IP Library Granted Patent US 12685199
Granted Patent B2
US 12685199 · App. 18/325,705 · Granted Jul 14, 2026

Systems and methods for fabricating a 2D-material-based quantum sensor chip

Inventors: Biswajit Sahoo (La Jolla, CA); Alejandro Ruiz (Ann Arbor, MI); Songtao Wu (Ann Arbor, MI); Debasish Banerjee (Ann Arbor, MI)
Assignees: TOYOTA MOTOR ENGINEERING & MANUFACTURING NORTH AMERICA, INC.; TOYOTA JIDOSHA KABUSHIKI KAISHA
H10W70/685G01R33/0047G01R33/0052G01R33/0076H10P50/00B81C1/00071B81C1/00246B81C1/00523B81C2201/0191B81C2201/0195B81C2203/051H05K3/025
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Quick Facts
Patent No.
US 12685199
App. No.
18/325,705
Granted
Jul 14, 2026
Kind
B2
Abstract

A method, computer program product, and sensory chip for use as a quantum magnetometer. A silicon-based material may be coated with a first metal material and a second metal material to create a substrate. A multi-layer hexagonal boron nitride (h-BN) may be transferred onto the substrate. A protective film may be coated on a layer of the multi-layer h-BN. The layer of the multi-layer h-BN may be irradiated for defect generation in the layer of the multi-layer h-BN. An active region of the substrate may be etched. Resist of the substrate may be removed. Contact pads may be created for the substrate. A layer of the first metal material and the second metal material may be coated on the substrate. Additional resist of the substrate may be removed. The substrate may be cut into a plurality of smaller substrates, wherein each smaller substrate of the plurality of smaller substrates includes a h-BN based quantum magnetometer.

Claims (19)

1 . A method comprising:

coating a silicon-based material with a first metal material and a second metal material to create a substrate;

transferring a multi-layer hexagonal boron nitride (h-BN) onto the substrate;

coating a protective film on a layer of the multi-layer h-BN;

irradiating the layer of the multi-layer h-BN for defect generation in the layer of the multi-layer h-BN;

etching an active region of the substrate;

removing first resist of the substrate;

creating contact pads for the substrate;

coating a layer of the first metal material and the second metal material on the substrate;

removing second resist of the substrate; and

cutting the substrate into a plurality of smaller substrates, wherein each smaller substrate of the plurality of smaller substrates includes a h-BN based quantum magnetometer.

2 . The method of claim 1 further comprising heating the multi-layer h-BN on the substrate.

3 . The method of claim 1 , wherein removing at least one of the first resist or the second resist of the substrate includes: ion etching; and

sonification.

4 . The method of claim 1 further comprising aligning crosses on the substrate.

5 . The method of claim 1 , wherein creating the contact pads for the substrate includes a second step etching of the substrate.

6 . The method of claim 1 , wherein removing the second resist of the substrate includes:

ion etching; and sonification.

7 . The method of claim 1 wherein the first metal material includes titanium and the second metal material includes gold.