Micro-LED wafer testing device and micro-LED wafer testing method
A micro-LED wafer testing device, being applied to test a micro-LED wafer including a metal substrate and a plurality of micro-LEDs disposed at the metal substrate periodically, includes a transparent substrate, a plurality of through holes disposed at the transparent substrate periodically, and a plurality of testing elements respectively disposed at the through holes. Each of the testing elements includes a metal post filled in one of the through holes, and a dielectric portion connected to a lower end of the metal post. The dielectric portions of the testing elements contact a plurality of contacted members of the micro-LEDs, and a top end of each of the metal posts and the metal substrate are powered to conduct an illustrating test for the contacted members of the micro-LEDs.
1 . A micro-LED wafer testing device, being applied to test a micro-LED wafer, the micro-LED wafer comprising a metal substrate and a plurality of micro-LEDs, the micro-LEDs disposed at the metal substrate periodically, the micro-LED wafer testing device comprising:
a transparent substrate;
a plurality of through holes disposed at the transparent substrate periodically; and
a plurality of testing elements respectively disposed at the through holes, each of the testing elements comprising:
a metal post filled in one of the through holes; and
a dielectric portion connected to a lower end of the metal post;
wherein the dielectric portions of the testing elements contact a plurality of contacted members of the micro-LEDs, and a top end of each of the metal posts and the metal substrate are powered to conduct an illustrating test for the contacted members of the micro-LEDs.
2 . The micro-LED wafer testing device of claim 1 , wherein two of the contacted members that are contacted by adjacent two of the dielectric portions are adjacent to each other.
3 . The micro-LED wafer testing device of claim 1 , wherein at least one of a plurality of none-contacted members of the micro-LEDs that is not contacted by the dielectric portions is located between two of the contacted members that are contacted by adjacent two of the dielectric portions.
4 . The micro-LED wafer testing device of claim 1 , further comprising:
a plurality of electrode pads disposed at the transparent substrate, each of the electrode pads being signally connected to the top end of each of the metal posts.
5 . The micro-LED wafer testing device of claim 4 , wherein the electrode pads are arranged at an edge of an upper surface of the transparent substrate.
6 . The micro-LED wafer testing device of claim 1 , wherein the lower end of each of the metal posts has a plane structure.
7 . The micro-LED wafer testing device of claim 1 , wherein each of the metal posts is made of copper, and each of the dielectric portions is made of SiO 2 .
8 . The micro-LED wafer testing device of claim 1 , wherein a diameter of each of the dielectric portions is larger than a diameter of each of the metal posts.
9 . The micro-LED wafer testing device of claim 1 , wherein each of the dielectric portions has a flat surface.
10 . A micro-LED wafer testing method, comprising:
a micro-LED wafer testing device placing step, wherein a micro-LED wafer testing device is placed on a micro-LED wafer, the micro-LED wafer comprises a metal substrate and a plurality of micro-LEDs disposed at the metal substrate periodically, a plurality of testing elements of the micro-LED wafer testing device contact a plurality of contacted members of the micro-LEDs, the testing elements are arranged periodically, each of the testing elements comprises a metal post and a dielectric portion, and each of the dielectric portions is connected to a lower end of each of the metal posts and faces toward the micro-LED wafer; and
a testing step, wherein a top end of each of the metal posts and the metal substrate are powered to conduct an illustrating test for the contacted members of the micro-LEDs.
11 . The micro-LED wafer testing method of claim 10 , wherein in the testing step, a plurality of plus wave voltages are respectively provided to the metal posts by a controller.
12 . The micro-LED wafer testing method of claim 11 , wherein in the testing step, each of the plus wave voltages comprises a voltage boosting segment, a positive voltage segment, a voltage decreasing segment and a negative voltage segment in order, the controller provides a first member of the plus wave voltages to power a first powered member of the metal posts, and the controller provides the voltage boosting segment of a second member of the plus wave voltages to power a second powered member of the metal posts within the voltage decreasing segment of the first member of the plus wave voltages.
13 . The micro-LED wafer testing method of claim 10 , further comprising a moving step, wherein as the contacted members of the micro-LEDs complete the illustrating test, the micro-LED wafer testing device is moved, and the testing elements of the micro-LED wafer testing device contact a plurality of new-contacted members of the micro-LEDs.
14 . The micro-LED wafer testing method of claim 10 , wherein in the micro-LED wafer testing device placing step, two of the contacted members that are contacted by adjacent two of the dielectric portions are adjacent to each other.
15 . The micro-LED wafer testing method of claim 10 , wherein in the micro-LED wafer testing device placing step, at least one of a plurality of none-contacted members of the micro-LEDs that are not contacted by the dielectric portions is located between two of the contacted members that are contacted by adjacent two of the dielectric portions.