Electric field measuring apparatus and method of measuring electric field using the same
An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.
1 . A method of measuring an electric field, the method comprising:
changing a refractive index of an electro-optical crystal by locating a probe in a first position below an upper surface of an electrostatic chuck provided with a wafer, the probe including the electro-optical crystal and a reflector;
receiving a first optical signal at the first position by allowing first light to be incident to and reflected from the probe at the first position;
moving the probe to a second position below the upper surface of the electrostatic chuck that is at a different vertical level from the first position and below the upper surface of the electrostatic chuck;
receiving a second optical signal at the second position by allowing second light to be incident to and reflected from the probe at the second position; and
calculating a strength of an electric field of the wafer provided on the upper surface of the electrostatic chuck,
wherein the probe is arranged in a lift pin in a through hole of the electrostatic chuck,
wherein the probe includes only a non-conductive material, and
wherein the strength of the electric field of the wafer is calculated using the first and second optical signals.
2 . The method of claim 1 ,
wherein the calculating of the strength of the electric field of the wafer includes calculating the strength of the electric field of the wafer, based on strengths of each of the first and second optical signals.
3 . The method of claim 1 ,
wherein the calculating of the strength of the electric field of the wafer includes calculating the strength of the electric field of the wafer, based on optical characteristic changes of each of the first and second optical signals.
4 . The method of claim 3 ,
wherein the optical characteristic changes include a polarization state of each of the first light and the second light.
5 . The method of claim 1 , further comprising:
cooling an internal optical waveguide that is configured to form an internal path of each of the first light and the second light.
6 . The method of claim 1 , further comprising:
measuring a strength of an alternating electric field of the wafer and a strength of an electrostatic field of the wafer using the probe.
7 . The method of claim 1 , further comprising:
dechucking the wafer using the lift pin.
8 . A method of measuring an electric field, the method comprising:
changing a refractive index of an electro-optical crystal by locating a probe in a first position below an upper surface of an electrostatic chuck provided with a wafer, the probe including the electro-optical crystal and a reflector;
receiving a first optical signal at the first position by allowing first light to be incident to and reflected from the probe at the first position;
moving the probe to a second position that is at a different vertical level from the first position and below the upper surface of the electrostatic chuck;
receiving a second optical signal at the second position by allowing second light to be incident to and reflected from the probe at the second position;
converting optical signals into electrical signals; and
calculating a strength of an electric field of the wafer,
wherein the probe is arranged in a lift pin in a through hole of the electrostatic chuck,
wherein the probe includes only a non-conductive material, and
wherein the strength of the electric field of the wafer is calculated using the first and second optical signals.
9 . The method of claim 8 ,
wherein the calculating of the strength of the electric field of the wafer includes calculating the strength of the electric field of the wafer, based on refractive indices of each of the first and second optical signals.
10 . The method of claim 8 ,
wherein the receiving of the first optical signal includes controlling an optical characteristic of the first optical signal, and
wherein the receiving of the second optical signal includes controlling an optical characteristic of the second optical signal.
11 . The method of claim 8 ,
wherein at least of each of the first light and the second light are reflected from the reflector including the non-conductive material.
12 . The method of claim 8 ,
wherein at each of the first and second positions, an optical signal is received a plurality of times.
13 . The method of claim 8 ,
wherein the receiving of the first optical signal includes generating the first light, and
wherein the receiving of the second optical signal includes generating the second light.
14 . The method of claim 8 , further comprising:
setting a vertical distance between the wafer and the probe at distance greater than or equal to 0.1 mm.
15 . The method of claim 8 ,
wherein a vertical moving distance of the lift pin is less than or equal to 30 mm.
16 . A method of measuring an electric field, the method comprising:
changing a refractive index of an electro-optical crystal by locating a probe in a first position below an upper surface of an electrostatic chuck provided with a wafer, the probe including the electro-optical crystal and a reflector;
receiving a first optical signal at the first position by allowing first light to be incident to and reflected from the probe at the first position;
moving the probe to a second position that is at a different vertical level from the first position and below the upper surface of the electrostatic chuck;
receiving a second optical signal at the second position by allowing second light to be incident to and reflected from the probe at the second position;
calculating a strength of an electric field of the wafer; and
comparing the strength of the electric field of the wafer to a preset threshold value,
wherein the probe is arranged in a lift pin in a through hole of the electrostatic chuck,
wherein the probe includes only a non-conductive material, and
wherein the strength of the electric field of the wafer is calculated using the first and second optical signals.
17 . The method of claim 16 ,
wherein when the strength of the electric field of the wafer is greater than the preset threshold value,
the method further comprises keeping the wafer on the electrostatic chuck.
18 . The method of claim 16 ,
wherein the preset threshold value is greater than or equal to 200 V.
19 . The method of claim 16 ,
wherein the wafer is subject to a plasma process before the calculating of the strength of the electric field of the wafer.
20 . The method of claim 16 ,
wherein the calculating of the strength of the electric field of the wafer is performed while a plasma process is being performed on the wafer.