AI bonding wire for semiconductor devices
To provide an Al bonding wire exhibiting a favorable high-temperature and high-humidity service life in a high-temperature and high-humidity environment required for next-generation vehicle-mounted power devices. The Al bonding wire for semiconductor devices containing equal to or larger than 3 mass ppm and equal to or smaller than 500 mass ppm of one or more of Pd and Pt in total, in which, as a result of measuring a crystal orientation on a cross section parallel to a wire axis direction including a wire axis of the bonding wire, an orientation ratio of a <100> crystal orientation angled at 15 degrees or less to the wire axis direction is equal to or higher than 30% and equal to or lower than 90%.
1 . An Al bonding wire for semiconductor devices containing equal to or larger than 3 mass ppm and equal to or smaller than 500 mass ppm of one or more of Pd and Pt in total, wherein, as a result of measuring a crystal orientation on a cross-section parallel to a wire axis direction including a wire axis of the bonding wire, an orientation ratio of a <100> crystal orientation angled at 15 degrees or less to the wire axis direction is equal to or higher than 30% and equal to or lower than 90%.
2 . The Al bonding wire for semiconductor devices according to claim 1 , wherein a tensile strength is equal to or larger than 25 MPa and equal to or smaller than 85 MPa.
3 . The Al bonding wire for semiconductor devices according to claim 1 , further containing equal to or larger than 3 mass ppm and equal to or smaller than 10000 mass ppm of one or more of Si, Au, and Ag in total.
4 . The Al bonding wire for semiconductor devices according to claim 1 , further containing equal to or larger than 3 mass ppm and equal to or smaller than 700 mass ppm of one or more of Fe and Mg in total.
5 . The Al bonding wire for semiconductor devices according to claim 1 , wherein a content of Al is equal to or larger than 98% by mass.
6 . The Al bonding wire for semiconductor devices according to claim 1 , wherein a balance of the Al bonding wire comprises Al and inevitable impurities.
7 . A semiconductor device comprising the Al bonding wire for semiconductor devices according to claim 1 .
8 . The Al bonding wire for semiconductor devices according to claim 1 , wherein the Al bonding wire contains both Pd and Pt, and a total amount of Pd and Pt in the Al bonding wire is equal to or larger than 3 mass ppm and equal to or smaller than 500 mass ppm.
9 . The Al bonding wire for semiconductor devices according to claim 3 , wherein the Al bonding wire contains at least Au.