In-situ integrated wafer parameter detection system with remote plasma cleaning
Methods and systems for monitoring wafer processing results continuously and in real-time. In some embodiments, a system may comprise at least one non-active chamber with at least one feedthrough access port which is configured to interact with a metrology apparatus. The feedthrough access port has a surface exposed to an inner volume of the non-active chamber and has a fluorine-based coating covering the surface. The non-active chamber has a wafer access port to one or more other chambers. The metrology apparatus is positioned external to the non-active chamber and is oriented to detect metrology data through one of the feedthrough access ports. A data collection apparatus is connected to the metrology apparatus and configured to continuously receive data from the metrology apparatus.
1 . A system for monitoring wafer processing results, comprising:
at least one non-active chamber with at least one feedthrough access port, wherein the feedthrough access port is configured to interact with a metrology apparatus, wherein the at least one feedthrough access port has a surface exposed to an inner volume of the at least one non-active chamber that has a fluorine-based coating covering the surface, and wherein the at least one non-active chamber has a wafer access port to one or more other chambers;
the metrology apparatus positioned external to the at least one non-active chamber and oriented to detect metrology data through one of the at least one feedthrough access port;
a cleaning apparatus connected to at least one cleaning port, wherein the at least one cleaning port is positioned on a top or a bottom of the at least one non-active chamber, wherein one of the at least one cleaning port is in proximity of at least one feedthrough access port, wherein the cleaning apparatus interacts with a remote plasma source and is configured to inject radicals from the remote plasma source into the at least one non-active chamber via one of the at least one cleaning port to clean the fluorine-based coating covering the surface, and wherein the at least one cleaning port has at least one nozzle directed towards the at least one feedthrough access port; and
a data collection apparatus connected to the metrology apparatus and configured to continuously receive data from the metrology apparatus.
2 . The system of claim 1 , wherein the at least one nozzle is a plurality of nozzles with at least one of the plurality of nozzles directed towards each of the at least one feedthrough access port and wherein the plurality of nozzles is connected to one of the at least one cleaning port.
3 . The system of claim 1 , wherein the cleaning apparatus is within 6 cm or less of the at least one feedthrough access port and wherein the cleaning apparatus is configured to supply fluorine or oxygen gas-based radicals into the at least one non-active chamber.
4 . The system of claim 1 , wherein the cleaning apparatus is interconnected to the data collection apparatus and configured to perform cleaning when data from the metrology apparatus is faulty.
5 . The system of claim 1 , wherein one of the at least one feedthrough access port is a viewport.
6 . The system of claim 5 , wherein the viewport is formed from a quartz material.
7 . The system of claim 1 , wherein the metrology apparatus includes one or more of a reflectometer, an ellipsometer, and a micro-Raman spectroscopy device.
8 . The system of claim 1 , further comprising:
a metrology process apparatus interconnected with one or more wafer process chambers, the metrology process apparatus includes a trained metrology model that is configured to receive the data from the data collection apparatus and configured to alter at least one wafer process of the one or more wafer process chambers based on the data.
9 . The system of claim 1 , wherein the fluorine-based coating is a non-metal fluorine-based coating.
10 . The system of claim 1 , wherein the at least one non-active chamber is a transfer chamber, a load lock chamber, or a via chamber.
