Semiconductor device with leadframe spacer and method therefor

1 . A method comprising:

affixing a spacer structure to a bottom side of a plurality of leads of a leadframe;

attaching a semiconductor die to a top side of a die pad of the leadframe; and

encapsulating with an encapsulant the semiconductor die, the leadframe, and the spacer structure, portions of the spacer structure and portions of the leads of the plurality of leads exposed at a bottom side of the encapsulant;

wherein each lead of the plurality of leads includes an outer portion at a first end of the lead proximate to an outer perimeter of the leadframe and an inner portion extending from the outer portion to a second end of the lead proximate to the die pad;

wherein the spacer structure includes a ring portion and a plurality of finger portions, each finger portion attached to a corresponding lead of the plurality of leads, the ring portion is positioned proximate to outer portions of the leads of the plurality of leads and the finger portions are positioned proximate to the second ends of the leads of the plurality of leads.

2 . The method of claim 1 , wherein the outer portion having a first thickness and the inner portion having a second thickness less than the first thickness.

3 . The method of claim 2 , wherein affixing the spacer structure to the plurality of leads includes attaching the spacer structure to the inner portion of the leads of the plurality by way of an adhesive.

4 . The method of claim 2 , wherein after affixing the spacer structure to the plurality of leads, a bottom surface of the outer portion of the leads of the plurality and a bottom surface of the spacer structure are substantially coplanar.

5 . The method of claim 2 , wherein the inner portion of each lead of the plurality of leads is etched to form the second thickness.

6 . The method of claim 1 , further comprising connecting a bond pad on the semiconductor die with a first lead of the plurality of leads by way of a bond wire before encapsulating with the encapsulant.

7 . The method of claim 6 , wherein the spacer structure is configured to support the first lead while connecting the bond pad with the first lead of the plurality of leads by way of the bond wire.

8 . The method of claim 1 , wherein the spacer structure is formed from a non-conductive, substantially rigid material.

9 . A semiconductor device comprising:

a leadframe including a plurality of leads and a die pad, each lead of the plurality of leads having full thickness portion and a reduced thickness portion, wherein the full thickness portion is formed at a first end of the lead proximate to an outer perimeter of the leadframe and the reduced thickness portion extends from the full thickness portion to a second end of the lead proximate to the die pad;

a spacer structure affixed to the reduced thickness portions of the plurality of leads;

a semiconductor die attached to the die pad; and

an encapsulant encapsulating the semiconductor die, the plurality of leads, and the spacer structure;

wherein the spacer structure includes a ring portion and a plurality of finger portions, each finger portion attached to the reduced thickness portion of a corresponding lead of the plurality of leads, the ring portion is positioned proximate to the full thickness portions of the leads of the plurality of leads and the finger portions are positioned proximate to the second ends of the leads of the plurality of leads.

10 . The semiconductor device of claim 9 , wherein the reduced thickness portion of each lead of the plurality of leads is characterized as a half-etched portion, a bottom surface of the full thickness portion not coplanar with a bottom surface of the reduced thickness portion.

11 . The semiconductor device of claim 9 , further comprising an adhesive material disposed between the spacer structure and the reduced thickness portions of the plurality of leads.

12 . The semiconductor device of claim 9 , wherein a bottom surface of the full thickness portion of the leads of the plurality and a bottom surface of the spacer structure are substantially coplanar.

13 . A semiconductor device comprising:

a leadframe including a plurality of leads substantially surrounding a die pad, each lead of the plurality of leads having full thickness portion and a reduced thickness portion, wherein the full thickness portion is formed at a first end of the lead proximate to an outer perimeter of the leadframe and the reduced thickness portion extends from the full thickness portion to a second end of the lead proximate to the die pad;

an adhesive applied on the reduced thickness portions of the plurality of leads at a bottom side;

a spacer structure affixed to the reduced thickness portions of the plurality of leads by way of the adhesive;

a semiconductor die attached to a top side of the die pad; and

an encapsulant encapsulating at least a portion of the semiconductor die, the plurality of leads, and the spacer structure

wherein the spacer structure includes a ring portion and a plurality of finger portions, each finger portion attached to a corresponding lead of the plurality of leads, the ring portion is positioned proximate to the full thickness portions of the leads of the plurality of leads and the finger portions are positioned proximate to the second ends of the leads of the plurality of leads.

14 . The semiconductor device of claim 13 , wherein a length of the reduced thickness portion is greater than a length of the full thickness portion of the leads of the plurality.

15 . The semiconductor device of claim 13 , wherein the spacer structure is formed from a non-conductive, substantially rigid material and configured to support the reduced thickness portion of the leads of the plurality of leads during a wire bond operation.

16 . The semiconductor device of claim 13 , wherein a bottom surface of the full thickness portion of the leads of the plurality and a bottom surface of the spacer structure are substantially coplanar and exposed at a bottom side of the encapsulant.