Semiconductor device and manufacturing method of semiconductor device
A semiconductor device includes a semiconductor substrate having a surface with a metal wiring on the surface, an insulating film that covers the surface of the semiconductor substrate, and a plurality of electrodes disposed on the insulating film and having mutually same planar shapes. The insulating film has a plurality of opening portions formed to face respective bottom surfaces of the plurality of electrodes and expose the metal wiring. The plurality of opening portions includes a first opening portion having a first planar configuration and a second opening portion having a second planar configuration different from the first planar configuration.
1 . A semiconductor device comprising:
a semiconductor substrate having a surface provided with a metal wiring;
an insulating film that covers the surface of the semiconductor substrate; and
a plurality of electrodes disposed on the insulating film and having mutually same planar shapes, wherein
the insulating film has a plurality of opening portions formed to face respective bottom surfaces of the plurality of electrodes and expose the metal wiring,
the plurality of opening portions include a first opening portion having a first planar configuration and a second opening portion having a second planar configuration different from the first planar configuration,
the plurality of electrodes are arranged along one direction,
an opening constituting the second opening portion has a larger width in another direction intersecting the one direction than an opening constituting the first opening portion,
the metal wiring has a first wiring width in the other direction corresponding to a size of the first opening portion in a region where the first opening portion is formed and a second wiring width in the other direction corresponding to a size of the second opening portion in a region where the second opening portion is formed.
2 . The semiconductor device according to claim 1 , wherein
the plurality of electrodes are arranged on the insulating film in a predetermined repeated pattern, and
the insulating film has at least one of the second opening portion for each region including a group of electrodes included in the predetermined repeated pattern among the plurality of electrodes.
3 . The semiconductor device according to claim 1 , wherein
the second opening portion is an opening portion for recognition for alignment of an inspection device that inspects the surface of the semiconductor substrate, and
at least one of the second opening portion is formed for each region corresponding to a field of view of the inspection device.
4 . The semiconductor device according to claim 1 , wherein
the first opening portion is constituted by a first number of openings, and the second opening portion is constituted by a second number of openings, the first number and the second number being different from each other.
5 . The semiconductor device according to claim 1 , wherein
the first opening portion is constituted by at least one opening of a first planar shape, and the second opening portion is constituted by at least one opening of a second planar shape different from the first planar shape.
6 . The semiconductor device according to claim 1 , wherein
the second opening portion is an opening portion for recognition provided for performing alignment by an inspection device that inspects a surface of the semiconductor substrate, and at least one of the second opening portion is formed for each region corresponding to a field of view of the inspection device,
a wiring portion having the second wiring width of the metal wiring is an opening-portion-for-recognition connecting wire portion provided to form the opening portion for recognition.
7 . The semiconductor device according to claim 1 , wherein
the second opening portion has a shape including a first straight portion formed on a portion of the metal wiring having the first wiring width and extending along a wiring direction of the metal wiring and a second straight portion protruding from the first straight portion and extending up to on a portion of the metal wiring having the second wiring width.