Direct bonding in microelectronic assemblies

Inventors: Aleksandar Aleksov (Chandler, AZ); Adel A. Elsherbini (Chandler, AZ); Shawna M. Liff (Scottsdale, AZ); Johanna M. Swan (Scottsdale, AZ); Feras Eid (Chandler, AZ); Randy B. Osborne (Beaverton, OR); Van H. Le (Beaverton, OR)

Assignee: Intel Corporation

H10W70/611 H10W70/635 H10W70/65 H10W72/50 H10W90/00 H10W90/401

View Patent ↗

Loading inventors, assignments & file history…

Monitor This Case

Get email alerts when status or documents change.

Order Certified Copies

Most orders are placed with the USPTO same day — all within 24 business hours.

Order via The Patent Place →

Pre-filled with this patent's details

Quick Facts

Patent No.: US 12685189
App. No.: 18/746,188
Granted: Jul 14, 2026
Kind: B2

External Links

USPTO Patent Center↗ Full Patent PDF↗

Abstract

Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component, including an organic dielectric material; a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes metal contacts and a dielectric material between adjacent ones of the metal contacts, and wherein the dielectric material includes an inorganic dielectric material; and a third microelectronic component coupled to the first microelectronic component by wire bonding or solder.

Claims (26)

1 . A microelectronic assembly, comprising:

a first microelectronic component, including an organic dielectric material;

a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes metal contacts and a dielectric material between adjacent ones of the metal contacts, and wherein the dielectric material includes an inorganic dielectric material;

a third microelectronic component coupled to the first microelectronic component by wire bonding or solder;

wherein the first microelectronic component has a first face and an opposing second face, the second microelectronic component is coupled to the first face, and the third microelectronic component is coupled to the second face; and

wherein solder is coupled to the second face, and a height of the solder is greater than a height of the third microelectronic component.

2 . The microelectronic assembly of claim 1 , wherein solder is coupled to the first face, and a height of the solder is greater than a height of the second microelectronic component.

3 . The microelectronic assembly of claim 1 , further comprising:

a mold material around the second microelectronic component and the third microelectronic component.

4 . The microelectronic assembly of claim 3 , wherein the mold material does not extend between the first microelectronic component and the second microelectronic component.

5 . The microelectronic assembly of claim 1 , further comprising:

a fourth microelectronic component coupled to the first microelectronic component, the third microelectronic component is coupled to the first microelectronic component by one of wire bonding and solder, and the fourth microelectronic component is coupled to the first microelectronic component by an other of wire bonding and solder.

6 . The microelectronic assembly of claim 1 , further comprising:

a package substrate is coupled to the first microelectronic component by solder.

7 . The microelectronic assembly of claim 6 , further comprising:

a fifth microelectronic component coupled to the package substrate by wire bonding or solder.

8 . The microelectronic assembly of claim 1 , wherein the second microelectronic component is a memory component and the third microelectronic component is a logic component.

9 . The microelectronic assembly of claim 1 , wherein the third microelectronic component is coupled to the first microelectronic component by wire bonding, and the third microelectronic component includes a solar cell, an optical sensor, a mechanical sensor, or an electromagnetic sensor.

10 . The microelectronic assembly of claim 1 , wherein the first microelectronic component includes an interposer.

11 . The microelectronic assembly of claim 1 , wherein the first microelectronic component includes a semiconductor die.

12 . The microelectronic assembly of claim 1 , wherein the first microelectronic component includes a stack of dies.

13 . The microelectronic assembly of claim 12 , wherein the stack of dies is a high-bandwidth memory stack.

14 . The microelectronic assembly of claim 1 , further comprising:

a fourth microelectronic component, and the fourth microelectronic component is coupled between the second microelectronic component and the first microelectronic component.

15 . The microelectronic assembly of claim 14 , wherein the first microelectronic component is coupled to the fourth microelectronic component by direct bonding.

16 . The microelectronic assembly of claim 14 , wherein the fourth microelectronic component includes a through-substrate via.