Polishing pad for chemical mechanical polishing, chemical mechanical polishing apparatus including the same, and method of fabricating semiconductor device using the chemical mechanical polishing apparatus
A polishing pad for chemical mechanical polishing includes a polymer matrix and a temperature sensitive agent dispersed in the polymer matrix and constituting 1 to 40% by volume of the polishing pad, wherein the temperature sensitive agent includes a two-dimensional (2D) sheet material having a thermal conductivity of 1 W/(m·K) or more.
1 . A polishing pad for chemical mechanical polishing, the polishing pad comprising:
a polymer matrix;
a temperature sensitive agent dispersed in the polymer matrix and constituting 1 to 40% by volume of the polishing pad; and
a continuous polishing surface configured to polish a wafer, the continuous polishing surface comprising the polymer matrix and the temperature sensitive agent,
wherein the temperature sensitive agent comprises a two-dimensional (2D) sheet material having a thermal conductivity of 1 W/(m·K) or more.
2 . The polishing pad of claim 1 , wherein the 2D sheet material comprises at least one of graphene, graphene oxide, hexagonal boron nitride, graphitic carbon nitride, amorphous vanadium pentoxide, black phosphorous, silicene, and arsenene.
3 . The polishing pad of claim 2 , wherein the 2D sheet material comprises at least one of graphene and hexagonal boron nitride.
4 . The polishing pad of claim 1 , wherein the polymer matrix comprises at least one of polyurethane, polyolefin, and polycarbonate.
5 . The polishing pad of claim 4 , wherein the polymer matrix comprises polyurethane.
6 . The polishing pad of claim 1 , wherein the polishing pad has a thermal conductivity of 0.1 W/(m·K) or more.
7 . The polishing pad of claim 1 , wherein the polishing pad is a polishing pad for polishing a metal layer.
8 . A polishing pad for chemical mechanical polishing, the polishing pad comprising:
a polymer matrix;
a temperature sensitive agent dispersed in the polymer matrix; and
a continuous polishing surface configured to polish a wafer, the continuous polishing surface comprising the polymer matrix and the temperature sensitive agent,
wherein the temperature sensitive agent comprises at least one of graphene, graphene oxide, hexagonal boron nitride, graphitic carbon nitride, amorphous vanadium pentoxide, black phosphorous, silicene, and arsenene.
9 . The polishing pad of claim 8 , comprising 1 to 40% by volume of the temperature sensitive agent based on 100% by volume of the polishing pad for chemical mechanical polishing.
10 . The polishing pad of claim 8 , wherein the temperature sensitive agent comprises hexagonal boron nitride.
11 . The polishing pad of claim 10 , wherein the polishing pad has a thermal conductivity of 1 W/(m·K) or more.
12 . The polishing pad of claim 8 , wherein the temperature sensitive agent comprises graphene.
13 . The polishing pad of claim 12 , wherein the polishing pad has a thermal conductivity of 0.1 W/(m·K) or more.
14 . The polishing pad of claim 8 , wherein the polishing pad is configured to polish a metal layer.