Magnetic memory device with diffusion barrier

1 . A magnetic memory device, comprising:

a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked on a substrate,

wherein the non-magnetic pattern is interposed between the capping pattern and the diffusion barrier pattern,

wherein the diffusion barrier pattern includes a first non-magnetic metal and oxygen,

wherein the non-magnetic pattern includes a second non-magnetic metal and oxygen,

wherein the capping pattern comprises a third non-magnetic metal,

wherein an oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the second non-magnetic metal, and

wherein an oxide formation energy of the third non-magnetic metal is higher than the oxide formation energy of the second non-magnetic metal.

2 . The magnetic memory device of claim 1 , wherein a content of the oxygen in the diffusion barrier pattern increases toward the free magnetic pattern and decreases toward the non-magnetic pattern.

3 . The magnetic memory device of claim 1 , wherein

the diffusion barrier pattern comprises a first sub-diffusion barrier pattern and a second sub-diffusion barrier pattern, which are sequentially stacked,

the first sub-diffusion barrier pattern is adjacent to the free magnetic pattern,

the second sub-diffusion barrier pattern is adjacent to the non-magnetic pattern,

each of the first sub-diffusion barrier pattern and the second sub-diffusion barrier pattern includes the first non-magnetic metal and the oxygen, and

a content of the oxygen in the first sub-diffusion barrier pattern is greater than a content of the oxygen in the second sub-diffusion barrier pattern.

4 . The magnetic memory device of claim 3 , wherein

the diffusion barrier pattern further comprises a third sub-diffusion barrier pattern between the first sub-diffusion barrier pattern and the second sub-diffusion barrier pattern,

the third sub-diffusion barrier pattern includes the first non-magnetic metal and the oxygen, and

a content of the oxygen in the third sub-diffusion barrier pattern is

less than the content of the oxygen in the first sub-diffusion barrier pattern, and

greater than the content of the oxygen in the second sub-diffusion barrier pattern.

5 . The magnetic memory device of claim 1 , wherein the non-magnetic pattern further includes boron.

6 . The magnetic memory device of claim 1 , wherein the diffusion barrier pattern includes boron, and wherein a content of the boron in the diffusion barrier pattern increases toward the free magnetic pattern and decreases toward the non-magnetic pattern.

7 . The magnetic memory device of claim 1 , wherein the diffusion barrier pattern includes boron, and wherein:

the diffusion barrier pattern comprises a first sub-diffusion barrier pattern and a second sub-diffusion barrier pattern, which are sequentially stacked,

the first sub-diffusion barrier pattern is adjacent to the free magnetic pattern,

the second sub-diffusion barrier pattern is adjacent to the non-magnetic pattern,

each of the first sub-diffusion barrier pattern and the second sub-diffusion barrier pattern includes the first non-magnetic metal and the boron, and

a content of the boron in the first sub-diffusion barrier pattern is greater than a content of the boron in the second sub-diffusion barrier pattern.

8 . The magnetic memory device of claim 7 , wherein

the diffusion barrier pattern further comprises a third sub-diffusion barrier pattern between the first sub-diffusion barrier pattern and the second sub-diffusion barrier pattern,

the third sub-diffusion barrier pattern includes the first non-magnetic metal and the boron, and

a content of the boron in the third sub-diffusion barrier pattern is

less than the content of the boron in the first sub-diffusion barrier pattern, and

greater than the content of the boron in the second sub-diffusion barrier pattern.

9 . The magnetic memory device of claim 1 , wherein each of the diffusion barrier pattern and the non-magnetic pattern has a thickness of 1 Å to 15 Å.

10 . The magnetic memory device of claim 1 , wherein

the first non-magnetic metal includes at least one of hafnium (Hf), titanium (Ti), zirconium (Zr), niobium (Nb), vanadium (V), or scandium (Sc), and

the second non-magnetic metal includes at least one of tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), rhenium (Re), or manganese (Mn).

11 . A magnetic memory device, comprising:

a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked on a substrate,

wherein the diffusion barrier pattern includes a first non-magnetic metal, oxygen, and boron,

wherein the non-magnetic pattern includes a second non-magnetic metal, oxygen, and boron, and

wherein a boride formation energy of the first non-magnetic metal is lower than a boride formation energy of the second non-magnetic metal.

12 . The magnetic memory device of claim 11 , wherein an oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the second non-magnetic metal.

13 . The magnetic memory device of claim 11 , wherein a content of the oxygen in the diffusion barrier pattern increases toward the free magnetic pattern and decreases toward the non-magnetic pattern.

14 . The magnetic memory device of claim 11 , wherein

the diffusion barrier pattern comprises a first sub-diffusion barrier pattern and a second sub-diffusion barrier pattern, which are sequentially stacked,

the first sub-diffusion barrier pattern is adjacent to the free magnetic pattern,

the second sub-diffusion barrier pattern is adjacent to the non-magnetic pattern,

each of the first sub-diffusion barrier pattern and the second sub-diffusion barrier pattern includes the first non-magnetic metal and the oxygen, and

a content of the oxygen in the first sub-diffusion barrier pattern is greater than a content of the oxygen in the second sub-diffusion barrier pattern.

15 . The magnetic memory device of claim 11 , wherein a content of the boron in the diffusion barrier pattern increases toward the free magnetic pattern and decreases toward the non-magnetic pattern.

16 . The magnetic memory device of claim 11 , wherein

the diffusion barrier pattern comprises a first sub-diffusion barrier pattern and a second sub-diffusion barrier pattern, which are sequentially stacked,

the first sub-diffusion barrier pattern is adjacent to the free magnetic pattern,

the second sub-diffusion barrier pattern is adjacent to the non-magnetic pattern,

each of the first sub-diffusion barrier pattern and the second sub-diffusion barrier pattern includes the first non-magnetic metal and the boron, and

a content of the boron in the first sub-diffusion barrier pattern is greater than a content of the boron in the second sub-diffusion barrier pattern.

17 . A magnetic memory device, comprising:

a first conductive line on a substrate;

a second conductive line extending over the first conductive line; and

a memory cell between the first conductive line and the second conductive line,

wherein the memory cell includes a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked,

wherein the diffusion barrier pattern includes hafnium, oxygen, and boron,

wherein the non-magnetic pattern includes tantalum, oxygen, and boron, and

wherein each of the diffusion barrier pattern and the non-magnetic pattern has a thickness of 1 Å to 15 Å.

18 . The magnetic memory device of claim 17 , wherein a content of the oxygen in the diffusion barrier pattern increases toward the free magnetic pattern and decreases toward the non-magnetic pattern.

19 . The magnetic memory device of claim 17 , wherein

the diffusion barrier pattern comprises a first sub-diffusion barrier pattern and a second sub-diffusion barrier pattern, which are sequentially stacked,

the first sub-diffusion barrier pattern is adjacent to the free magnetic pattern,

the second sub-diffusion barrier pattern is adjacent to the non-magnetic pattern,

each of the first sub-diffusion barrier pattern and the second sub-diffusion barrier pattern includes the hafnium, the oxygen, and the boron, and

a content of the oxygen in the first sub-diffusion barrier pattern is greater than a content of the oxygen in the second sub-diffusion barrier pattern.

20 . The magnetic memory device of claim 17 , wherein a content of the boron in the diffusion barrier pattern increases toward the free magnetic pattern and decreases toward the non-magnetic pattern.