Local frontside power rail with global backside power delivery
A method for forming a semiconductor device includes forming a front side of the semiconductor device, the front side comprising a metal wire M2, and a plurality of power rails coupled to the M2. Further, the method includes forming a through silicon via (TSV) from a back side of the semiconductor device to the front side, the TSV connecting a first power rail of the front side with a metal wire M1 on the back side. Further, the method includes forming a power delivery network on the back side, the TSV providing power from the power delivery network to the front side.
1 . A semiconductor device comprising:
a front side comprising a metal wire M2, and a plurality of power rails coupled to the M2, the plurality of power rails comprising the first power rail and a second power rail, the first power rail being wider than the second power rail;
a back side comprising a metal wire M1 and a power delivery network; and
a through silicon via (TSV) connecting a first power rail from the plurality of power rails of the front side with the M1 on the back side, the TSV physically contacting the first power rail, the TSV providing power from the power delivery network to the front side.
2 . The semiconductor device of claim 1 , wherein a first set of power rails from the plurality of power rails is electrically connected directly to a device region of the front side.
3 . The semiconductor device of claim 1 , wherein, the first power rail and the second power rail are connected at the metal wire M2.
4 . The semiconductor device of claim 3 , wherein the first power rail is a power supply (VDD).
5 . The semiconductor device of claim 3 , wherein the first power rail comprises a pair of adjacent power rails from the plurality of power rails.
6 . The semiconductor device of claim 1 , wherein the plurality of power rails comprises power supply (VDD) and ground (VSS) terminals.
7 . The semiconductor device of claim 1 , wherein the metal wire M2 is discontinuous.
8 . The semiconductor device of claim 3 , wherein the first power rail is adjacent to narrower power rails on either side.
9 . The semiconductor device of claim 8 , wherein two wider power rails are not adjacent to each other and are separated by at least one narrower power rail.
10 . The semiconductor device of claim 9 , wherein circuit rows are placed between two successive wider power rails without interruption by a tap cell.
11 . The semiconductor device of claim 3 , wherein the first power rail is used to establish a physical connection with the TSV, and wherein the TSV physically contacts the first power rail.
12 . The semiconductor device of claim 11 , wherein the physical connection between the TSV and the first power rail constitutes a tap cell.
13 . The semiconductor device of claim 11 , wherein a first level of backside wiring has the same pitch as the first power rail.
14 . The semiconductor device of claim 13 , wherein the TSV is on the order of 100 nm wide.
15 . The semiconductor device of claim 1 , wherein two or more adjacent power rails are connected to each other by a landing pad formed of a conductive material, the landing pad being wider than the power rails, and wherein the TSV connects to the landing pad.
16 . An electronic device comprising:
a semiconductor device comprising a front side comprising a plurality of power rails, wherein the power rails comprise two types of power rails, a first type of power rails that is wider than a second type of power rails and two power rails of the first type are not adjacent to each other and are separated by at least one power rail of the second type.
17 . The electronic device of claim 16 , wherein the front side further comprises a metal wire M2, wherein the power rails are coupled with the metal wire M2.
18 . The electronic device of claim 16 , wherein the semiconductor device further comprises a back side comprising a metal wire M1 and a power delivery network.
19 . The electronic device of claim 18 , wherein the semiconductor device further comprises a through silicon via (TSV) connecting a first type of power rail of the front side with to the metal wire M1 on the back side, the TSV physically contacting the first type of power rail.
20 . The electronic device of claim 19 , wherein the TSV provides power from the power delivery network to the front side.
21 . The electronic device of claim 17 , wherein the metal wire M2 is discontinuous.