Etching control system and etching control method

1 . An etching control system including a prediction device and an etching control device,

wherein the prediction device comprises:

a first controller and a first storage storing a first computer program, wherein the first storage and the first computer program and configured, with the first controller, to:

update, to optimize a model indicating a relationship between distribution of an etching amount within a surface of a substrate and a process parameter, which is a parameter of controlling operations of multiple nozzles configured to etch the substrate, a parameter of the model;

calculate the process parameter corresponding to distribution of a designated etching amount by using the model whose parameter has been updated; and

provide the calculated process parameter, and

wherein the etching control device comprises:

a second controller and a second storage storing a second computer program, wherein the second storage and the second computer program and configured, with the second controller, to:

acquire the process parameter; and

control the operations of the multiple nozzles by using the acquired process parameter,

wherein, among the multiple nozzles, one nozzle is maintained at a fixed position relative to the substrate while the other nozzle is movable relative to the substrate, and

wherein the second controller is configured to control a movement of the other nozzle based on the process parameter while maintaining the one nozzle at the fixed position.

2 . The etching control system of claim 1 ,

wherein the second controller acquires the process parameter inputted through an input device provided in the etching control device.

3 . The etching control system of claim 1 , further comprising:

a management server connected to the prediction device and the etching control device,

wherein the second controller acquires the process parameter inputted through a management application provided by the management server.

4 . The etching control system of claim 1 ,

wherein the provider inputs the process parameter calculated by the calculator to a Host IF (interface) configured to connect the prediction device and the etching control device, and

the second controller acquires the process parameter inputted to the Host IF.

5 . The etching control system of claim 1 ,

wherein the first controller updates, to optimize a model indicating a relationship between distribution of an etching amount and a process parameter, which is a parameter of determining a discharge time, a discharge position, and a moving speed of each of a first nozzle configured to discharge a rinse on the substrate being rotated and a second nozzle configured to discharge a chemical liquid for etching the substrate, a parameter of the model.

6 . An etching control method performed by an etching control system including a prediction device and an etching control device, the etching control method comprising:

updating, to optimize a model indicating a relationship between distribution of an etching amount within a surface of a substrate and a process parameter, which is a parameter of controlling operations of multiple nozzles configured to etch the substrate, a parameter of the model by the prediction device;

calculating, by using the model whose parameter has been updated through the updating of the parameter, the process parameter corresponding to distribution of a designated etching amount by the prediction device;

providing, by the prediction device, the process parameter calculated through the calculating of the process parameter;

acquiring the process parameter by the etching control device; and

controlling, by using the process parameter acquired through the acquiring of the process parameter, the operations of the multiple nozzles by the etching control device,

wherein the controlling of the operations of the multiple nozzles comprises maintaining one of the multiple nozzles at a fixed position relative to the substrate and controlling a movement of the other nozzle relative to the substrate based on the process parameter.