Polishing liquid and chemical mechanical polishing method
An object of the present invention is to provide a polishing liquid which reduces the occurrence of dishing on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished. In addition, another object of the present invention is to provide a chemical mechanical polishing method using the above-mentioned polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, including colloidal silica, a nitrogen-containing aromatic heterocycle, and hydrogen peroxide, in which at least a specific nitrogen-containing aromatic heterocyclic compound (1), a specific nitrogen-containing aromatic heterocyclic compound (2) different from the nitrogen-containing aromatic heterocyclic compound (1) are included as the nitrogen-containing aromatic heterocyclic compound.
1 . A polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, the polishing liquid comprising:
colloidal silica;
a nitrogen-containing aromatic heterocyclic compound; and
hydrogen peroxide,
wherein at least a nitrogen-containing aromatic heterocyclic compound (1) and a nitrogen-containing aromatic heterocyclic compound (2) different from the nitrogen-containing aromatic heterocyclic compound (1) are included as the nitrogen-containing aromatic heterocyclic compound, and
the nitrogen-containing aromatic heterocyclic compound (1) is selected from the group consisting of a compound represented by General Formula (I) and a compound represented by General Formula (II), the nitrogen-containing aromatic heterocyclic compound (2) is selected from the group consisting of a compound represented by General Formula (II) and a compound represented by General Formula (III), or
the nitrogen-containing aromatic heterocyclic compound (1) and the nitrogen-containing aromatic heterocyclic compound (2) are two selected from the group consisting of a compound represented by General Formula (IV) and a compound represented by General Formula (V),
in General Formula (I), R 11 and R 12 each independently represent a hydrogen atom or a substituted or unsubstituted hydrocarbon group, and R 11 and R 12 may be bonded to each other to form a ring,
in General Formula (II), R 21 represents a hydroxyl group or a substituted or unsubstituted hydrocarbon group, and R 22 represents a hydrogen atom, a hydroxyl group, or a substituted or unsubstituted hydrocarbon group,
in General Formula (III), R 31 represents a substituted or unsubstituted hydrocarbon group, and R 32 represents a hydrogen atom or a substituted or unsubstituted hydrocarbon group,
in General Formula (IV), R 41 represents a hydrogen atom, and R 42 represents a hydrogen atom, a hydroxyl group, a mercapto group, or an amino group,
in General Formula (V), R 51 and R 52 each independently represent a hydrogen atom or a substituted or unsubstituted hydrocarbon group, provided that at least one of R 51 or R 52 represents the substituted or unsubstituted hydrocarbon group.
2 . The polishing liquid according to claim 1 , further comprising one or more passivation film forming agents selected from the group consisting of a compound represented by General Formula (1) and a compound represented by General Formula (2),
in General Formula (1), R 1 to R 5 each independently represent a hydrogen atom or a substituent, and
two adjacent groups in R 1 to R 5 may be bonded to each other to form a ring, and
in General Formula (2), R 6 to R 10 each independently represent a hydrogen atom or a substituent, and
two adjacent groups in R 6 to R 10 may be bonded to each other to form a ring.
3 . The polishing liquid according to claim 2 , wherein in General Formula (1), R 1 to R 5 each independently represent an alkyl group, a nitro group, an amino group or a hydroxyl group.
4 . The polishing liquid according to claim 2 , wherein the passivation film forming agent is 1,4,5,8-naphthalenetetracarboxylic acid or 6-hydroxy-2-naphthalenecarboxylic acid.
5 . The polishing liquid according to claim 2 , wherein a C log P value of the passivation film forming agent is 1.0 to 3.8.
6 . The polishing liquid according to claim 2 ,
wherein the passivation film forming agent is one or more selected from the group consisting of 4-methylphthalic acid, 4-nitrophthalic acid, salicylic acid, 4-methylsalicylic acid, anthranilic acid, 4-methylbenzoic acid, 4-tert-butylbenzoic acid, 4-propylbenzoic acid, 1,4,5,8-naphthalenetetracarboxylic acid, 6-hydroxy-2-naphthalenecarboxylic acid, 1-hydroxy-2-naphthalenecarboxylic acid, 3-hydroxy-2-naphthalenecarboxylic acid, quinaldic acid, 8-hydroxyquinoline, and 2-methyl-8-hydroxyquinoline.
7 . The polishing liquid according to claim 2 , further comprising an anionic surfactant.
8 . The polishing liquid according to claim 7 ,
wherein a mass ratio of a content of the passivation film forming agent to a content of the anionic surfactant is more than 0.01 and less than 150.
9 . The polishing liquid according to claim 7 ,
wherein a value of a difference obtained by subtracting a C log P value of the passivation film forming agent from a C log P value of the anionic surfactant is more than 2.00 and less than 8.00.
