Optical proximity correction method, mask manufacturing method, semiconductor chip manufacturing method using the same and computing device

1 . An optical proximity correction (OPC) method for manufacturing a semiconductor chip, the OPC method comprising:

detecting edges of an initial layout pattern and determining an edge violating a mask rule, among the edges, as a target edge,

wherein the determining the edge violating the mask rule as the target edge comprises:

checking whether an adjacent layout pattern is within a defined distance from a corner of the initial layout pattern, and

determining an edge having a distance from an edge of the adjacent layout pattern that is smaller than a distance defined in the mask rule, among the edges, as the target edge;

setting a reference control point on the target edge;

based on determining that the target edge violates the mask rule, forming a multi-edge by dividing the target edge at the reference control point;

setting additional control points on the multi-edge;

forming a modified layout pattern by transforming the multi-edge into a curved edge based on the reference control point and the additional control points;

performing an OPC simulation based on the modified layout pattern;

calculating an edge placement error (EPE) of the modified layout pattern based on a result of the OPC simulation;

iteratively performing moving the reference control point on the target edge and the forming the multi-edge by dividing the target edge at the moved reference control point, the setting additional control points, the forming a modified layout pattern, the performing an OPC simulation, and the calculating an EPE, for a set number of iterations; and

determining a final layout pattern based on EPE calculation results.

2 . The OPC method of claim 1 , wherein the setting a reference control point on the target edge comprises setting a center of the target edge as the reference control point.

3 . The OPC method of claim 1 , wherein the dividing the target edge comprises:

dividing the target edge into first and second edges,

adding a rectangle in contact with the first edge to the initial layout pattern, and

cutting a rectangle in contact with the second edge from the initial layout pattern to form the multi-edge.

4 . The OPC method of claim 3 , wherein the dividing the target edge comprises determining an edge of the initial layout pattern that is closer to the adjacent layout pattern, among the first and second edges, as the second edge.

5 . The OPC method of claim 1 , wherein the forming a modified layout pattern comprises generating a Bezier curve or a B-spline curve based on the reference control point and the additional control points to transform the multi-edge into the curved edge.

6 . The OPC method of claim 1 , wherein the calculating an EPE of the modified layout pattern comprises comparing a size of a target pattern to be formed by the modified layout pattern with a size of a contour formed based on the result of the OPC simulation.

7 . The OPC method of claim 1 , wherein the modified layout pattern has a shape in which a portion relatively close to the adjacent layout pattern is contracted, and a portion relatively distant from the adjacent layout pattern is expanded.