Wafer processing method and wafer processing system
A wafer processing method includes an outer edge removing step of removing an outer edge of a first wafer having a first wiring layer formed on a front surface thereof from the front surface, and a polishing step of polishing the first wiring layer on the front surface of the first wafer after the outer edge removing step.
1 . A wafer processing method comprising:
an outer edge removing step of removing an outer edge of a first wafer having a first wiring layer formed on a front surface thereof from the front surface;
a polishing step of polishing the front surface of the first wafer after the outer edge removing step; and
wherein the polishing step is started in a state where a processing liquid supplied in the outer edge removing step remains on the front surface of the first wafer.
2 . The wafer processing method according to claim 1 , further comprising:
a bonding step of bonding the first wafer and a second wafer having a second wiring layer formed on a front surface thereof to each other,
wherein the first wiring layer and the second wiring layer are joined to each other in the bonding step.
3 . The wafer processing method according to claim 2 , further comprising:
a back surface grinding step of grinding a back surface of the first wafer to a finish thickness after the bonding step,
wherein a thickness removed from the front surface is deeper than the finish thickness of the first wafer in the outer edge removing step.
4 . The wafer processing method according to claim 1 ,
wherein the polishing step is wet polishing using a polishing liquid.