10 . The polishing liquid according to claim 7 ,
wherein a value of a difference obtained by subtracting a C log P value of the passivation film forming agent from a C log P value of the anionic surfactant is 2.50 to 6.00.
11 . The polishing liquid according to claim 1 , further comprising one or more organic acids selected from the group consisting of glycine, alanine, sarcosine, iminodiacetic acid, polycarboxylic acid, and polyphosphonic acid.
12 . The polishing liquid according to claim 1 , further comprising a nitrogen-containing aromatic heterocyclic compound other than the compounds represented by General Formulae (I) to (V).
13 . The polishing liquid according to claim 1 , further comprising a polymer compound.
14 . The polishing liquid according to claim 1 , further comprising a cationic compound.
15 . The polishing liquid according to claim 1 ,
wherein a mass ratio of a content of the nitrogen-containing aromatic heterocyclic compound (1) to a content of the nitrogen-containing aromatic heterocyclic compound (2) is 30 to 15,000.
16 . The polishing liquid according to claim 1 ,
wherein a pH of the polishing liquid is 2.0 to 12.0.
17 . The polishing liquid according to claim 1 , further comprising an organic solvent.
18 . The polishing liquid according to claim 1 ,
wherein a content of the colloidal silica is 10% by mass or less with respect to a total mass of the polishing liquid, and
an average primary particle diameter of the colloidal silica is 60 nm or less.
19 . The polishing liquid according to claim 1 ,
wherein a concentration of solid contents is 5% by mass or more, and
the polishing liquid is used after 2-times or more dilution on a mass basis.
20 . A polishing liquid used for chemical mechanical polishing of an object to be polished, the polishing liquid comprising:
abrasive grains;
a nitrogen-containing aromatic heterocyclic compound; and
hydrogen peroxide,
wherein at least a nitrogen-containing aromatic heterocyclic compound (1) and a nitrogen-containing aromatic heterocyclic compound (2) different from the nitrogen-containing aromatic heterocyclic compound (1) are included as the nitrogen-containing aromatic heterocyclic compound, and
the nitrogen-containing aromatic heterocyclic compound (1) is selected from the group consisting of a compound represented by General Formula (I) and a compound represented by General Formula (II),the nitrogen-containing aromatic heterocyclic compound (2) is selected from the group consisting of a compound represented by General Formula (II) and a compound represented by General Formula (III), or
the nitrogen-containing aromatic heterocyclic compound (1) and the nitrogen-containing aromatic heterocyclic compound (2) are two selected from the group consisting of a compound represented by General Formula (IV) and a compound represented by General Formula (V),
in General Formula (I), R 11 and R 12 each independently represent a hydrogen atom or a substituted or unsubstituted hydrocarbon group, and R 11 and R 12 may be bonded to each other to form a ring,
in General Formula (II), R 21 represents a hydroxyl group or a substituted or unsubstituted hydrocarbon group, and R 22 independently represents a hydrogen atom, a hydroxyl group, or a substituted or unsubstituted hydrocarbon group,
in General Formula (III), R 31 represents a substituted or unsubstituted hydrocarbon group, and R 32 represents a hydrogen atom or a substituted or unsubstituted hydrocarbon group,
in General Formula (IV), R 41 represents a hydrogen atom, and R 42 represents a hydrogen atom, a hydroxyl group, a mercapto group, or an amino group,
in General Formula (V), R 51 and R 52 each independently represent a hydrogen atom or a substituted or unsubstituted hydrocarbon group, provided that at least one of R 51 or R 52 represents the substituted or unsubstituted hydrocarbon group.
21 . A chemical mechanical polishing method comprising:
a step of obtaining an object to be polished, which has been polished, by bringing a surface to be polished of an object to be polished into contact with a polishing pad attached to a polishing platen while supplying the polishing liquid according to claim 1 to the polishing pad, and relatively moving the object to be polished and the polishing pad to polish the surface to be polished.
22 . The chemical mechanical polishing method according to claim 21 ,
wherein a polishing pressure is 0.5 to 3.0 psi.
23 . The chemical mechanical polishing method according to claim 21 ,
wherein a supply rate of the polishing liquid supplied to the polishing pad is 0.14 to 0.35 ml/(min·cm 2 ).
24 . The chemical mechanical polishing method according to claim 21 ,
wherein the object to be polished has at least a first layer containing cobalt and a second layer other than the first layer, and
the second layer includes one or more materials selected from the group consisting of tantalum, tantalum nitride, titanium nitride, silicon nitride, tetraethoxysilane, silicon oxycarbide, and silicon carbide.
25 . The chemical mechanical polishing method according to claim 21 , further comprising a step of cleaning the object to be polished, which has been polished, with an alkaline cleaning liquid after the step of obtaining the object to be polished, which has been polished.