11 . A system for monitoring wafer processing results, comprising:
a first mainframe of non-active chambers with a first plurality of feedthrough access ports, wherein each of the first plurality of feedthrough access ports is configured to interact with one of a first plurality of metrology apparatus, wherein each of the first plurality of feedthrough access ports has a surface exposed to an inner volume of a non-active chamber of the first mainframe that has a fluorine-based coating covering the surface, and wherein the non-active chamber of the first mainframe has a wafer access port to one or more other chambers of the first mainframe;
a second mainframe of non-active chambers with a second plurality of feedthrough access ports, wherein each of the second plurality of feedthrough access ports interacts with one of a second plurality of metrology apparatus, wherein each of the second plurality of feedthrough access ports has a surface exposed to an inner volume of the non-active chamber of the second mainframe that has a fluorine-based coating covering the surface, and wherein the non-active chamber of the second mainframe has a wafer access port to one or more other chambers of the second mainframe;
each of the first plurality of metrology apparatus and the second plurality of metrology apparatus are positioned external to the non-active chambers of the first mainframe and the second mainframe, respectively, and oriented to detect metrology data through one of the first plurality of feedthrough access ports and one of the second plurality of feedthrough access ports, respectively;
a multi-channel data collection apparatus connected to the first plurality of metrology apparatus and the second plurality of metrology apparatus and configured to continuously receive data from the first plurality of metrology apparatus of the first mainframe and receive data from the second plurality of metrology apparatus of the second mainframe, wherein the multi-channel data collection apparatus is configured to make first mainframe to second mainframe comparisons of data received from the first plurality of metrology apparatus and the second plurality of metrology apparatus;
a first cleaning apparatus connected to a first plurality of cleaning ports, wherein the first plurality of cleaning ports is positioned on a top or a bottom of the non-active chambers of the first mainframe, wherein each of the first plurality of cleaning ports is in proximity of one of the first plurality of metrology apparatus and wherein the first cleaning apparatus is configured to inject radicals from a remote plasma source into the non-active chambers of the first mainframe via at least one of the first plurality of cleaning ports to clean the fluorine-based coating covering the surface;
a second cleaning apparatus connected to a second plurality of cleaning ports, wherein the second plurality of cleaning ports is positioned on a top or a bottom of the non-active chambers of the second mainframe, wherein each of the second plurality of cleaning ports is in proximity of one of the second plurality of metrology apparatus and wherein the second cleaning apparatus is configured to inject radicals from a remote plasma source into the non-active chambers of the second mainframe via at least one of the second plurality of cleaning ports to clean the fluorine-based coating covering the surface; and
a metrology process apparatus interconnected with the first mainframe, the second mainframe, and the multi-channel data collection apparatus, the metrology process apparatus includes a trained metrology model that is configured to receive the data from the multi-channel data collection apparatus and configured to alter at least one wafer process of the first mainframe to improve a process of the second mainframe, different from the first mainframe, based on the data.
12 . The system of claim 11 , wherein the first cleaning apparatus and the second cleaning apparatus are configured to supply fluorine or oxygen gas-based radicals into the non-active chamber.
13 . The system of claim 11 , wherein the first cleaning apparatus and the second cleaning apparatus are interconnected to the multi-channel data collection apparatus and configured to perform cleaning when data from one or more of the first plurality of metrology apparatus or one or more of the second plurality of metrology apparatus is faulty.
14 . The system of claim 11 , wherein at least one of the first plurality of feedthrough access ports or at least one of the second plurality of feedthrough access ports is a viewport.
15 . The system of claim 14 , wherein the viewport is formed from a quartz material.
16 . The system of claim 11 , wherein the first plurality of metrology apparatus or the second plurality of metrology apparatus may include one or more of a reflectometer, an ellipsometer, and a micro-Raman spectroscopy device.
17 . The system of claim 11 , wherein the fluorine-based coating is a metal fluoride-based coating.
18 . The system of claim 11 , wherein the non-active chamber is a transfer chamber, a load lock chamber, or a via chamber.
19 . A method for monitoring wafer processing results, comprising:
continuously receiving data from a plurality of metrology apparatus connected to a non-active chamber via a feedthrough port into the non-active chamber, wherein the feedthrough port has a surface coated with a fluorine-based coating that is exposed to an inner volume of the non-active chamber;
cleaning the surface with the fluorine-based coating using radicals produced by a remote plasma source via at least one cleaning port with at least one internal nozzle within 6 cm or less of the feedthrough port of the non-active chamber, wherein the at least one cleaning port is positioned on a top or a bottom of the non-active chamber;
determining if wafer parameters are out of specification;
inputting the data into a trained machine learning model that determines actions to remediate a wafer process to bring an out of specification wafer parameter to within specification; and
sending a command to a process chamber to alter a process based on the actions determined by the trained machine learning model.
20 . The method of claim 19 , further comprising:
cleaning the surface with the fluorine-based coating using radicals produced by the remote plasma source when data from at least one of the plurality of metrology apparatus sends faulty data.