comprising the SOT device of claim 14 .
22 . A magnetic sensor comprising the SOT device of claim 14 .
23 . A spin-orbit torque (SOT) device, comprising:
a seed layer;
a texture layer disposed on the seed layer;
a ferromagnetic layer disposed on the texture layer;
a nonmagnetic buffer layer disposed on the ferromagnetic layer;
a nonmagnetic nucleation layer disposed on the nonmagnetic buffer layer;
a bismuth antimony (BiSb) layer on the nonmagnetic nucleation layer; and
a nonmagnetic interlayer disposed on the BiSb layer,
wherein each of the nonmagnetic interlayer, nonmagnetic nucleation layer, and the nonmagnetic buffer layer comprise a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In.
24 . The SOT device of claim 23 , wherein the Heusler alloy is a full Heusler alloy comprising X 2 YZ, where X is selected from the group consisting of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is selected from the group consisting of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is selected from the group consisting of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.
25 . The SOT device of claim 23 , wherein the Heusler alloy is a half Heusler alloy comprising XYZ, where X is selected from the group consisting of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is selected from the group consisting of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is selected from the group consisting of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.
26 . A magnetic recording head comprising the SOT device of claim 23 .
27 . A magnetic recording device comprising the magnetic recording head of claim 26 .
28 . A magneto-resistive memory comprising the SOT device of claim 23 .
29 . A magnetic sensor comprising the SOT device of claim 23 .