Semiconductor device and method for producing the same

1 . A semiconductor device comprising:

a first insulating film;

a second insulating film disposed over an upper surface of the first insulating film;

a wiring disposed in the first insulating film,

wherein the wiring includes:

a first conductor containing copper;

a first film formed on a side surface and a bottom surface of the first conductor and containing cobalt;

a second film formed on an upper surface of the first conductor and containing copper and silicon; and

a third film formed on an upper surface of the first film and containing cobalt and silicon,

wherein respective positions of the second film and the third film are each lower than the upper surface of the first insulating film,

wherein the second insulating film is in contact with the second film and the third film,

wherein the wiring further includes a first barrier film formed between the first film and the first insulating film and between the third film and the first insulating film, and

wherein the barrier film is formed between the first insulating film and the second insulating film, and the second insulating film is in contact with the first barrier film.

2 . The semiconductor device according to claim 1 ,

wherein a first position of an upper surface of the second film is different from a second position of an upper surface of the third film.

3 . The semiconductor device according to claim 1 ,

wherein a first position of an upper surface of the second film is lower than a second position of an upper surface of the third film.

4 . The semiconductor device according to claim 1 ,

wherein the second insulating film is formed on each of the upper surface of the first insulating film, an upper surface of the second film and an upper surface of the third film, and containing silicon.

5 . The semiconductor device according to claim 1 ,

wherein the first insulating layer and the second insulating layer are composed of different material.

6 . The semiconductor device according to claim 5 ,

wherein the first insulating film includes silicon and oxygen, and second insulating film includes silicon and nitrogen.

7 . A semiconductor device comprising:

a first insulating film;

a second insulting film disposed over an upper surface of the first insulating film; and

a wiring disposed in the first insulating film,

wherein the wiring includes:

a first conductor containing copper;

a first film formed on a side surface and a bottom surface of the first conductor and containing cobalt and nitrogen, and

wherein a first position of respective upper surfaces of the first conductor and the first film is lower than a second position of an upper surface of the first insulating film;

wherein the second insulating film is in contact with the first conductor and the first film;

wherein the wiring further includes a barrier film formed between the first film and the first insulating film; and

wherein the barrier film is formed between the first insulating film and the second insulating film, and the second insulating film is in contact with the first barrier film.

8 . The semiconductor device according to claim 7 ,

wherein the first film contains cobalt nitride.

9 . The semiconductor device according to claim 7 ,

wherein the first insulating layer and the second insulating layer are composed of different material.

10 . The semiconductor device according to claim 9 ,

wherein the first insulating film includes silicon and oxygen, and second insulating film includes silicon and nitrogen.

11 . A method for fabricating a semiconductor device, comprising:

forming a recess in a first insulating film;

forming a first film containing cobalt along an internal surface and on a bottom surface of the recess;

forming, in the recess, a first conductor containing copper;

processing an upper surface of the first insulating film, an upper surface of the first film, and an upper surface of the first conductor;

forming a material film containing silicon on the upper surface of the first insulating film, the upper surface of the first film, and the upper surface of the first conductor;

forming a second film containing copper and silicon on the upper surface of the first conductor and forming a third film containing cobalt and silicon on the upper surface of the first film by diffusing copper of the first conductor and cobalt of the first film into the material film; and

removing the material film.

12 . The method for fabricating a semiconductor device according to claim 11 ,

wherein the respective upper surfaces of the first conductor and the first film are lower than the upper surface of the first insulating film.

13 . The method for fabricating a semiconductor device according to claim 11 , wherein the step of diffusing copper of the first conductor and cobalt of the first film into the material film comprises performing an annealing process with a temperature equal to or lower than about 300° C.

14 . A semiconductor device comprising:

a first insulating film;

a second insulating film disposed over an upper surface of the first insulating film;

a wiring disposed in the first insulating film,

wherein the wiring includes:

a first conductor containing copper;

a first film formed on a side surface and a bottom surface of the first conductor and containing cobalt;

a second film formed on an upper surface of the first conductor and containing copper and silicon; and

a third film formed on an upper surface of the first film and containing cobalt and silicon,

wherein respective positions of the second film and the third film are each lower than the upper surface of the first insulating film,

wherein the second insulating film is in contact with the second film and the third film, and

wherein a first position of an upper surface of the second film is lower than a second position of an upper surface of the third film.