Method of manufacturing SOI wafer
View Patent ↗A SOI wafer is formed by forming a hole array on a surface of a wafer including a semiconductor material, forming a membrane-cavity structure by annealing process on the wafer, forming a buried oxide layer on an inside of the cavity and an outer oxide layer on an outside of the membrane, and forming a device layer by removing the outer oxide layer.
1 . A method of manufacturing a SOI (silicon-on-Insulator) wafer, the method comprising:
forming a hole array on a surface of a wafer including a semiconductor material;
forming a membrane-cavity structure by performing an annealing process on the wafer, the membrane-cavity structure including a cavity corresponding to the hole array and a membrane disposed on the cavity;
forming a buried oxide layer on an inside of the cavity and a first outer oxide layer on an outside of the membrane; and
forming a device layer by removing the first outer oxide layer,
wherein the hole array includes a plurality of holes,
wherein the cavity is formed by connecting the holes to each other while the annealing process is performed.
2 . The method of claim 1 , wherein the buried oxide layer and the first outer oxide layer are formed together.
3 . The method of claim 1 , wherein a thickness of the buried oxide layer is about 1.5 to 2.5 times a thickness of the cavity.
4 . The method of claim 1 , wherein
each of the holes has a preset diameter-to-depth ratio.
5 . The method of claim 4 , wherein a thickness of the cavity is set according to the diameter-to-depth ratio of the each of the holes.
6 . The method of claim 1 , further comprising:
forming an inlet connecting the cavity and an outside.
7 . The method of claim 6 , wherein the cavity and the inlet are formed together.
8 . The method of claim 7 , wherein the annealing process is performed in vacuum.
9 . The method of claim 6 , wherein the cavity and the inlet are formed separately.
10 . The method of claim 9 , wherein the annealing process is performed at atmospheric pressure.
11 . A method of manufacturing a SOI (silicon-on-Insulator) wafer, the method comprising:
forming a hole array on a surface of a wafer including a semiconductor material;
forming a membrane-cavity structure by performing an annealing process on the wafer, the membrane-cavity structure including a cavity corresponding to the hole array and a membrane disposed on the cavity;
forming a buried oxide layer on an inside of the cavity and a first outer oxide layer on an outside of the membrane; and
forming a device layer by removing the first outer oxide layer,
wherein the buried oxide layer includes:
a lower oxide layer formed on a lower portion of the cavity; and
an upper oxide layer formed on an upper portion of the cavity.
12 . The method of claim 11 , wherein the lower oxide layer is formed toward to the upper portion,
the upper oxide layer is formed toward to the lower portion, and
the buried oxide layer is formed while the lower oxide layer and the upper oxide layer contact each other.
13 . A method of manufacturing a SOI (silicon-on-Insulator) wafer, the method comprising:
forming a hole array on a surface of a wafer including a semiconductor material;
forming a membrane-cavity structure by performing an annealing process on the wafer, the membrane-cavity structure including a cavity corresponding to the hole array and a membrane disposed on the cavity;
forming a buried oxide layer on an inside of the cavity and a first outer oxide layer on an outside of the membrane;
forming a device layer by removing the first outer oxide layer; and
forming a second outer oxide layer on an outside of the membrane,
after forming the first outer oxide layer.
14 . The method of claim 13 , wherein the second outer oxide layer is removed together with the first outer oxide layer.
15 . The method of claim 13 , wherein a thickness of the device layer is less than or equal to a difference between a thickness of the membrane and a thickness of the cavity.
16 . The method of claim 13 , wherein a thickness of the device layer is set according to a thickness of the second outer oxide layer.
17 . A method of manufacturing a SOI (silicon-on-Insulator) wafer, the method comprising:
forming a hole array on a surface of a wafer including a semiconductor material;
forming a membrane-cavity structure by performing an annealing process on the wafer, the membrane-cavity structure including a cavity corresponding to the hole array, a membrane disposed on the cavity and a base layer disposed under the cavity;
forming a buried oxide layer on an inside of the cavity and a first outer oxide layer on an outside of the membrane;
forming a third outer oxide layer on an outside of the base layer; and
forming a device layer by removing the first outer oxide layer,
wherein the third outer oxide layer is formed together with the buried oxide layer and the first outer oxide layer.