IP Library Granted Patent US 12686912
Granted Patent B2
US 12686912 · App. 18/184,423 · Granted Jul 21, 2026

Thin metal films having an ultra-flat surface and methods of preparing the same

Inventors: Andrew Stollenwerk (Cedar Falls, IA); Timothy Kidd (Cedar Falls, IA)
Assignee: University of Northern Iowa Research Foundation
C23C14/185C23C14/0005C23C14/30C23C14/34C23C14/5806
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Quick Facts
Patent No.
US 12686912
App. No.
18/184,423
Filed
Mar 15, 2023
Granted
Jul 21, 2026
Kind
B2
Art Unit
1781
USPC
428/141
Abstract

The present disclosure relates generally to thin metal films having an ultra-flat surface and methods of their preparation. In particular, the ultra-flat thin metal films comprise FCC metals. Preferably, the thin metal films are attached to a substrate. Preferred substrates comprise chalcogenides and dichalcogenides. Beneficially, the thin metal films described herein can be prepared at ambient temperatures.

Claims (12)

1 . A thin film composition comprising:

a substrate and a metal, wherein the metal has a first side and a second side, wherein the first side is attached to the substrate forming an interface, wherein the interface is opposed to the second side, and wherein the second side is a continuous flat surface; wherein the continuous flat surface has a surface roughness of less than 200 pm as measured by scanning tunneling microscopy;

wherein the substrate comprises MoS 2 , and

wherein the metal comprises gold and has a thickness of at least about 7.0 nm.

2 . The thin film composition of claim 1 , wherein the gold has a thickness between 7.0 nm and up to about 200 nm.

3 . The thin film composition of claim 1 , wherein the continuous flat surface has a surface roughness of less than about 100 pm as measured by scanning tunneling microscopy.

4 . The thin film composition of claim 1 , wherein the continuous flat surface is a reflective coating.

5 . A method of preparing the thin metal film composition of claim 1 comprising:

(a) depositing the gold on the MoS 2 substrate to form a thin metal film; wherein the depositing step is performed under vacuum conditions and at a temperature of at least about 0° C.; and

(b) annealing the thin metal film; wherein the annealing is performed for a time between about 1 minute and about 20 hours; and wherein the annealing is performed at a temperature up to about 1000° C.

6 . The method of claim 5 , wherein the depositing step is performed by vacuum evaporation, sputtering, laser ablation, chemical vapor deposition, molecular beam epitaxy, or electroplating.

7 . The method of claim 5 , wherein the gold has a thickness between 7.0 nm and up to about 200 nm; and wherein the continuous surface has a surface roughness of less than about 100 pm.