Dummy metal-insulator-metal structures within vias

1 . A metal-insulator-metal (MIM) capacitor structure comprising:

a capacitor bottom metal layer;

a first dielectric layer over the capacitor bottom metal layer;

a capacitor middle metal layer over the first dielectric layer;

a second dielectric layer over the capacitor middle metal layer;

a capacitor top metal layer over the second dielectric layer; and

a metal via array connected to the capacitor top metal layer and the capacitor bottom metal layer, wherein the metal via array has a first metal via and a second metal via, each of the first metal via and the second metal via is connected to both the capacitor top metal layer and the capacitor bottom metal layer, and a portion of the capacitor top metal layer covers an area of the second dielectric layer that extends from the first metal via to the second metal via, wherein the portion of the capacitor top metal layer abuts both the first metal via and the second metal via.

2 . The MIM capacitor structure of claim 1 , wherein, from a top view, the portion of the capacitor top metal layer surrounds the first metal via and the second metal via.

3 . The MIM capacitor structure of claim 1 , wherein the capacitor top metal layer is a first capacitor top metal layer and the MIM capacitor structure further comprises:

a second capacitor top metal layer over the second dielectric layer; and

a third dielectric layer over the second capacitor top metal layer, wherein the first capacitor top metal layer is over the second capacitor top metal layer and the third dielectric layer is between the second capacitor top metal layer and the first capacitor top metal layer.

4 . The MIM capacitor structure of claim 3 , wherein:

a portion of the second capacitor top metal layer covers the area of the second dielectric layer that extends from the first metal via to the second metal via; and

the portion of the first capacitor top metal layer covers an area of the third dielectric layer that extends from the first metal via to the second metal via.

5 . The MIM capacitor structure of claim 3 , wherein:

a portion of the second capacitor top metal layer covers a portion of the area of the second dielectric layer that extends from the first metal via to the second metal via; and

the portion of the first capacitor top metal layer covers an area of the third dielectric layer that extends from the first metal via to the second metal via.

6 . The MIM capacitor structure of claim 1 , wherein:

the metal via array further includes a third metal via;

the first metal via, the second metal via, and the third metal via are arranged to provide a one by three metal via array; and

the capacitor top metal layer covers an area of the second dielectric layer that extends from the second metal via to the third metal via.

7 . The MIM capacitor structure of claim 1 , wherein the metal via array is a two by three metal via array and the capacitor top metal layer covers areas of the second dielectric layer that extends between adjacent metal vias of the two by three metal via array.

8 . The MIM capacitor structure of claim 1 , wherein the metal via array is a first metal via array, the MIM capacitor structure further comprising a second metal via array connected to the capacitor middle metal layer.

9 . A metal-insulator-metal (MIM) capacitor structure comprising:

a first conductor layer;

a first insulator layer over the first conductor layer;

a second conductor layer over the first insulator layer;

a second insulator layer over the second conductor layer;

a third conductor layer over the second insulator layer; and

a via array connected to the first conductor layer and the third conductor layer, wherein the via array has a first via and a second via and a portion of the third conductor layer extends from the first via to the second via without interruption, such that the portion of the third conductor layer covers an entire area of the second insulator layer between and extending from the first via to the second via, and further wherein both the first via and the second via extend from above the third conductor layer to below the first conductor layer.

10 . The MIM capacitor structure of claim 9 , wherein each of the first insulator layer and the second insulator layer includes an aluminum oxide layer disposed between a first zirconium oxide layer and a second zirconium oxide layer.

11 . The MIM capacitor structure of claim 9 , further comprising:

a third insulator layer over the third conductor layer;

a fourth conductor layer over the third insulator layer; and

wherein a portion of the fourth conductor layer covers an area of the third insulator layer that extends from the first via to the second via.

12 . The MIM capacitor structure of claim 11 , wherein the first via and the second via extend through the fourth conductor layer and the third conductor layer.

13 . The MIM capacitor structure of claim 9 , wherein the first via and the second via extend through the first conductor layer and the third conductor layer.

14 . The MIM capacitor structure of claim 9 , further comprising a fourth conductor layer disposed between the third conductor layer and the first conductor layer, wherein the via array is connected to the fourth conductor layer and the fourth conductor layer does not cover the area of the second insulator layer that extends from the first via to the second via.

15 . The MIM capacitor structure of claim 9 , wherein:

the via array further includes a third via; and

another portion of the third conductor layer covers an area of the second insulator layer that extends from the second via to the third via.

16 . The MIM capacitor structure of claim 9 , wherein the via array is a first via array, the MIM capacitor structure further comprising a second via array connected to the second conductor layer.

17 . A metal-insulator-metal (MIM) capacitor structure comprising:

a capacitor bottom metal layer;

a first dielectric layer over the capacitor bottom metal layer;

a capacitor middle metal layer over the first dielectric layer;

a second dielectric layer over the capacitor middle metal layer;

a capacitor top metal layer over the second dielectric layer; and

a metal via array connected to the capacitor top metal layer and the capacitor bottom metal layer, wherein:

the metal via array has a first metal via and a second metal via that extend through the capacitor top metal layer, the second dielectric layer, the first dielectric layer, and the capacitor bottom metal layer, and

a portion of the capacitor top metal layer extends from the first metal via to the second metal via, such that the portion of the capacitor top metal layer covers an entire area of a portion of the second dielectric layer between and extending from the first metal via to the second metal via.

18 . The MIM capacitor structure of claim 17 , wherein the capacitor top metal layer is a first capacitor top metal layer and the MIM capacitor structure further includes:

a third dielectric layer disposed over the first capacitor top metal layer;

a second capacitor top metal layer disposed over the third dielectric layer;

wherein the first metal via and the second metal via extend through the second capacitor top metal layer and the third dielectric layer; and

wherein a portion of the second capacitor top metal layer covers an area of the third dielectric layer that extends from the first metal via to the second metal via.

19 . The MIM capacitor structure of claim 17 , wherein the capacitor top metal layer is a first capacitor top metal layer and the MIM capacitor structure further includes:

a second capacitor top metal layer disposed over the second dielectric layer;

a third dielectric layer disposed over the second capacitor top metal layer, wherein the first capacitor top metal layer is disposed over the third dielectric layer;

wherein the first metal via and the second metal via extend through the second capacitor top metal layer and the third dielectric layer; and

wherein the first capacitor top metal layer covers an area of the third dielectric layer that extends from the first metal via to the second metal via.

20 . The MIM capacitor structure of claim 19 , wherein the third dielectric layer and the first capacitor top metal layer wrap corners of the second capacitor top metal layer.