Substrate treating method and substrate treating apparatus
This disclosure relates to a substrate treating method and a substrate treating apparatus. An additive is dissolved in a first treatment liquid. The first treatment liquid contains iodide ions (I − ). The substrate treating method includes an adjusting step and a supplying step. In the adjusting step, decrease in iodide ions (I − ) contained in the first treatment liquid is suppressed. Accordingly, the first treatment liquid contains a sufficient amount of iodide ions (I − ). In the supplying step, the first treatment liquid adjusted in the adjusting step is supplied to a substrate. Moreover, in the supplying step, a first etchant for etching the substrate is supplied to the substrate.
1 . A substrate treating method for performing treatment on a substrate, the substrate treating method comprising:
an adjusting step of suppressing decrease in iodide ions (I) contained in a first treatment liquid where an additive is dissolved; and
a supplying step of supplying the first treatment liquid, adjusted in the adjusting step, and a first etchant for etching the substrate to the substrate, wherein
a concentration of dissolved oxygen in the first treatment liquid is lowered in the adjusting step.
2 . The substrate treating method according to claim 1 , wherein
in the supplying step, a mixed liquid, generated by adding the first treatment liquid adjusted in the adjusting step to the first etchant, is supplied to the substrate.
3 . The substrate treating method according to claim 1 , wherein
the first treatment liquid is an aqueous solution in which the additive is dissolved in deionized water.
4 . The substrate treating method according to claim 1 , wherein
the additive releases the iodide ions (I) therefrom into the first treatment liquid.
5 . The substrate treating method according to claim 1 , wherein
the additive contains at least one selected from
tetramethylammonium iodide (TMAI),
tetraethylammonium iodide (TEAI),
tetrapropylammonium iodide (TPAI),
tetrabutylammonium iodide,
ammonium iodide, and
hydrogen iodide.
6 . The substrate treating method according to claim 1 , wherein
inert gas is supplied into the first treatment liquid to generate gas bubbles in the first treatment liquid in the adjusting step.
7 . The substrate treating method according to claim 1 , wherein
at least one selected from a concentration of the iodide ions (I) in the first treatment liquid, an oxidation-reduction potential in the first treatment liquid, and a concentration of dissolved oxygen in the first treatment liquid is detected in the adjusting step.
8 . The substrate treating method according to claim 7 , wherein
the adjusting step starts and ends in accordance with at least one selected from a detection result of the concentration of the iodide ions (I) in the first treatment liquid, a detection result of the oxidation-reduction potential in the first treatment liquid, and a detection result of the concentration of the dissolved oxygen in the first treatment liquid.
9 . The substrate treating method according to claim 7 , wherein
at least either the additive or a solvent of the additive is supplemented to the first treatment liquid in accordance with at least one selected from a detection result of the concentration of the iodide ions (I) in the first treatment liquid, a detection result of the oxidation-reduction potential in the first treatment liquid, and a detection result of the concentration of the dissolved oxygen in the first treatment liquid.
10 . A substrate treating method for performing treatment on a substrate, the substrate treating method comprising:
an adjusting step of suppressing decrease in iodide ions (I) contained in a first treatment liquid where an additive is dissolved; and
a supplying step of supplying the first treatment liquid adjusted in the adjusting step to the substrate, wherein
the first treatment liquid further contains an etchant for etching the substrate, and
a concentration of dissolved oxygen in the first treatment liquid is lowered in the adjusting step.
11 . A substrate treating method for performing treatment on a substrate, the substrate treating method comprising:
an adjusting step of suppressing decrease in iodide ions (I) contained in a first treatment liquid where an additive is dissolved; and
a supplying step of supplying the first treatment liquid, adjusted in the adjusting step, and a first etchant for etching the substrate to the substrate, wherein
the first treatment liquid is degassed in the adjusting step.
12 . The substrate treating method according to claim 11 , wherein
a gas-liquid separating unit filters the first treatment liquid to degas the first treatment liquid in the adjusting step.
13 . A substrate treating method for performing treatment on a substrate, the substrate treating method comprising:
an adjusting step of suppressing decrease in iodide ions (I) contained in a first treatment liquid where an additive is dissolved; and
a supplying step of supplying the first treatment liquid adjusted in the adjusting step to the substrate, wherein
the first treatment liquid further contains an etchant for etching the substrate, and
the first treatment liquid is degassed in the adjusting step.