Semiconductor testing apparatus and method for testing semiconductor structure
A semiconductor testing apparatus is provided, and includes a base, a conductive socket, a pusher, and a thermal interface material structure. The conductive socket is disposed in the base for containing a semiconductor structure. The pusher is over the conductive socket and movable in a vertical direction. The thermal interface material structure is connected to the pusher, and includes a resilient material and a metal film around the resilient material. The metal film and the resilient material are in contact with the pusher.
1 . A semiconductor testing apparatus, comprising:
a base;
a conductive socket disposed in the base for containing a semiconductor structure;
a pusher over the conductive socket and movable in a vertical direction; and
a thermal interface material structure connected to the pusher, comprising:
a resilient material;
a metal film around the resilient material, wherein the metal film and the resilient material are in contact with the pusher; and
a plurality of thermal conductive strips embedded in the resilient material, wherein the thermal conductive strips are inseparably connected to the pusher,
wherein the thermal interface material structure has an earlier thickness before contacting the semiconductor structure and a later thickness after released from the semiconductor structure, and a ratio of the later thickness to the earlier thickness is less than about 1 and higher than about 0.7.
2 . The semiconductor testing apparatus as claimed in claim 1 , wherein the pusher is configured to push the thermal interface material structure, so that a bottom surface of the metal film coincides with a top surface of the semiconductor structure.
3 . The semiconductor testing apparatus as claimed in claim 2 , wherein the resilient material is separated from the semiconductor structure when the metal film contacts the semiconductor structure.
4 . The semiconductor testing apparatus as claimed in claim 1 , wherein the resilient material is enclosed by the pusher and the metal film.
5 . The semiconductor testing apparatus as claimed in claim 1 , wherein a width of the pusher is shorter than a width of the semiconductor structure in a horizontal direction.
6 . The semiconductor testing apparatus as claimed in claim 1 , wherein the thermal conductive strips are separated from each other by the resilient material.
7 . The semiconductor testing apparatus as claimed in claim 1 , wherein the resilient material has a top surface, the top surface has an upper portion in contact with the pusher and a lower portion covered by the metal film.
8 . The semiconductor testing apparatus as claimed in claim 7 , wherein a portion of the thermal conductive strips are in contact with the pusher.
9 . The semiconductor testing apparatus as claimed in claim 1 , wherein an acute angle is between a center axis of the thermal conductive strips and a bottom surface of the pusher.
10 . A method for testing a semiconductor structure, comprising:
placing the semiconductor structure on a conductive socket disposed in a base;
pressing the semiconductor structure by moving a pusher, wherein a thermal interface material structure is connected to the pusher and comprises:
a resilient material;
a metal film around the resilient material and configured to contact the semiconductor structure, wherein the thermal interface material structure has a first thickness while being pressed by the pusher; and
a plurality of thermal conductive strips embedded in the resilient material, wherein the thermal conductive strips are inseparably connected to the pusher;
testing the semiconductor structure via the conductive socket while the semiconductor structure is pressed by the pusher; and
removing the pusher to release the thermal interface material structure from the semiconductor structure, wherein the thermal interface material structure has a second thickness greater than the first thickness when the thermal interface material structure is released from the semiconductor structure, the thermal interface material structure has a third thickness before the thermal interface material structure contacts the semiconductor structure, and a ratio of the second thickness to the third thickness is less than about 1 and higher than about 0.7.
11 . The method as claimed in claim 10 , further comprising:
conducting thermal energy from the semiconductor structure to the pusher via the thermal interface material structure when the semiconductor structure is pressed by the pusher.
12 . The method as claimed in claim 10 , wherein the resilient material is separated from the semiconductor structure by the metal film when the semiconductor structure is pressed by the pusher.
13 . The method as claimed in claim 10 , wherein the thermal conductive strips have different lengths.
14 . A method for testing a semiconductor structure, comprising:
placing the semiconductor structure on a conductive socket disposed in a base;
pressing the semiconductor structure by moving a pusher, wherein a thermal interface material structure is connected to the pusher and comprises:
a resilient material; and
a metal film around the resilient material; and
a plurality of thermal conductive strips embedded in the resilient material, wherein the thermal conductive strips are inseparably connected to the pusher;
testing the semiconductor structure via the conductive socket while the semiconductor structure is pressed by the pusher; and
removing the pusher to release the thermal interface material structure from the semiconductor structure,
wherein the thermal interface material structure has an earlier thickness before contacting the semiconductor structure and a later thickness after released from the semiconductor structure, and a ratio of the later thickness to the earlier thickness is less than about 1 and higher than about 0.7.
15 . The method as claimed in claim 14 , wherein the thermal conductive strips are inclined relative to a top surface of the resilient material.
16 . The method as claimed in claim 15 , wherein an angle between a center axis of the thermal conductive strips and a bottom surface of the resilient material is greater than or equal to about 45° and less than or equal to about 145°.
17 . The method as claimed in claim 14 , wherein pressing the semiconductor structure by the pusher comprises covering a top surface of the semiconductor structure by the metal film.
18 . The method as claimed in claim 14 , wherein pressing the semiconductor structure by the pusher comprises compressing and widening the thermal interface material structure.
19 . The method as claimed in claim 14 , wherein the metal film has a sealing portion extending along a top surface of the resilient material and in contact with the pusher.
20 . The semiconductor testing apparatus as claimed in claim 1 , wherein a center axis of the thermal conductive strips is inclined from a center axis of the resilient material.