Semiconductor device

1 . A semiconductor device comprising:

a first conductive member;

a second conductive member;

an interconnection member located between the first conductive member and the second conductive member;

a plurality of semiconductor chips located between the second conductive member and the interconnection member in a first direction from the first conductive member to the second conductive member; and

a plurality of terminals extending from the interconnection member in a direction intersecting the first direction,

one semiconductor chip of the plurality of semiconductor chips including:

a semiconductor layer,

a first electrode located between the first conductive member and the semiconductor layer and electrically connected to the first conductive member,

a first gate pad located between the first conductive member and the semiconductor layer,

a second gate pad located between the first conductive member and the semiconductor layer, and

a second electrode located between the semiconductor layer and the second conductive member and electrically connected to the second conductive member,

the plurality of terminals include:

a first gate terminal electrically connected to the first gate pad via the interconnection member,

a second gate terminal electrically connected to the second gate pad via the interconnection member, and

a sense terminal electrically connected to the first conductive member via the interconnection member, and

the sense terminal is located between the first gate terminal and the second gate terminal in a plan view perpendicular to the first direction.

2 . The semiconductor device according to claim 1 , wherein

the interconnection member includes

a first interconnection layer electrically connected to the first gate terminal,

a second interconnection layer electrically connected to the second gate terminal, and

a third interconnection layer electrically connected to the sense terminal.

3 . The semiconductor device according to claim 2 , wherein

the third interconnection layer is located between the first interconnection layer and the second interconnection layer in the first direction.

4 . A semiconductor device comprising:

a first conductive member;

a second conductive member;

an interconnection member located between the first conductive member and the second conductive member;

a plurality of semiconductor chips located between the second conductive member and the interconnection member in a first direction from the first conductive member to the second conductive member; and

a plurality of terminals extending from the interconnection member in a direction intersecting the first direction,

one semiconductor chip of the plurality of semiconductor chips including:

a semiconductor layer,

a first electrode located between the first conductive member and the semiconductor layer and electrically connected to the first conductive member,

a first gate pad located between the first conductive member and the semiconductor layer,

a second gate pad located between the first conductive member and the semiconductor layer, and

a second electrode located between the semiconductor layer and the second conductive member and electrically connected to the second conductive member,

the plurality of terminals include:

a first gate terminal electrically connected to the first gate pad via the interconnection member,

a second gate terminal electrically connected to the second gate pad via the interconnection member,

a first sense terminal electrically connected to the first conductive member via the interconnection member, and

a second sense terminal electrically connected to the first conductive member via the interconnection member, and

in a plan view perpendicular to the first direction, the first sense terminal is located adjacent to the first gate terminal, and the second sense terminal is located adjacent to the second gate terminal.

5 . The semiconductor device according to claim 4 , wherein

the first sense terminal and the second sense terminal are located between the first gate terminal and the second gate terminal in the plan view.

6 . The semiconductor device according to claim 4 , wherein

in the plan view, when a straight line passing through a position having an equal distance from the first gate terminal and the first sense terminal between the first gate terminal and the first sense terminal is defined as a first imaginary line, and a straight line passing through a position having an equal distance from the second gate terminal and the second sense terminal between the second gate terminal and the second sense terminal is defined as a second imaginary line, an angle formed by the first imaginary line and the second imaginary line is 45° or more and 135° or less.

7 . The semiconductor device according to claim 4 , wherein

the interconnection member includes

a first interconnection layer electrically connected to the first gate terminal,

a second interconnection layer electrically connected to the second gate terminal, and

a third interconnection layer electrically connected to the first sense terminal and the second sense terminal.

8 . The semiconductor device according to claim 7 , wherein

the third interconnection layer is located between the first interconnection layer and the second interconnection layer in the first direction.

9 . The semiconductor device according to claim 1 , wherein

a difference between a distance between the first gate terminal and the sense terminal and a distance between the second gate terminal and the sense terminal is 0 mm or more and 15 mm or less.

10 . The semiconductor device according to claim 4 , wherein

a difference between a distance between the first gate terminal and the first sense terminal and a distance between the second gate terminal and the second sense terminal is 0 mm or more and 15 mm or less.

11 . The semiconductor device according to claim 6 , wherein the angle formed by the first imaginary line and the second imaginary line is 75° or more and 105° or less.