Semiconductor devices including an air gap adjacent to an interconnect structure and methods of forming the same
A semiconductor device may include a first interlayer dielectric (ILD) over a substrate and a second ILD over the first ILD. An interconnect structure may be in the first ILD and the second ILD. The interconnect structure includes a conductive line on a via portion. An air gap may be arranged below the conductive line and between the via portion and the second ILD. The air gap may be defined by a sidewall of the via portion and a sidewall of the second ILD.
1 . A semiconductor device comprising:
a first interlayer dielectric (ILD) over a substrate and a second ILD over the first ILD;
an interconnect structure in the first ILD and the second ILD, wherein the interconnect structure comprises a conductive line on a via portion; and
an air gap arranged below the conductive line and between the via portion and the second ILD, wherein the air gap is defined by a sidewall of the via portion and a sidewall of the second ILD, and a bottom surface of the conductive line and a top surface of the first ILD, wherein the air gap further underlaps a portion of the second ILD, and the air gap is further defined by a surface of the second ILD opposite to the top surface of the first ILD.
2 . The device of claim 1 , wherein the air gap extends from the sidewall of the via portion to the sidewall of the second ILD and from the bottom surface of the conductive line to the top surface of the first ILD.
3 . The device of claim 1 , wherein the bottom surface of the conductive line and the surface of the second ILD are substantially coplanar.
4 . The device of claim 1 , wherein the air gap completely surrounds the via portion.
5 . The device of claim 1 , wherein the sidewall of the second ILD is substantially parallel to the sidewall of the via portion.
6 . The device of claim 1 , wherein the air gap is arranged within the second ILD and on the first ILD.
7 . The device of claim 6 , wherein the via portion extends through the first ILD.
8 . The device of claim 1 , further comprising an electronic component on the substrate, wherein the interconnect structure and the air gap is arranged laterally adjacent to the electronic component.
9 . The device of claim 8 , further comprising a second interconnect structure and a second air gap adjacent to the second interconnect structure, wherein the electronic component is arranged between the interconnect structure and the second interconnect structure.
10 . A semiconductor device comprising:
an interlayer dielectric (ILD) over a substrate;
an interconnect structure in the ILD, wherein the interconnect structure comprises a conductive line on a via portion; and
an air gap arranged around the via portion and below the conductive line, wherein the air gap is enclosed by the ILD, wherein the air gap underlaps a portion of the ILD, and a bottom surface of the conductive line and a surface of the ILD are substantially coplanar.
11 . The device of claim 10 , wherein sidewalls of the via portion and a portion of the bottom surface of the conductive line is exposed to the air gap.
12 . A method of forming a semiconductor device, comprising:
forming an interlayer dielectric (ILD) over a substrate, wherein the ILD is formed over a second ILD over the substrate;
forming an interconnect structure in the ILD, wherein the interconnect structure comprises a conductive line on a via portion; and
forming an air gap around the via portion and below the conductive line, wherein the air gap is enclosed by the ILD and the second ILD, the air gap is defined by a sidewall of the via portion and a sidewall of the ILD, and a bottom surface of the conductive line and a top surface of the second ILD, wherein the air gap further underlaps a portion of the ILD, and the air gap is further defined by a surface of the ILD opposite to the top surface of the second ILD.
13 . The method of claim 12 , wherein the bottom surface of the conductive line and the surface of the ILD are substantially coplanar.
14 . The method of claim 12 , wherein forming the interconnect structure comprises:
forming a sacrificial via over the substrate;
forming a sacrificial layer on sidewalls of the sacrificial via;
replacing the sacrificial via with the via portion of the interconnect; and
forming the conductive line over the via portion and the sacrificial layer.
15 . The method of claim 14 , wherein forming the air gap comprises removing the sacrificial layer from the ILD, leaving a void in a region previously occupied by the sacrificial layer.
16 . The method of claim 15 , wherein the sacrificial layer comprises a thermally degradable material, and removing the sacrificial layer comprises performing a thermal treatment at a predetermined temperature to decompose the thermally degradable material.