IP Library › Granted Patent US 12685044
Granted Patent B2
US 12685044 · App. 17/477,058 · Granted Jul 14, 2026

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

Inventors: Motomu Degai (Toyama, JP); Kimihiko Nakatani (Toyama, JP); Takashi Nakagawa (Toyama, JP); Takayuki Waseda (Toyama, JP)
Assignee: KOKUSAI ELECTRIC CORPORATION
H10P14/6339C23C16/042C23C16/52H10P14/432H10P14/6332H10P14/6905H10P14/69433
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Quick Facts
Patent No.
US 12685044
App. No.
17/477,058
Granted
Jul 14, 2026
Kind
B2
Abstract

There is provided a technique that includes: (a) supplying an adsorption suppressor to a substrate having a surface on which a first base and a second base are exposed under a first temperature to adsorb the adsorption suppressor on a surface of one base of the first base and the second base; (b) thermally annealing the substrate under a second temperature higher than the first temperature after adsorbing the adsorption suppressor on the surface of the one base; and (c) forming a film on a surface of the other base different from the one base of the first base and the second base by supplying a film-forming gas to the thermally-annealed substrate under a third temperature lower than the second temperature.

Claims (22)

1 . A method of selectively forming a film, comprising:

(a) supplying an adsorption suppressor to a substrate, whose surface has a first base and a second base, under a first temperature of 80 degrees Celsius or higher to adsorb the adsorption suppressor on a surface of one of the first base and the second base;

(b) annealing the substrate under a second temperature higher than the first temperature after adsorbing the adsorption suppressor on the surface of the one base; and

(c) forming a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base, by supplying a film-forming gas to the annealed substrate under a third temperature lower than the second temperature,

wherein the surface of the substrate further has a third base,

wherein in (a), the adsorption suppressor is adsorbed on a surface of the third base, and

wherein the first base includes a conductive metal element-containing film, the second base includes a nitride film, and the third base includes an oxide film.

2 . The method of claim 1 , where in (a), the adsorption suppressor is adsorbed on the surface of the one of the first base and the second base while the adsorption suppressor is suppressed from being adsorbed on the surface of the other of the first base and the second base.

3 . The method of claim 1 , wherein (a) is performed under a condition that the adsorption suppressor does not undergo gas phase decomposition.

4 . The method of claim 1 , wherein an adsorption state of the adsorption suppressor adsorbed on the surface of the one of the first base and the second base in (a) includes physical adsorption.

5 . The method of claim 4 , wherein in (b), the adsorption state of the adsorption suppressor adsorbed on the surface of the one of the first base and the second base is shifted to chemical adsorption.

6 . The method of claim 1 , wherein in (b), an adsorption state of the adsorption suppressor adsorbed on the surface of the one of the first base and the second base is changed to an adsorption state more stable than the adsorption state of the adsorption suppressor adsorbed on the surface of the one of the first base and the second base in (a).

7 . The method of claim 1 , wherein in (c), the film is formed on the surface of the other of the first base and the second base while the film is not formed on the surface of the one of the first base and the second base.

8 . The method of claim 1 , wherein an adsorption state of the adsorption suppressor adsorbed on the surface of the third base in (a) includes chemical adsorption.

9 . The method of claim 1 , wherein an adsorption state of the adsorption suppressor adsorbed on the surface of the third base in (a) is more stable than an adsorption state of the adsorption suppressor adsorbed on the surface of the one of the first base and the second base in (a).

10 . The method of claim 1 , wherein in (c), the film is formed on the surface of the other of the first base and the second base while the film is not formed on the surface of the one of the first base and the second base and not formed on the surface of the third base.

11 . The method of claim 1 , wherein the first base includes an oxygen-free and metal element-containing film, the second base includes an oxygen-free and semi-metal element-containing film, and the third base includes an oxygen-containing film.

12 . The method of claim 1 , wherein the first base includes a transition metal-containing film, the second base includes a silicon- and nitrogen-containing film, and the third base includes a silicon- and oxygen-containing film.

13 . The method of claim 11 , wherein the one of the first base and the second base is the second base, and the other of the first base and the second base is the first base.

14 . The method of claim 1 , wherein the first base includes an oxygen-free and metal element-containing film, and the second base includes an oxygen-free and semi-metal element-containing film.

15 . The method of claim 14 , wherein the one of the first base and the second base is the second base, and the other of the first base and the second base is the first base.

16 . The method of claim 1 , wherein at least one selected from the group of (a), (b), and (c) is performed under a non-plasma atmosphere.