Ultrasonication nano-geometry control process and methods
Disclosed herein are systems and methods for fabricating nanostructures on a substrate that can be used in eyepieces for displays, e.g., in head wearable devices. Fabricating and/or etching such a substrate can include submerging the substrate in a bath and applying ultrasonication to the bath for a first time period. The ultrasonication applied to the first bath can agitate the fluid to provide a substantially uniform first reactive environment across the surface of the substrate. The substrate can be submerged in a second bath and ultrasonication can be applied to the second bath for a second time period. The ultrasonication applied to the second bath can agitate the fluid to provide a substantially uniform second reactive environment across the surface of the substrate. A predetermined amount of material can be removed from the surface of the substrate during the second time period to produce an etched substrate.
1 . A method of etching a substrate including a plurality of nano-structures, the method comprising:
submerging the substrate in a first bath, the first bath comprising a first fluid;
applying ultrasonication to the first bath for a first time period, wherein applying ultrasonication agitates the first fluid to provide a substantially uniform first reactive environment across a surface of the substrate;
submerging the substrate in a second bath, the second bath comprising a second fluid; and
applying ultrasonication to the second bath for a second time period, wherein applying ultrasonication agitates the second fluid to provide a substantially uniform second reactive environment across the surface of the substrate, wherein a predetermined amount of material is removed from the surface of the substrate during the second time period to produce an etched substrate, and wherein a thickness of the predetermined amount of material removed from the surface is in a range of 5-50 nm,
wherein the amount of material is predetermined based on a length of the first time period and based further on a length of the second time period.
2 . The method of claim 1 , wherein the predetermined amount of material is uniformly removed from the surface of the substrate such that a cross-section of the plurality of nano-structures of the etched substrate is symmetric.
3 . The method of claim 1 , wherein:
the substrate comprises a base comprising a first material;
the nano-structures of the plurality of nano-structures are disposed on the base, the nano-structures comprising a first layer, the first layer comprising a second material different from the first material,
the nano-structures of the plurality of nano-structures have a substantially uniform width, and
the base is associated with a first etch rate for a first set of ultrasonication conditions and the first layer is associated with a second etch rate for the first set of ultrasonication conditions.
4 . The method of claim 3 , wherein each nano-structure of the plurality of nano-structures has a geometry corresponding to one of a stepped geometry, a re-entrant geometry, and a blazed geometry.
5 . The method of claim 3 , wherein the ultrasonication conditions of the first set of ultrasonication conditions include one or more of:
a temperature associated with one or more of the first bath and the second bath, the first bath comprising a base solution and the second bath comprising an acid solution,
the length of time associated with the first time period,
the length of time associated with the second time period,
a concentration of the acid solution, and
a concentration of the base solution.
6 . The method of claim 1 , wherein the substrate is formed from at least one of silicon, silicon dioxide, and silicon nitride.
7 . The method of claim 1 , wherein the second fluid is an acid solution, wherein the acid solution comprises approximately a 2% concentration of sulfuric acid in water.
8 . The method of claim 1 , wherein the first fluid is a base solution, wherein the base solution comprises approximately a 2% concentration of hydrogen peroxide or potassium hydroxide in water.
9 . The method of claim 1 , further comprising:
depositing a mask onto one or more surfaces of the substrate; and
removing one or more portions of the mask from the substrate, wherein at least a portion of the surface of the substrate is masked during the second time period.
10 . A compound comprising:
a substrate comprising:
a base comprising a first surface; and
a plurality of nano-structures disposed on the first surface,
wherein the substrate is configured to be etched by applying an ultrasonication process sequence to the substrate to form an etched substrate, the etched substrate comprising a plurality of etched nano-structures, and
wherein the etched nano-structures are fabricated by removing a first predetermined amount of material from the first surface and further by removing a second predetermined amount of material from one or more surfaces of the plurality of nano-structures, and wherein a thickness of the first predetermined amount of material removed from the first surface is in a range of 5-50 nm.
11 . The compound of claim 10 , wherein the predetermined amount of material is uniformly removed from the first surface and further is uniformly removed from the one or more surfaces of the plurality of nano-structures such that a cross-section of the plurality of etched nano-structures of the etched substrate is symmetric.
12 . The compound of claim 10 , wherein the ultrasonication process sequence comprises:
submerging the substrate in a first bath, the first bath comprising a first fluid;
applying ultrasonication to the first bath for a first time period, wherein applying ultrasonication agitates the first fluid to provide a substantially uniform first reactive environment across the first surface of the substrate;
submerging the substrate in a second bath, the second bath comprising a second fluid; and
applying ultrasonication to the second bath for a second time period, wherein applying ultrasonication agitates the second fluid to provide a substantially uniform second reactive environment across the first surface of the substrate, and wherein the predetermined amount of material is removed during the second time period to produce an etched substrate,
wherein the amount of material is predetermined based on a length of the first time period and based further on a length of the second time period.
13 . The compound of claim 12 , wherein:
the base comprises a first material,
the nano-structures of the plurality of nano-structures comprises a first layer, the first layer comprising a second material different from the first material,
the base is associated with a first etch rate for a first set of ultrasonication conditions, and
the first layer is associated with a second etch rate for the first set of ultrasonication conditions.
14 . The compound of claim 13 , wherein each nano-structure of the plurality of nano-structures has a substantially uniform width, and
wherein each etched nano-structure of the plurality of nano-structures has a geometry corresponding to one of a stepped geometry, a re-entrant geometry, and a blazed geometry.
15 . The compound of claim 13 , wherein the ultrasonication conditions of the first set of ultrasonication conditions include one or more of:
a temperature associated with one or more of the first bath and second bath, the first bath comprising a base solution and the second bath comprising an acid solution,
the length of time associated with the first time period,
the length of time associated with the second time period,
a concentration of the acid solution, and
a concentration of the base solution.
16 . The compound of claim 12 , wherein the second fluid is an acid solution, wherein the acid solution comprises approximately a 2% concentration of sulfuric acid in water.
17 . The compound of claim 12 , wherein the first fluid is a base solution, wherein the base solution comprises approximately a 2% concentration of hydrogen peroxide or potassium hydroxide in water.
18 . The compound of claim 10 , wherein the substrate is formed from at least one of silicon, silicon dioxide, and silicon nitride.