IP Library Granted Patent US 12685183
Granted Patent B2
US 12685183 · App. 18/371,256 · Granted Jul 14, 2026

Method for manufacturing wiring board

Inventors: Yuki Umemura (Tokyo, JP); Takehisa Takada (Tokyo, JP); Tomoyuki Ishii (Tokyo, JP)
Assignee: TOPPAN INC.
H10W70/095H05K1/0266H05K1/0306H05K1/115H05K1/181H05K3/0026H05K3/4038H10D1/68H10W46/00H10W70/635H10W70/685H05K2203/107H10W46/301
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Quick Facts
Patent No.
US 12685183
App. No.
18/371,256
Granted
Jul 14, 2026
Kind
B2
Abstract

A method for manufacturing a wiring board, including a step A of forming a laser-modified portion in a glass substrate by applying laser light to the glass substrate from a first surface to an opposite surface of the glass substrate; a step B of forming a first surface wiring layer including a MIM capacitor on the first surface of the glass substrate; a step C of performing an etching process on a surface of the glass substrate opposite to the first surface to form a through via in the laser-modified portion and form a second surface of the glass substrate opposite to the first surface; and a step D of forming a through electrode in the through via and forming, on the second surface, a second surface wiring layer that is connected to the first surface wiring layer via the through electrode.

Claims (10)

1 . A method for manufacturing a wiring board, the method comprising:

applying laser light to a glass substrate from a first surface to an opposite surface of the glass substrate to form a laser-modified portion in the glass substrate, the laser-modified portion extends from the first surface of the glass substrate towards to the opposite surface of the glass substrate perpendicular to the first surface of the glass substrate, the applying further comprises increasing an intensity of the laser light to deform the first surface of the glass substrate into a protrusion or a recess;

forming a first surface wiring layer including a metal-insulator-metal (MIM) capacitor on the first surface of the glass substrate, the MIM capacitor comprises an upper electrode, a lower electrode being closer to the first surface of the glass substrate than the upper electrode and a dielectric film between the upper electrode and the lower electrode, the forming the first surface wiring layer comprises positioning the lower electrode of the MIM capacitor on the first surface of the glass substrate using the protrusion or the recess as a visible alignment mark;

performing an etching process on the opposite surface of the glass substrate to form a through via in the laser-modified portion and form a second surface of the glass substrate opposite to the first surface; and

forming a through electrode in the through via and forming, on the second surface, a second surface wiring layer that is connected to the first surface wiring layer via the through electrode.

2 . The method of claim 1 , wherein further comprising

bonding a carrier to the first surface wiring layer before said performing the etching process.

3 . The method for manufacturing a wiring board of claim 1 , wherein

the through via decreases in diameter from the second surface toward the first surface.

4 . The method of claim 1 , wherein said performing the etching process comprises using a hydrofluoric acid.