Method for manufacturing semiconductor device including disposing an adhesive thermal insulation material on the semiconductor device
A method for manufacturing a semiconductor device, the method including: a step of disposing an adhesive thermal insulation material on a semiconductor device; a step of performing reflow of the semiconductor device having the thermal insulation material disposed thereon; and a step of detaching the thermal insulation material from the semiconductor device.
1 . A method for manufacturing a semiconductor device, the method comprising:
a step of disposing an adhesive thermal insulation material on a semiconductor device;
a step of performing reflow of the semiconductor device having the adhesive thermal insulation material disposed thereon; and
a step of detaching the adhesive thermal insulation material from the semiconductor device,
wherein the adhesive thermal insulation material satisfies the following Formula (A):
F 1 >F 2 (A)
wherein, in the Formula (A), F1 represents the adhesive strength of the adhesive thermal insulation material after heating the adhesive thermal insulation material at 220° C. for 120 seconds, and F2 represents the adhesive strength of the adhesive thermal insulation material after heating the adhesive thermal insulation material at 260° C. for 30 seconds.
2 . The method for manufacturing a semiconductor device according to claim 1 ,
wherein the adhesive thermal insulation material satisfies the following Formula (B):
F 0≤ F 1 (B)
wherein, in the Formula (B), F0 represents the adhesive strength of the adhesive thermal insulation material at 25° C., and F1 represents the adhesive strength of the adhesive thermal insulation material after heating the adhesive thermal insulation material at 220° C. for 120 seconds.
3 . The method for manufacturing a semiconductor device according to claim 1 ,
wherein the adhesive thermal insulation material contains a matrix polymer and thermally expandable hollow particles.
4 . The method for manufacturing a semiconductor device according to claim 1 ,
wherein the adhesive thermal insulation material molded in advance into a sheet shape is disposed in the step of disposing the adhesive thermal insulation material.
5 . The method for manufacturing a semiconductor device according to claim 1 ,
wherein a liquid thermal insulation material precursor is disposed on the semiconductor device, and then the liquid thermal insulation material precursor is cured in the step of disposing the adhesive thermal insulation material.
6 . A method for manufacturing a semiconductor device, the method comprising:
a step of disposing an adhesive thermal insulation material on a semiconductor device;
a step of performing reflow of the semiconductor device having the adhesive thermal insulation material disposed thereon; and
a step of detaching the adhesive thermal insulation material from the semiconductor device,
wherein the adhesive thermal insulation material satisfies the following Formula (B):
F 0≤ F 1 (B)
wherein, in the Formula (B), F0 represents the adhesive strength of the adhesive thermal insulation material at 25° C., and F1 represents the adhesive strength of the adhesive thermal insulation material after heating the adhesive thermal insulation material at 220° C. for 120 seconds.
7 . The method for manufacturing a semiconductor device according to claim 6 ,
wherein the adhesive thermal insulation material contains a matrix polymer and thermally expandable hollow particles.
8 . The method for manufacturing a semiconductor device according to claim 6 ,
wherein the adhesive thermal insulation material molded in advance into a sheet shape is disposed in the step of disposing the adhesive thermal insulation material.
9 . The method for manufacturing a semiconductor device according to claim 6 ,
wherein a liquid thermal insulation material precursor is disposed on the semiconductor device, and then the liquid thermal insulation material precursor is cured in the step of disposing the adhesive thermal insulation material.