Polycrystalline SIC article
Provided is a polycrystalline SiC molded body wherein the resistivity is not more than 0.050 Ωcm and, when the peak strength in a wave number range of 760-780 cm −1 in a Raman spectrum is regarded as “A” and the peak strength in a wave number range of 790-800 cm −1 in the Raman spectrum is regarded as “B”, then the peak ratio (A/B) is not more than 0.100.
1 . A polycrystalline SiC article formed by a CVD method and having:
a resistivity of 0.050 Ω·cm or less, and a peak ratio (A/B) of 0.015 to 0.100,
wherein “A” is a peak indicating a stacking fault of the polycrystalline SiC material and represents a peak intensity within a wave number range of 760 to 780 cm −1 in a Raman spectrum of the polycrystalline SiC article, and
“B” is a peak indicating β-SiC and represents a peak intensity within a wave number range of 790 to 800 cm −1 in the Raman spectrum of the polycrystalline SiC article.
2 . The polycrystalline SiC article according to claim 1 , wherein a content of nitrogen in the polycrystalline SiC article is 200 ppm (mass parts per million) or more.
3 . The polycrystalline SiC article according to claim 1 , wherein the article supports a single crystal SiC layer.
4 . The polycrystalline SiC article according to claim 1 , wherein the article is joined with a single crystal SiC layer.