Interconnection structure and method for manufacturing the same
An interconnection structure and a method of manufacturing an interconnection structure are provided. The interconnection structure includes a first dielectric layer, a second dielectric layer disposed on the first dielectric layer, and a first conductive layer disposed in the first dielectric layer. The interconnection structure also includes a conductive via electrically connected with the first conductive layer and extending through the first dielectric layer and the second dielectric layer. The conductive via has a first lateral surface surrounded by the first dielectric layer and a second lateral surface surrounded by the second dielectric layer. The first lateral surface and the second lateral surface have different slopes.
1 . An interconnection structure, comprising:
a first dielectric layer having a top surface and a first protruding portion protruding therefrom;
a second dielectric layer disposed on the top surface of the first dielectric layer, wherein the first protruding portion of the first dielectric layer is extended into the second dielectric layer;
a first conductive layer disposed in the first dielectric layer at a position that the first protruding portion of the first dielectric layer is disposed above the first conductive layer; and
a conductive via electrically connected with the first conductive layer and extending through the first dielectric layer and the second dielectric layer;
wherein the conductive via has a first lateral surface surrounded by the first dielectric layer and a second lateral surface surrounded by the second dielectric layer, the first lateral surface and the second lateral surface having different slopes;
wherein the first lateral surface of the conductive via is extended from the first conductive layer to the top surface of the first dielectric layer at the first protruding portion thereof;
wherein the second lateral surface of the conductive via is extended from the top surface of the first dielectric layer at the first protruding portion thereof through the second dielectric layer.
2 . The interconnection structure of claim 1 , wherein a width of an interface between the first conductive layer and the conductive via is the smallest width of the first conductive via.
3 . The interconnection structure of claim 2 , wherein the width of the interface is less than about 50.0 nanometers (nm).
4 . The interconnection structure of claim 2 , wherein the conductive via comprises a top surface, and a width of the top surface is greater than 2.5 times of the width of the interface.
5 . The interconnection structure of claim 4 , wherein the width of the top surface is the greatest width of the conductive via.
6 . The interconnection structure of claim 4 , wherein the width of the top surface is between about 120.0 nm and about 125.0 nm.
7 . The interconnection structure of claim 4 , further comprising:
a third dielectric layer disposed on the second dielectric layer, wherein the top surface of the conductive via is exposed from and coplanar with a top surface of the third dielectric layer.
8 . The interconnection structure of claim 1 , wherein the first dielectric layer and the second dielectric layer have different etching rates with respect to an etchant.
9 . The interconnection structure of claim 1 , wherein the first conductive layer is partially covered by the first dielectric layer, wherein a width of the first protruding portion of the first dielectric layer is conformal to a contour of the first conductive layer.
10 . The interconnection structure of claim 1 , further comprising:
a second conductive layer disposed in the first dielectric layer and spaced apart from the first conductive layer.
11 . The interconnection structure of claim 10 , wherein the first dielectric layer comprises a second protruding portion over the second conductive layer protruding into the second dielectric layer, wherein the first protruding portion and the second protruding portion are spaced apart from each other and are alignedly disposed over the first conductive layer and the second conductive layer respectively.
12 . The interconnection structure of claim 1 , wherein the conductive via further comprises a third lateral surface connected between the first and second lateral surfaces of the conductive via, and wherein the first lateral surface, the second lateral surface, and the third lateral surface have different slopes.
13 . The interconnection structure of claim 1 , wherein an electrical resistance of the conductive via is between 65.0 ohms and 70.0 ohms.
14 . The interconnection structure of claim 1 , wherein the conductive via comprises a barrier layer directly contacting the first dielectric layer and the second dielectric layer.
15 . The interconnection structure of claim 1 , wherein the conductive via further has a third lateral surface extended between the first lateral surface and the second lateral surface and defines a corner between the first lateral surface and the third lateral surface, wherein the corner is filled with the second dielectric layer.
16 . The interconnection structure of claim 15 , wherein the third lateral surface of the conductive via is parallel to a bottom surface of the conductive via.