IP Library Granted Patent US 12686939
Granted Patent B2
US 12686939 · App. 18/574,213 · Granted Jul 21, 2026

Method for producing single crystal diamond and single crystal diamond

Inventors: Ryuji Oshima (Tokyo, JP); Kanji Iizuka (Saitama, JP); Fedor Shakhov (St Petersburg, RU); Alexander Vul (St Petersburg, RU)
Assignees: DISCO Corporation; Ioffe Institute
C30B1/12C30B29/04
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Quick Facts
Patent No.
US 12686939
App. No.
18/574,213
Granted
Jul 21, 2026
Kind
B2
Abstract

Provided are a method for producing a single crystal diamond capable of synthesizing a single crystal diamond having excellent durability at a low cost in a short time, and the single crystal diamond. The method for producing the single crystal diamond employs a high-temperature and high-pressure method, and the single crystal diamond is synthesized by exposing raw materials composed of amorphous carbon and a carbon compound to a pressure and a temperature in a thermodynamically stable region of the diamond in a carbon phase equilibrium diagram.

Claims (15)

1 . A method for producing a single crystal diamond using a high-temperature and high-pressure method,

which comprises synthesizing the diamond by mixing raw materials consisting of amorphous carbon and carbon compounds having hydrogen and/or hydroxyl groups in a mass ratio of the amorphous carbon: the carbon compounds=7:3 to 4:6, and retaining under conditions of pressure of 5 to 10 GPa and temperature of 1300 to 1800° C. for 1 to 300 seconds.

2 . The method for producing the single crystal diamond according to claim 1 ,

wherein the amorphous carbon is carbon black, and

wherein the carbon compounds are at least one of aliphatic hydrocarbons, alcohols, and polyhydric alcohols.

3 . The method for producing the single crystal diamond according to claim 2 ,

wherein the aliphatic hydrocarbon is polyethylene,

wherein the alcohol is methanol, and

wherein the polyhydric alcohol is pentaerythritol or xylitol.

4 . The method for producing the single crystal diamond according to claim 1 ,

wherein a peak near 1332 cm −1 exists in the Raman spectrum.

5 . The method for producing the single crystal diamond according to claim 2 ,

wherein a peak near 1332 cm −1 exists in the Raman spectrum.

6 . The method for producing the single crystal diamond according to claim 3 ,

wherein a peak near 1332 cm −1 exists in the Raman spectrum.