Electronic device
An electronic device including a substrate, a thin film transistor, a first organic layer, a first conductive layer, a second organic layer, a second conductive layer and a third conductive layer is disclosed. The thin film transistor is disposed on the substrate. The first organic layer is disposed on the thin film transistor and has a hole. The first conductive layer is disposed on the first organic layer, and the first conductive layer is electrically connected to the thin film transistor through the hole. The second organic layer is disposed on the first organic layer and the first conductive layer, and at least partially disposed in the hole. The second conductive layer is disposed on the second organic layer and electrically connected to the first conductive layer. The third conductive layer is disposed between the second organic layer and the second conductive layer.
1 . An electronic device, comprising:
a substrate;
a thin film transistor disposed on the substrate;
a first organic layer disposed on the thin film transistor and having a hole;
a first conductive layer disposed on the first organic layer, wherein the first conductive layer is electrically connected to the thin film transistor through the hole;
a second organic layer disposed on the first organic layer and the first conductive layer, wherein the second organic layer is at least partially disposed in the hole;
a second conductive layer disposed on the second organic layer and electrically connected to the first conductive layer;
a third conductive layer disposed between the second organic layer and the second conductive layer; and
a plurality of scan lines and a plurality of data lines disposed on the substrate, wherein the plurality of scan lines extend along a first direction, the plurality of data lines extend along a second direction, and the first direction is not parallel to the second direction,
wherein the third conductive layer comprises a plurality of first conductive patterns extending along the first direction and a plurality of second conductive patterns extending along the second direction, and the plurality of first conductive patterns intersect the plurality of second conductive patterns to form a grid pattern.
2 . The electronic device according to claim 1 , wherein the thin film transistor comprises a drain, and the first conductive layer is electrically connected to the drain.
3 . The electronic device according to claim 2 , wherein the first conductive layer and the second conductive layer comprise a transparent conductive material respectively.
4 . The electronic device according to claim 2 , wherein the third conductive layer comprises a metal material or a transparent conductive material.
5 . The electronic device according to claim 2 , further comprising a fourth conductive layer disposed on the second conductive layer, wherein the fourth conductive layer is electrically connected to the third conductive layer.
6 . The electronic device according to claim 5 , further comprising a fifth conductive layer disposed between the fourth conductive layer and the third conductive layer, wherein the fourth conductive layer is electrically connected to the third conductive layer through the fifth conductive layer.
7 . The electronic device according to claim 6 , wherein the fifth conductive layer comprises a metal material or a transparent conductive material.
8 . The electronic device according to claim 1 , further comprising a light-shielding layer disposed on the substrate and at least partially overlapped with one of the scan lines in a normal direction of the electronic device, wherein in the second direction, a width of the light-shielding layer is greater than a width of the one of the scan lines.
9 . The electronic device according to claim 1 , wherein in a normal direction of the electronic device, each of the first conductive patterns is at overlapped with a respective one of the scan lines, and each of the second conductive patterns is overlapped with a respective one of the data lines.
10 . An electronic device, comprising:
a substrate;
a thin film transistor disposed on the substrate and comprising a drain;
a first organic layer disposed on the thin film transistor and having a hole;
a first conductive layer disposed on the first organic layer;
a second organic layer disposed on the first organic layer and the first conductive layer, wherein the second organic layer is at least partially disposed in the hole;
a second conductive layer disposed on the second organic layer and electrically connected to the first conductive layer;
a third conductive layer disposed between the second organic layer and the second conductive layer, wherein the third conductive layer is electrically connected to the drain; and
a plurality of scan lines and a plurality of data lines disposed on the substrate, wherein the plurality of scan lines extend along a first direction, the plurality of data lines extend along a second direction, and the first direction is not parallel to the second direction,
wherein the first conductive layer comprises a plurality of fourth conductive patterns extending along the first direction and a plurality of fifth conductive patterns extending along the second direction, and the plurality of fourth conductive patterns intersect the plurality of fifth conductive patterns to form a grid pattern.
11 . The electronic device according to claim 10 , wherein the third conductive layer comprises a transparent conductive material.
12 . The electronic device according to claim 10 , further comprising a fourth conductive layer disposed on the second conductive layer, wherein the fourth conductive layer is electrically connected to the third conductive layer.
13 . The electronic device according to claim 10 , wherein a first distance exists between an edge of the hole of the first organic layer and an end of the first conductive layer, and the first distance is greater than or equal to 0.1 micrometers and less than or equal to 5 micrometers.
14 . The electronic device according to claim 10 , further comprising an insulating layer disposed between the third conductive layer and the second conductive layer, wherein the insulating layer has a hole, and the second conductive layer is electrically connected to the first conductive layer through the hole of the insulating layer.
15 . The electronic device according to claim 14 , wherein a second distance exists between an end of the second organic layer and an edge of the hole of the insulating layer, and the second distance is greater than or equal to 0.1 micrometers and less than or equal to 20 micrometers.
16 . An electronic device, comprising:
a substrate;
a thin film transistor disposed on the substrate;
a first organic layer disposed on the thin film transistor and having a hole;
a first conductive layer disposed on the first organic layer, wherein the first conductive layer is electrically connected to the thin film transistor through the hole;
a second organic layer disposed on the first organic layer and the first conductive layer, wherein the second organic layer is at least partially disposed in the hole;
a second conductive layer disposed on the second organic layer and electrically connected to the first conductive layer;
a third conductive layer disposed between the second organic layer and the second conductive layer;
a fourth conductive layer disposed on the second organic layer, wherein the fourth conductive layer is in contact with and electrically connected to the third conductive layer; and
a plurality of scan lines and a plurality of data lines disposed on the substrate, wherein the plurality of scan lines extend along a first direction, the plurality of data lines extend along a second direction, and the first direction is not parallel to the second direction,
wherein the third conductive layer comprises a plurality of second conductive patterns extending along the second direction, the fourth conductive layer comprises a plurality of third conductive patterns extending along the first direction, and the plurality of second conductive patterns intersect the plurality of third conductive patterns to form a grid pattern.
17 . The electronic device according to claim 16 , wherein in a normal direction of the electronic device, each of the second conductive patterns is overlapped with a respective one of the data lines, and each of the third conductive patterns is overlapped with a respective one of the scan lines.
18 . The electronic device according to claim 16 , wherein the third conductive layer comprises a metal material, and the fourth conductive layer comprises a transparent conductive material.