Support glass substrate and laminated substrate using same
A support glass substrate of the present invention is a support glass substrate for supporting a substrate to be processed, the support glass substrate including lithium aluminosilicate-based glass, having a content of Li 2 O of from 0.02 mol % to 25 mol % in a glass composition, and having an average linear thermal expansion coefficient within a temperature range of from 30° C. to 380° C. of 38×10 −7 /° C. or more and 160×10 −7 /° C. or less.
1 . A support glass substrate for supporting a substrate to be processed, the support glass substrate comprising lithium aluminosilicate-based glass, having as a glass composition, in terms of mol %, 50% to 80% of SiO 2 , 4% to 25% of Al 2 O 3 , 0% to 16% of B 2 O 3 , 0.9% to 15% of Li 2 O, 8.09% to 21% of Na 2 O, 0% to 15% of K 2 O, 0% to 10% of MgO, 0% to 10% of ZnO, and 0.1% to 15% of P 2 O 5 , having 0.1 to 0.99 of a molar ratio [Li 2 O]/([Na 2 O]+[K 2 O]), and having an average linear thermal expansion coefficient within a temperature range of from 30° C. to 380° C. of 38×10 −7 /° C. or more and 160×10 −7 /° C. or less.
2 . The support glass substrate according to claim 1 , wherein the support glass substrate satisfies the following relationship: a molar ratio ([Na 2 O]—[Li 2 O])/([Al 2 O 3 ]+[B 2 O 3 ]+[P 2 O 5 ])≤1.50.
3 . The support glass substrate according to claim 1 , wherein the support glass substrate satisfies the following relationship: a molar ratio ([B 2 O 3 ]+[Na 2 O]—[P 2 O 5 ])/([Al 2 O 3 ]+[Li 2 O])≥0.001.
4 . The support glass substrate according to claim 1 , wherein the support glass substrate comprises 12 mol % or more of ([Li 2 O]+[Na 2 O]+[K 2 O]), and satisfies the following relationship: [SiO 2 ]+1.2×[P 2 O 5 ]−3×[Al 2 O 3 ]−2×[Li 2 O]−1.5×[Na 2 O]—[K 2 O]—[B 2 O 3 ]≥−40%.
5 . The support glass substrate according to claim 1 , wherein the support glass substrate has a temperature at a high temperature viscosity of 10 2.5 dPa·s of less than 1,660° C.
6 . The support glass substrate according to claim 1 , wherein the support glass substrate comprises overflow-merged surfaces in a middle portion thereof in a sheet thickness direction.
7 . The support glass substrate according to claim 1 , wherein the support glass substrate has a mass loss of 100.0 mg/cm 2 or less per unit surface area when immersed in a 5 mass % HCl aqueous solution warmed to 80° C. for 24 hours.
8 . The support glass substrate according to claim 1 , wherein the support glass substrate has a mass loss of 5.0 mg/cm 2 or less per unit surface area when immersed in a 5 mass % NaOH aqueous solution warmed to 80° C. for 6 hours.
9 . The support glass substrate according to claim 1 , wherein the support glass substrate comprises a compressive stress layer in a glass surface thereof.
10 . The support glass substrate according to claim 9 , wherein the compressive stress layer has a compressive stress value of from 165 MPa to 1,000 MPa on an outermost surface.
11 . The support glass substrate according to claim 9 , wherein the compressive stress layer has a depth of layer of from 50 μm to 200 μm.
12 . The support glass substrate according to claim 1 , wherein the support glass substrate comprises a compressive stress layer in a glass surface thereof, comprises, as the glass composition, 17 mol % or more of Al 2 O 3 , 1 mol % or more of P 2 O 5 , and 12 mol % or more of ([Li 2 O]+[Na 2 O]+[K 2 O]), and satisfies the following relationship: [SiO 2 ]+1.2×[P 2 O 5 ]−3×[Al 2 O 3 ]−2×[Li 2 O]−1.5×[Na 2 O]—[K 2 O]—[B 2 O 3 ]≥−20 mol %.
13 . The support glass substrate according to claim 9 , wherein the support glass substrate has a stress profile having at least a first peak, a second peak, a first bottom, and a second bottom in a thickness direction.
14 . The support glass substrate according to claim 1 , wherein the support glass substrate has a wafer shape or a substantially disc shape having a diameter of from 100 mm to 500 mm, has a sheet thickness of less than 2.0 mm, has a total thickness variation (TTV) of 5 μm or less, and has a warpage level of 60 μm or less.
15 . The support glass substrate according to claim 1 , wherein the support glass substrate has a substantially rectangular shape with a length of a side of 200 mm or more, has a sheet thickness of 1.0 mm or more, and has a total thickness variation (TTV) of 30 μm or less.
16 . The support glass substrate according to claim 15 , wherein the support glass substrate has a corner angle of from 89.0° to 91.0° when seen from above.
17 . The support glass substrate according to claim 1 , wherein the support glass substrate comprises a positioning portion in an outer peripheral portion thereof.
18 . The support glass substrate according to claim 17 , wherein the positioning portion has any one of a notch structure, a chamfer structure, and a cutout structure.
19 . A laminate, comprising at least a substrate to be processed and a support glass substrate for supporting the substrate to be processed, wherein the support glass substrate is the support glass substrate according to claim 1 .
20 . The laminate according to claim 19 , wherein the substrate to be processed comprises at least a semiconductor chip molded with a sealing material.
21 . A method of manufacturing a semiconductor package, the method comprising the steps of:
preparing a laminate comprising at least a substrate to be processed and a support glass substrate for supporting the substrate to be processed; and
subjecting the substrate to be processed to processing treatment,
wherein the support glass substrate is the support glass substrate according to claim 1 .
22 . The method of manufacturing a semiconductor package according to claim 21 , wherein the step of subjecting the substrate to be processed to processing treatment comprises arranging wiring on one surface of the substrate to be processed.
23 . The method of manufacturing a semiconductor package according to claim 21 , wherein the step of subjecting the substrate to be processed to processing treatment comprises forming a solder bump on one surface of the substrate to be processed.