Method of forming patterns in layered materials at an atomic scale

1 . A method of forming a layered material, the method comprising:

arranging a two-dimensional layered material (“2DLM”) on a base material at an incommensurate rotational stacking interface such that the stacking interface exhibits a Moiré interference superlattice having one or more reactive regions;

exposing the one or more reactive regions to a functionalizing material such that the functionalizing material selectively chemisorbs on the reactive regions, thereby forming functionalized regions at the stacking interface that have a different reactivity than neighboring regions;

exposing the functionalized stacking interface to at least one reactive material wherein the at least one reactive material reacts with the functionalizing material within the functionalized regions to create a chemical bond between the at least one reactive material and the functionalizing material configured to disrupt localized chemical bonds between the 2DLM and the base material neighboring the functionalized regions and create at least one desorbed molecule;

selectively removing the at least one desorbed molecule from the functionalized regions to form a plurality of apertures, wherein removal of the at least one desorbed molecule leaves apertures of the same shape as the functionalized regions;

wherein the plurality of apertures are in the 2DLM and not the base material;

wherein the at least one reactive material is selected from a group comprising an elemental gas, a molecular gas, a plasma, and a combination thereof; and

wherein the at least one reactive material is partially ionized.

2 . The method of claim 1 , wherein the removing includes vacuum purge.

3 . The method of claim 1 , wherein the arranging includes chemical vapor deposition (CVD).

4 . The method of claim 1 , wherein the arranging includes forming or disposing the 2DLM on the base material.

5 . The method of claim 1 , wherein the arranging includes misaligning the 2DLM relative to the base material.

6 . The method of claim 5 , wherein the misaligning includes epitaxially misaligning, van der Waals misaligning, rotationally misaligning, translationally misaligning, stress misaligning, strain misaligning, angular misaligning, tilt misaligning, or combinations thereof, the 2DLM relative to the base material.

7 . The method of claim 1 , wherein the 2DLM includes a first material and the base material includes a second material.

8 . The method of claim 7 , wherein the first material and the second material are different materials.

9 . The method of claim 1 , wherein the base material is a 2DLM, multi-layer structure, mono-crystalline structure, or poly-crystalline structure, or combinations thereof.

10 . The method of claim 1 , wherein the apertures are polygonal, curvilinear, slot, circular, oval shaped, or combinations thereof.