Substrate processing method and substrate processing apparatus
A substrate processing method includes: preparing a substrate having a target film on a surface; forming a barrier film that covers the target film; supplying a deuterium gas and an oxygen gas to the target film covered with the barrier film, thereby implanting deuterium into the target film; and removing the barrier film after the deuterium is implanted into the target film.
1 . A substrate processing method comprising:
preparing a substrate having a target film on a surface;
forming a barrier film that covers the target film;
supplying a deuterium gas and an oxygen gas to the target film covered with the barrier film, thereby implanting deuterium into the target film; and
removing the barrier film after the deuterium is implanted into the target film.
2 . The substrate processing method according to claim 1 , wherein the forming of the barrier film, the implanting of the deuterium, and the removing of the barrier film are performed in a same processing chamber.
3 . The substrate processing method according to claim 2 , wherein the target film is a film containing silicon and nitrogen.
4 . The substrate processing method according to claim 3 , wherein the target film is a silicon nitride film or a silicon oxynitride film.
5 . The substrate processing method according to claim 1 ,
wherein the implanting of the deuterium includes:
housing the substrate in a processing chamber that is depressurized to 1 Torr or less;
maintaining the substrate at a temperature of 300° C. or more and less than 900° C.; and
supplying the deuterium gas and the oxygen gas into the processing chamber.
6 . The substrate processing method according to claim 5 , wherein a ratio of a flow rate of the deuterium gas to a flow rate of the oxygen gas supplied into the processing chamber is 2 or more and 20 or less.
7 . The substrate processing method according to claim 6 , wherein the target film is a film containing silicon and nitrogen.
8 . The substrate processing method according to claim 7 , wherein the target film is a silicon nitride film or a silicon oxynitride film.
9 . The substrate processing method according to claim 5 , wherein the target film is a film containing silicon and nitrogen.
10 . The substrate processing method according to claim 9 , wherein the target film is a silicon nitride film or a silicon oxynitride film.
11 . The substrate processing method according to claim 1 , wherein the barrier film is a film in which an amount of passing the deuterium is larger than an amount of passing oxygen.
12 . The substrate processing method according to claim 11 , wherein the target film is a film containing silicon and nitrogen.
13 . The substrate processing method according to claim 12 , wherein the target film is a silicon nitride film or a silicon oxynitride film.
14 . The substrate processing method according to claim 1 , wherein the barrier film includes silicon oxide, aluminum oxide, or polysilicon.
15 . The substrate processing method according to claim 14 , wherein the target film is a film containing silicon and nitrogen.
16 . The substrate processing method according to claim 15 , wherein the target film is a silicon nitride film or a silicon oxynitride film.
17 . The substrate processing method according to claim 1 , wherein
the barrier film includes silicon oxide, and
the removing of the barrier film includes supplying a hydrogen fluoride gas and an ammonia gas to the substrate.
18 . The substrate processing method according to claim 1 , wherein the target film is a film containing silicon and nitrogen.
19 . The substrate processing method according to claim 18 , wherein the target film is a silicon nitride film or a silicon oxynitride film.
20 . A substrate processing apparatus comprising:
a processing chamber;
a gas supplier; and
a controller, wherein
the controller includes a processor, a memory, and a program stored in the memory, wherein the program, when executed, causes the substrate processing apparatus to:
house a substrate having a target film on a surface in the processing chamber;
form a barrier film that covers the target film in the processing chamber;
supply, from the gas supplier, a deuterium gas and an oxygen gas into the processing chamber, thereby implanting deuterium into the target film covered with the barrier film; and
remove the barrier film in the processing chamber after the deuterium is implanted into the target film.