IP Library › Granted Patent US 12,686,914
Granted Patent B2
US 12,686,914 · App. 17/995,937 · Granted Jul 21, 2026

Method and device for forming tungsten film, and device for forming intermediate film before forming tungsten film

Inventors: Kensaku Narushima (Nirasaki City, JP); Takanobu Hotta (Nirasaki City, JP); Takuya Kawaguchi (Nirasaki City, JP)
Assignee: Tokyo Electron Limited
C23C16/0272C23C16/08C23C16/34C23C16/45527C23C16/52H10P14/412H10W20/045
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Quick Facts
Patent No.
US 12,686,914
App. No.
17/995,937
Filed
Oct 11, 2022
Granted
Jul 21, 2026
Kind
B2
Art Unit
2818
USPC
438/654
Abstract

The formation of a tungsten film is promoted when forming the tungsten film using tungsten chloride on an upper layer side of a titanium silicon nitride film. A titanium silicon nitride film is formed on one surface side of a semiconductor wafer as a substrate, and an intermediate film for promoting the formation of the tungsten film made of the tungsten chloride is formed on the upper layer side of the titanium silicon nitride film by using a gas for forming the intermediate film. The tungsten film is formed on an upper layer side of the intermediate film by using a gas of the tungsten chloride.

Claims (5)

1 . A method of forming a tungsten film on a substrate, the method comprising:

forming, on an upper layer side of a titanium silicon nitride film formed on one surface side of the substrate, an intermediate film for promoting formation of the tungsten film using tungsten chloride; and

forming the tungsten film on an upper layer side of the intermediate film by using a gas of the tungsten chloride,

wherein the intermediate film is a titanium nitride film.

2 . The method of claim 1 , wherein the titanium nitride film is obtained by alternately supplying a titanium-containing gas and a nitrogen-containing gas to the substrate and causing the titanium-containing gas and the nitrogen-containing gas to react with each other.