Fluorination of ancillary ligands of group (III) precursors and their applications in vapor depositions
A method for forming a Group (III)-containing film on a substrate comprises exposing the substrate to a vapor of a Group (III)-containing film-forming composition that contains a Group (III)-containing precursor and depositing at least part of the Group (III)-containing precursor onto the substrate to form the Group (III)-containing film on the substrate through a vapor deposition process. The Group (III)-containing precursor contains at least one fluorocarbon group on at least one of ancillary ligands. The Group (III)-containing precursor is tris(2-(dimethylamino)methyl-1,1,1,3,3,3-hexafluoropropan-2-ol)indium, represented as (F-dmamp) 3 In.
1 . A method for forming a Group (III)-containing film on a substrate, the method comprising the steps of:
exposing the substrate to a vapor of a Group (III)-containing film-forming composition that contains a Group (III)-containing precursor and a co-reactant As(SiMe 3 ) 3 ; and
depositing at least part of the Group (III)-containing precursor onto the substrate to form the Group (III)-containing film on the substrate through a vapor deposition process,
wherein the Group (III)-containing precursor is selected from the following formulae:
wherein M is Al, Ga, or In; R 1 , R 2 , R 3 and R 4 are independently selected from hydrogen, fluorine, linear, branched or cyclic alkyl groups, fluorocarbons, or aryl groups with between 1 and 12 carbons and at least one of R 1 though R 4 is a fluorine or fluorocarbon; wherein n=1-3 forming 4- to 6-membered chelates; provided that if n is greater than or equal to 2, R 3 and R 4 substituents of additional carbon units do not have to be identical and may be independently selected from hydrogen, fluorine, linear, branched or cyclic alkyl groups, fluorocarbons, or aryl groups with between 1 and 12 carbons;
2 . The method of claim 1 , wherein the Group (III)-containing precursor contains at least one fluorocarbon group on at least one of ancillary ligands.
3 . The method of claim 1 , wherein the Group (III)-containing precursor is tris(2-(dimethylamino)methyl-1,1,1,3,3,3-hexafluoropropan-2-ol)indium, represented as (F-dmamp) 3 In.
4 . The method of claim 1 , wherein the Group (III)-containing precursor is tris(2-(ethylmethylamino)methyl-1,1,1,3,3,3-hexafluoropropan-2-ol)indium.
5 . The method of claim 1 , wherein the Group (III)-containing film is InGaAs, In x O y where x=0.5-1.5, y=0.5-1.5, InSnO (ITO), InGaZnO (IGZO), InN, InP, InAs, InSb, InSe, InTe, In 2 S 3 , Ga 2 O 3 , GaN, GaAs, Al 2 O 3 , AlN, AlP, AlAs, GaP, GaSb, or combination thereof.
6 . The method of claim 1 , wherein the vapor deposition process is a thermal ALD process.
7 . A method for forming a Group (III)-containing film on a substrate, the method comprising the steps of:
forming a chemisorbed and/or physisorbed film, on the surface of the substrate, of an Group (III)-containing precursor and a co-reactant As(SiMe 3 ) 3 ,
wherein the Group (III)-containing precursor has the formula:
wherein M is Al, Ga, or In; R 1 , R 2 , R 3 and R 4 are independently selected from hydrogen, fluorine, linear, branched or cyclic alkyl groups, fluorocarbons, or aryl groups with between 1 and 12 carbons and at least one of R 1 though R 4 is a fluorine or fluorocarbon; wherein n=1-3 forming 4- to 6-membered chelates; provided that if n is greater than or equal to 2, R 3 and R 4 substituents of additional carbon units do not have to be identical and may be independently selected from hydrogen, fluorine, linear, branched or cyclic alkyl groups, fluorocarbons, or aryl groups with between 1 and 12 carbons