Lithography system and methods
A method includes: protecting a mask of a mask assembly by a frame thereon during translating the mask assembly to a position associated with a region of a substrate, the frame having height less than a focal plane associated with a selected particle size; directing extreme ultraviolet (EUV) radiation toward the mask; reflecting radiation carrying a pattern of the mask toward the mask layer; forming a feature of a semiconductor device in a layer underlying the mask layer according to the pattern.
1 . A method, comprising:
depositing a mask layer over a substrate;
protecting a mask of a mask assembly by a pellicle-less frame thereon during translating the mask assembly to a position associated with a region of the substrate, wherein the pellicle-less frame is free of a pellicle membrane spanning the frame;
directing first radiation from a first reflector of a lithography system toward the mask, the first radiation passing from the first reflector to the mask to be directly incident on the mask;
directing second radiation reflected from the mask toward a second reflector of the lithography system, the second radiation passing from the mask to the second reflector to be directly incident on the second reflector;
reflecting radiation carrying a pattern of the mask toward the mask layer, the radiation being based on the second radiation;
forming a first opening in the mask layer by removing a pattern region of the mask layer based on the pattern;
forming a second opening by removing material of a layer underlying the mask layer exposed by the first opening; and
forming a feature of a semiconductor device in the second opening.
2 . The method of claim 1 , wherein the protecting the mask includes deflecting a particle by the frame.
3 . The method of claim 1 , wherein the protecting the mask includes adhering a particle by the frame.
4 . The method of claim 3 , wherein the adhering includes adhering by an adhesive layer disposed on the frame.
5 . The method of claim 3 , wherein the adhering includes establishing an electrical charge on the frame, the electrical charge being opposite that of the particle.
6 . The method of claim 3 , wherein the adhering includes trapping the particle in a porous surface of the frame.
7 . The method of claim 1 , wherein the protecting the mask includes deflecting a particle by a gas flow associated with movement of the frame.
8 . A method, comprising:
protecting a mask of a mask assembly by a pellicle-less frame thereon during translating the mask assembly to a position associated with a region of the substrate, the frame having height less than a focal plane associated with a selected particle size, and the frame being free of a pellicle membrane spanning the frame;
directing extreme ultraviolet (EUV) radiation toward the mask;
reflecting radiation carrying a pattern of the mask toward a mask layer;
forming a feature of a semiconductor device in a layer underlying the mask layer according to the pattern.
9 . The method of claim 8 , wherein the protecting the mask by the frame is by the frame having height less than about 1.5 millimeters.
10 . The method of claim 8 , wherein the protecting the mask by the frame is by the frame having tapered inner sidewalls.
11 . The method of claim 10 , wherein the tapered inner sidewalls have staircase profile.
12 . The method of claim 10 , wherein the protecting the mask by the frame is by the frame further having tapered outer sidewalls.
13 . The method of claim 10 , wherein the protecting the mask by the frame is by the frame having an adhesive layer disposed thereon.
14 . The method of claim 10 , wherein the protecting the mask by the frame is by the frame having an electrical charge thereon.
15 . A method, comprising:
positioning a mask assembly at a first position associated with a first region of a mask layer overlying a substrate;
exposing the first region by first extreme ultraviolet (EUV) light carrying a pattern of the mask assembly;
protecting mask patterns of a mask of the mask assembly while translating the mask assembly from the first position to a second position associated with a second region of the mask layer, the protecting being by a pellicle-less frame attached to the mask, the pellicle-less frame being formed of a conductive material and being free of a pellicle membrane spanning the frame; and
exposing the second region by second EUV light carrying the pattern.
16 . The method of claim 15 , wherein the protecting is by the pellicle-less frame deflecting a particle.
17 . The method of claim 16 , wherein the protecting is by the frame having height less than about 1 millimeter.
18 . The method of claim 17 , wherein the protecting is by the frame having tapered inner sidewalls.
19 . The method of claim 18 , wherein the protecting is by the frame having an adhesive layer thereon.
20 . The method of claim 19 , wherein the protecting is by the frame having an electrical charge thereon.