Interconnect through gate cut for stacked FET device
A microelectronic structure including a stacked device region, where stacked device region is comprised of a plurality of top devices and a plurality of bottom devices. Each of the plurality of top devices includes at least one top source/drain. Each of the plurality of bottom devices includes at least one bottom source/drain. A gate cut region located adjacent to the stacked region and an interconnect located in the gate cut region. The interconnect is connected to at least two different devices located in the stacked device region.
1 . A microelectronic device comprising:
a stacked device region, wherein the stacked device region is comprised of a plurality of top devices and a plurality of bottom devices, wherein the plurality of top devices are located on different vertical levels than the plurality of bottom devices, wherein each of the plurality of top devices includes at least one top source/drain, and wherein each of the plurality of bottom devices includes at least one bottom source/drain;
a gate cut region located adjacent to the stacked region and extends parallel to the stacked device region; and
an interconnect located in the gate cut region, wherein the interconnect is connected to at least two different devices that are located laterally adjacent in the stacked device region.
2 . The microelectronic device of claim 1 , wherein the at least two different devices connected to the interconnected are a first bottom source/drain and a second bottom source/drain.
3 . The microelectronic device of claim 2 , where the first bottom source/drain and the second bottom source/drain are adjacent to each other.
4 . The microelectronic device of claim 2 , further comprising at least one bottom source/drain located between the first bottom source/drain and the second bottom source/drain.
5 . The microelectronic device of claim 1 , wherein the at least two different devices connected to the interconnected are a first upper source/drain and a second upper source/drain.
6 . The microelectronic device of claim 5 , where the first upper source/drain and the second upper source/drain are adjacent to each other.
7 . The microelectronic device of claim 5 , further comprising at least one upper source/drain located between the first upper source/drain and the second upper source/drain.
8 . The microelectronic device of claim 1 , wherein the at least two different devices connected to the interconnected are a first bottom source/drain and a first upper source/drain.
9 . The microelectronic device of claim 8 , where the first bottom source/drain and the first bottom source/drain are adjacent to each other.
10 . The microelectronic device of claim 8 , further comprising at least one bottom source/drain located between a location of the first bottom source/drain and a location of the first upper source/drain.
11 . A microelectronic device comprising:
a first stacked device region, wherein the first stacked device region is comprised of a plurality of first top devices and a first plurality of bottom devices, wherein the plurality of first top devices are located on different vertical levels than the first plurality of bottom devices, wherein each of the plurality of first top devices includes at least one first top source/drain, and wherein each of the plurality of first bottom devices includes at least one first bottom source/drain;
a second stacked device region, wherein the second stacked device region is comprised of a plurality of second top devices and a second plurality of bottom devices, wherein the plurality of second top devices are located on different vertical levels than the second plurality of bottom devices wherein each of the plurality of second top devices includes at least one second top source/drain, and wherein each of the second plurality of bottom devices includes at least one second bottom source/drain;
a gate cut region located between the first stacked device region and the second stacked device region, wherein the gate cut region extends parallel to the first stacked device region and the second stacked device region; and
an interconnect located in the gate cut region, wherein the interconnect is connected to at least devices located in the first stacked device region and at least one device located in the second stacked device region.
12 . The microelectronic device of claim 11 , wherein the at least one device located in the first stacked device region is a first bottom source/drain and the at least one device located in the second stacked device region a second bottom source/drain.
13 . The microelectronic device of claim 11 , wherein the at least one device located in the first stacked device region is a first upper source/drain and the at least one device located in the second stacked device region a second bottom source/drain.
14 . The microelectronic device of claim 11 , wherein the at least one device located in the first stacked device region is a first upper source/drain and the at least one device located in the second stacked device region a second upper source/drain.
15 . The microelectronic device of claim 11 , wherein the interconnected is connected to a plurality of devices located in the first stacked device region and a plurality of devices located in the second stacked device region.
16 . The microelectronic device of claim 15 , wherein the plurality of devices located in the first stacked device region includes at least first bottom source/drain and at least one first upper source/drain.
17 . The microelectronic device of claim 16 , wherein the plurality of devices located in the second stacked device region includes at least second bottom source/drain and at least one second upper source/drain.
18 . A method comprising:
forming a first stacked device region, wherein the first stacked device region is comprised of a plurality of first top devices and a first plurality of bottom devices, wherein each of the plurality of first top devices includes at least one first top source/drain, and wherein each of the plurality of first bottom devices includes at least one first bottom source/drain;
forming a second stacked device region, wherein the second stacked device region is comprised of a plurality of second top devices and a second plurality of bottom devices, wherein each of the plurality of second top devices includes at least one second top source/drain, and wherein each of the plurality of second bottom devices includes at least one second bottom source/drain;
forming a gate cut region located between the first stacked device region and the second stacked device region, wherein the gate cut region extends parallel to the first stacked device region and the second stacked device region; and
forming an interconnect located in the gate cut region, wherein the interconnect is connected to at least two different source/drains.
19 . The method of claim 18 , wherein the interconnect connects at least two different source/drains located in the first stacked device region.
20 . The method of claim 18 , wherein the interconnect connects one source/drain located in the first stacked device region and one source/drain located in the second stacked device region.