Semiconductor device and manufacturing method therefor
The disclosure provides manufacturing methods and semiconductor devices. One example method includes that a semiconductor device includes a substrate and an inductor, where a shield layer is formed between the substrate and the inductor, and the shield layer is used to shield an electrical coupling between the substrate and the inductor.
1 . A semiconductor device, comprising:
a substrate and an inductor, wherein
a shield layer is formed between the substrate and the inductor, and wherein the shield layer has a first end that connects to the inductor and the shield layer has a second end that connects to the substrate, and the shield layer shields an electrical coupling between the substrate and the inductor, wherein the shield layer is grounded by using conductive through holes that pass through the substrate that is connected to the shield layer through the second end, and wherein one end of the inductor is connected to an upper electrode plate of a first capacitor and another end of the inductor is connected to an upper electrode plate of a second capacitor, and the first capacitor and the second capacitor have a common grounded lower electrode plate.
2 . The semiconductor device according to claim 1 , wherein the shield layer is another functional layer in the semiconductor device.
3 . The semiconductor device according to claim 2 , wherein the shield layer is a capacitor.
4 . The semiconductor device according to claim 3 , wherein the capacitor has a first electrode plate and a second electrode plate, the second electrode plate is grounded by using conductive through holes, and an area of the second electrode plate is larger than an area of the first electrode plate.
5 . The semiconductor device according to claim 1 , wherein in the substrate, a doping density of a region directly facing the inductor is lower than a doping density of another region.
6 . The semiconductor device according to claim 1 , wherein in the substrate, a thickness of a region directly facing the inductor is less than a thickness of another region.
7 . The semiconductor device according to claim 1 , wherein the inductor is a bonding wire connecting a signal input end and a signal output end, or a conductor layer connecting the signal input end and the signal output end.
8 . A radio frequency integrated circuit, comprising:
a substrate and an inductor, wherein
a shield layer is formed between the substrate and the inductor, and wherein the shield layer has a first end that connects to the inductor and the shield layer has a second end that connects to the substrate, and the shield layer shields an electrical coupling between the substrate and the inductor, wherein the shield layer is grounded by using conductive through holes that pass through the substrate that is connected to the shield layer through the second end, and wherein one end of the inductor is connected to an upper electrode plate of a first capacitor and another end of the inductor is connected to an upper electrode plate of a second capacitor, and the first capacitor and the second capacitor have a common grounded lower electrode plate.
9 . The radio frequency integrated circuit according to claim 8 , wherein the shield layer is a capacitor.
10 . The radio frequency integrated circuit according to claim 9 , wherein the capacitor has a first electrode plate and a second electrode plate, the second electrode plate is grounded by using conductive through holes, and an area of the second electrode plate is larger than an area of the first electrode plate.
11 . The radio frequency integrated circuit according to claim 8 , wherein in the substrate, a doping density of a region directly facing the inductor is lower than a doping density of another region.